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Open AccessArticle

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, China
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Micromachines 2020, 11(10), 889; https://doi.org/10.3390/mi11100889
Received: 1 August 2020 / Revised: 16 September 2020 / Accepted: 21 September 2020 / Published: 24 September 2020
(This article belongs to the Special Issue Micro/Nanoscale Semiconductor Memory Devices)
In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. The resistive switching behaviors of the resulting Pt/Ag/LZO/Pt devices, with different Li-doping contents, were studied under direct current (DC) and pulse voltages. The experimental results showed that compared with the devices doped with Li-8% and -10%, the ZnO based RRAM device doped by 5% Li-doping presented stable bipolar resistive switching behaviors with DC voltage, including a low switching voltage (<1.0 V), a high endurance (>103 cycles), long retention time (>104 s), and a large resistive switching window. In addition, quick switching between a high-resistance state (HRS) and a low-resistance state (LRS) was achieved at a pulse voltage. To investigate the resistive switching mechanism of the device, a conduction model was installed based on Ag conducting filament transmission. The study of the resulting Pt/Ag/LZO/Pt devices makes it possible to further improve the performance of RRAM devices. View Full-Text
Keywords: resistive random access memory; Li-doping ZnO thin films; resistive switching characteristics; magnetron sputtering resistive random access memory; Li-doping ZnO thin films; resistive switching characteristics; magnetron sputtering
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MDPI and ACS Style

Zhao, X.; Song, P.; Gai, H.; Li, Y.; Ai, C.; Wen, D. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory. Micromachines 2020, 11, 889. https://doi.org/10.3390/mi11100889

AMA Style

Zhao X, Song P, Gai H, Li Y, Ai C, Wen D. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory. Micromachines. 2020; 11(10):889. https://doi.org/10.3390/mi11100889

Chicago/Turabian Style

Zhao, Xiaofeng; Song, Ping; Gai, Huiling; Li, Yi; Ai, Chunpeng; Wen, Dianzhong. 2020. "Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory" Micromachines 11, no. 10: 889. https://doi.org/10.3390/mi11100889

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