Multilevel Switching Characteristics of Si 3 N 4 -Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application

: In this research, nano-wedge resistive switching random-access memory (ReRAM) based on a Si 3 N 4 switching layer and silicon bottom electrode was fabricated, and its multilevel switching characteristics were investigated. The wedge bottom electrode was formed by a tetramethyl ammonium hydroxide (TMAH) wet-etching process. The nano-wedge ReRAM was demonstrated to have di ﬀ erent reset current levels by varying the compliance currents. To explain the e ﬀ ect of modulating the compliance currents, the switching characteristics of both the SET and RESET behaviors were shown. After measuring the device under four di ﬀ erent compliance currents, it was proved to have di ﬀ erent current levels due to an inhibited resistive state after a SET switching process. Furthermore, SPICE circuit simulation was carried out to show the e ﬀ ect of line resistance on current summation for the array sizes of 8 × 8 and 16 × 16. These results indicate the importance of minimizing the line resistance for successful implementation as a hardware-based neural network.


Introduction
In the last decades, a rapid change has been detected in digital systems based on CMOS technology and nonvolatile memory devices [1]. Among the most notable, NAND flash memories are the most widely used memory devices in existing von Neumann computing architecture. Yet, their storage capability is encountering limitations due to increasing amounts of data and scaling issues. As a result, next-generation memories are widely sought. Magnetic random-access memory (MRAM), ferroelectric random-access memory (FRAM), and resistive switching random-access memory (ReRAM) have received much attention as replacements for the current non-volatile memory devices [2]. Yet, the reliability of these "emerging" next-generation memories is not promising enough for their commercialization in the market [3]. Among these "emerging" memories, ReRAM is regarded as a highly promising candidate due to its simple structure and fabrication process [4][5][6][7][8][9][10]. On the other hand, ReRAM as a synaptic device is also receiving tremendous attention for hardware-implemented neural network processing due to the limitations of existing von Neumann computing architecture [11].
The essential requirements for neural networks include multilevel conductance states and minimized line resistance of the cross-point array [12]. In this paper, nano-wedge resistive random-access memory was fabricated, and its multilevel switching characteristics were investigated to prove the wedge ReRAM s multibit storage capability. The compliance current, which usually aims to inhibit current overshoot within the memory device, was modulated from 100 µA to 600 µA to control the current flow into the ReRAM. Traps within the SiNx switching layer form a conductive filament, through which the current will flow when the memory device s state is transformed to a low-resistance state (LRS). The RESET switching characteristics were explored to examine the effect of the compliance currents on the device. SmartSpice circuit simulation was carried out to show the effect of line resistance on the current summation on array sizes of 8 × 8 and 16 × 16.

Materials and Methods
A schematic of a cross section of the nano-wedge ReRAM is illustrated in Figure 1a. Figure 1b is a SEM image of the fabricated nano-wedge ReRAM. A pattern of width 500 nm was lithographed using a photo process, followed by dry-etching of the pattern to form the fin structure. The wedge structure was formed by an anisotropic wet-etching process using tetramethyl ammonium hydroxide (TMAH) solution. Since the silicon is direction-dependent when it is dipped into the TMAH solution with etch rates in the <100> and <110> directions that are 37 times and 68 times faster, respectively, with respect to <111>, the pointed structure could be formed. The detailed anisotropic wet-etching process is shown in Figure 2. In order to activate the bottom electrode (BE), high doping implantation (BF 2 + , energy = 40 keV, dose = 5 × 10 15 cm −2 ) was carried out at the Si bottom electrode. The bottom electrode was isolated using a TEOS (Tetra-Ethyl-Ortho-Silicate) layer to expose a tip of the wedge. Exposure of the tip was done through a CMP and dHF wet-etching process. The 5 nm Si 3 N 4 switching layer was deposited on top of the bottom electrode by low-pressure chemical vapor deposition (LPCVD). A top electrode was formed using an Endura sputter system through depositing Ti with a thickness of 100 nm. Contact holes were formed to deposit pad metals. The length of the fabricated nano-wedge ReRAM device was 500 nm, while the width (of the nano-wedge) was 5 nm and the depth (of the switching layer, Si 3 N 4 ) was 5 nm.
Electronics 2020, 9, x FOR PEER REVIEW 2 of 8 multilevel conductance states and minimized line resistance of the cross-point array [12]. In this paper, nano-wedge resistive random-access memory was fabricated, and its multilevel switching characteristics were investigated to prove the wedge ReRAM′s multibit storage capability. The compliance current, which usually aims to inhibit current overshoot within the memory device, was modulated from 100 μA to 600 μA to control the current flow into the ReRAM. Traps within the SiNx switching layer form a conductive filament, through which the current will flow when the memory device′s state is transformed to a low-resistance state (LRS). The RESET switching characteristics were explored to examine the effect of the compliance currents on the device. SmartSpice circuit simulation was carried out to show the effect of line resistance on the current summation on array sizes of 8 × 8 and 16 × 16.

Materials and Methods
A schematic of a cross section of the nano-wedge ReRAM is illustrated in Figure 1a. Figure 1b is a SEM image of the fabricated nano-wedge ReRAM. A pattern of width 500 nm was lithographed using a photo process, followed by dry-etching of the pattern to form the fin structure. The wedge structure was formed by an anisotropic wet-etching process using tetramethyl ammonium hydroxide (TMAH) solution. Since the silicon is direction-dependent when it is dipped into the TMAH solution with etch rates in the <100> and <110> directions that are 37 times and 68 times faster, respectively, with respect to <111>, the pointed structure could be formed. The detailed anisotropic wet-etching process is shown in Figure 2. In order to activate the bottom electrode (BE), high doping implantation (BF2 + , energy = 40 keV, dose = 5 × 10 15 cm −2 ) was carried out at the Si bottom electrode. The bottom electrode was isolated using a TEOS (Tetra-Ethyl-Ortho-Silicate) layer to expose a tip of the wedge. Exposure of the tip was done through a CMP and dHF wet-etching process. The 5 nm Si3N4 switching layer was deposited on top of the bottom electrode by low-pressure chemical vapor deposition (LPCVD). A top electrode was formed using an Endura sputter system through depositing Ti with a thickness of 100 nm. Contact holes were formed to deposit pad metals. The length of the fabricated nano-wedge ReRAM device was 500 nm, while the width (of the nano-wedge) was 5 nm and the depth (of the switching layer, Si3N4) was 5 nm.

Results and Discussion
All electrical characteristics were obtained in DC mode to examine the multilevel switching characteristics of the fabricated wedge ReRAM. The compliance currents used were 100 μA/200 μA/400 μA/600 μA. The bipolar DC characteristics of the memory device with four different compliance currents are shown in Figure 3. At the initial state, voltage was applied to form the conductive filament within the switching layer of the device. At 4.5 V, SET switching occurred as the current level abruptly increased to the limit of the compliance current (Icc) at 100 μA. The actual current may flow more than the compliance current, but it inhibits the maximum current level flowing through the wedge ReRAM. Correspondingly, the RESET voltage was applied to rupture the filament to transform it to a highresistance state (HRS), which was proved by abrupt dropping of the current level at −2.6 V and −3.3 V with Icc values of 100 μA and 600 μA, respectively.
In Figure 4a, an R-V curve of the RESET process is shown. It is noted that the resistances and currents during the RESET process are shown as absolute values. As the negative voltage increased, there were moments of abrupt resistance change under the four different Icc. It can be seen that the levels of LRS increased as the compliance currents decreased. This indicates that less current flows through the nano-wedge ReRAM as the level of Icc decreases, leading to suppressed LRS. This results in effective control of OFF currents (after transition to the HRS), as seen from Figure 4b. The current

Results and Discussion
All electrical characteristics were obtained in DC mode to examine the multilevel switching characteristics of the fabricated wedge ReRAM. The compliance currents used were 100 µA/200 µA/400 µA/600 µA. The bipolar DC characteristics of the memory device with four different compliance currents are shown in Figure 3.  At the initial state, voltage was applied to form the conductive filament within the switching layer of the device. At 4.5 V, SET switching occurred as the current level abruptly increased to the limit of the compliance current (I cc ) at 100 µA. The actual current may flow more than the compliance current, but it inhibits the maximum current level flowing through the wedge ReRAM. Correspondingly, the RESET voltage was applied to rupture the filament to transform it to a high-resistance state (HRS), which was proved by abrupt dropping of the current level at −2.6 V and −3.3 V with I cc values of 100 µA and 600 µA, respectively.

Figures need to update of electronics-874326
In Figure 4a, an R-V curve of the RESET process is shown. It is noted that the resistances and currents during the RESET process are shown as absolute values. As the negative voltage increased, there were moments of abrupt resistance change under the four different I cc . It can be seen that the levels of LRS increased as the compliance currents decreased. This indicates that less current flows through the nano-wedge ReRAM as the level of I cc decreases, leading to suppressed LRS. This results    Voltage (V) I cc @200 μA I cc @400 μA I cc @600 μA  The reset switching process in ReRAM is known to be associated with Joule heating [13,14]. The flow of current causes a reduction of oxygen vacancies within the switching layer, resulting in rupture of the conductive filament [15]. In order to investigate the effect of the compliance current on reset switching characteristics, the distribution of reset voltages and currents for 50 nano-wedge ReRAM cells was characterized as shown in Figure 5. As can be seen from Figure 5a, the average reset voltages tend to increase as the compliance current increases. This implies a thicker conductive filament where the number of electrons flowing also rises. As a result, higher voltages are required to rupture the number of defects that contribute to current flows. As the radius of the conductive filament becomes wider, the reset current that functions to dismantle the filament also increases, as demonstrated in Figure 5b.  Next, the effect of line resistance and array size on current summation was analyzed using SPICE simulation. The purpose of this simulation is important for applications in hardware-implemented neural network processing that require a minimized error rate to maximize the recognition accuracy [16]. In this simulation, array sizes of 8 × 8 and 16 × 16 were used. Table 1 lists the parameters used in the SPICE simulation. R Inter-node, BE and R TE represent the resistance of the bottom and top electrodes. Since the resistance of the silicon bottom electrode may vary depending on the size of the cross-point array, unit resistance defined as the inter-node resistance was used as described in Figure 6. The resistance R TE was 42 Ω, which is the commonly known resistance of titanium [17]. In order to measure the current of ReRAM cells, the load resistance was added at the end of the bit line with resistance 100 Ω. Low and high resistances were set as 300 kΩ and 3 MΩ, respectively. The cross-point array structure was simulated based on the connection of resistors as shown in Figure 7. After switching the initial state of ReRAM cells into the low-resistive states, as depicted in red color in Figure 7, a read voltage of 0.2 V was applied to read a single cell. The remaining bit/word lines were grounded while reading every single cell in a bit line, preventing the flow of reverse leakage current through nearby array cells. Equation (1)

Parameter Value
Inter-node resistance of bottom electrode (R Inter-node, BE 1 )
Electronics 2020, 9, x FOR PEER REVIEW 5 of 8 (a) (b) Figure 5. Effect of compliance current on (a) reset voltages and (b) reset current when reset switching occurs.

Figure 6.
Inter-node resistance of the bottom electrode (RInter-node, BE) used in the SPICE simulation. This is the unit resistance that could be changed as the array size increases. Inter-node resistance of the bottom electrode (R Inter-node, BE ) used in the SPICE simulation. This is the unit resistance that could be changed as the array size increases.
Equation (1). Definition of current loss: difference between the summation of individual ReRAM cell and simultaneous reads.
After reading every ReRAM cell in the array, an I-V curve reading up to 0.2 V was plotted in Figure 8. The range of the read current from the 8 × 8 array in Figure 8a      For an in-depth analysis of the effect of bit line (BL) resistance on the read current of individual array cells, a simulation was carried out to demonstrate the loss of cell current, as depicted in Figure 9. In Figure 9a, the simulated current value ranges from 3.91 µA to 3.99 µA for bit line resistance ranging from 10 Ω to 1 kΩ. However, the current drops to 2.89 µA as the resistance rises to 10 kΩ. At bit line (BL) resistance of 240 kΩ, the simulated current of the ReRAM array cell is only 689 nA, which is approximately an 82.7% loss compared to the current of BL resistance within the range of 10 Ω-1 kΩ. These results indicate that the effect of BL resistance on the current flow of ReRAM array cells is significant, especially when the resistance increases. Current loss becomes more critical as the array size expands from 2 × 2 to 64 × 64, as illustrated in Figure 9b. For the array size of 2 × 2, the current loss is only 0.43%, while the loss rises to 74.61% as the array size increases to 64 × 64. This aggravation effect is mainly attributed to the larger array having greater resistance in its bit lines, where larger voltage drops occur. Through circuit simulation, it is essential to reduce the line resistance in both bit and word lines to accurately measure the array cell current, which is critical to determining the accuracy of neural networks [18].

Conclusions
In this paper, we investigated the switching properties of a Si 3 N 4 -based nano-wedge ReRAM device and simulation results for large-sized cross-point arrays. The formation of the wedge structure using TMAH anisotropic wet-etching solution and the effect of variation of the compliance current on the current level were demonstrated. Furthermore, SPICE simulation was carried out to determine the effect of line resistance and array size on the current loss, which is a critical parameter to maximize the accuracy of in-memory computing of neural networks. This research showed that the requirement of a successful neural network depends on minimizing the effect of line resistance, even when the array size increases.