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Nanomaterials
Volume 13
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10.3390/nano13152179
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Article

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices

by
Kai-Huang Chen
1,
Chien-Min Cheng
2,*,
Na-Fu Wang
1 and
Ming-Cheng Kao
3
1
Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung 83347, Taiwan
2
Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 710301, Taiwan
3
Department of Information and Communication Engineering, Chaoyang University of Technology, Taichung 413310, Taiwan
*
Author to whom correspondence should be addressed.
Nanomaterials 2023, 13(15), 2179; https://doi.org/10.3390/nano13152179
Submission received: 25 June 2023 / Revised: 19 July 2023 / Accepted: 24 July 2023 / Published: 26 July 2023
(This article belongs to the Special Issue Nano-Structured Thin Films: Growth, Characteristics, and Application)
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Abstract

Activation energy, bipolar resistance switching behavior, and the electrical conduction transport properties of ITOX:SiO2 thin film resistive random access memory (RRAM) devices were observed and discussed. The ITOX:SiO2 thin films were prepared using a co-sputtering deposition method on the TiN/Si substrate. For the RRAM device structure fabrication, an Al/ITOX:SiO2/TiN/Si structure was prepared by using aluminum for the top electrode and a TiN material for the bottom electrode. In addition, grain growth, defect reduction, and RRAM device performance of the ITOX:SiO2 thin film for the various oxygen gas flow conditions were observed and described. Based on the I-V curve measurements of the RRAM devices, the turn on-off ratio and the bipolar resistance switching properties of the Al/ITOX:SiO2/TiN/Si RRAM devices in the set and reset states were also obtained. At low operating voltages and high resistance values, the conductance mechanism exhibits hopping conduction mechanisms for set states. Moreover, at high operating voltages, the conductance mechanism behaves as an ohmic conduction current mechanism. Finally, the Al/ITOX:SiO2/TiN/Si RRAM devices demonstrated memory window properties, bipolar resistance switching behavior, and nonvolatile characteristics for next-generation nonvolatile memory applications.
Keywords: activation energy; bipolar resistance switching; resistive random access memory; electrical conduction mechanisms; ITOX:SiO2 activation energy; bipolar resistance switching; resistive random access memory; electrical conduction mechanisms; ITOX:SiO2

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MDPI and ACS Style

Chen, K.-H.; Cheng, C.-M.; Wang, N.-F.; Kao, M.-C. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices. Nanomaterials 2023, 13, 2179. https://doi.org/10.3390/nano13152179

AMA Style

Chen K-H, Cheng C-M, Wang N-F, Kao M-C. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices. Nanomaterials. 2023; 13(15):2179. https://doi.org/10.3390/nano13152179

Chicago/Turabian Style

Chen, Kai-Huang, Chien-Min Cheng, Na-Fu Wang, and Ming-Cheng Kao. 2023. "Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices" Nanomaterials 13, no. 15: 2179. https://doi.org/10.3390/nano13152179

APA Style

Chen, K.-H., Cheng, C.-M., Wang, N.-F., & Kao, M.-C. (2023). Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices. Nanomaterials, 13(15), 2179. https://doi.org/10.3390/nano13152179

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