75 Results Found

Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as long as...

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures,...

Reactive ion etching (RIE) with fluorocarbon plasma is a facile method to tracelessly remove the subsurface damage layer of fused silica but has the drawback of unsatisfactory improvement in laser damage resistance due to the induction of secondary d...

In order to analyze the effects of various sizes of pyramid structure on solar cell characteristics, a pyramid structure was formed on the wafer through various etching processes. In this paper, etching was performed using one-step etching processes...

An integrated functional anti-reflective surface is of great significance for optical and optoelectronic devices. Hence, its preparation has attracted great attention from many researchers. This study combined wet alkaline etching approaches and reac...

In this manuscript, we outline a reliable procedure to manufacture photonic nanostructures from single-crystal diamond (SCD). Photonic nanostructures, in our case SCD nanopillars on thin (<1 μ m) platforms, are highly relevant for nanoscale s...

The side wall profile roughness of the silicon waveguide prepared by electron beam lithography and reactive ion etching is extracted by using the boundary tracing method. The maximum, minimum, and average roughness values are extracted from the side...

Nanoimprint lithography (NIL) master fidelity is governed by coupled variations beginning with resist spin-coating, proceeding through electron beam exposure, and culminating in anisotropic etch transfer. We present an integrated, physics-based simul...

Inductively coupled plasma–reactive etching (ICP-RIE) of InGaZnO (IGZO) thin films was studied with variations in gas mixtures of hydrochloride (HCl) and argon (Ar). The dry etching characteristics of the IGZO films were investigated according...

The selectivity of the reactive ion etching of silicon using a negative electron resist AR-N 7520 mask was investigated. The selectivity dependencies on the fraction of SF6 in the feeding gas and bias voltage were obtained. To understand the kinetics...

Nanoporous structures have attracted great attention in electronics, sensor and storage devices, and photonics because of their large surface area, large volume to surface ratio, and potential for high-sensitivity sensor applications. Normally, elect...

Hexagonal boron-nitride nanoparticle coating was deposited on AISI 1045 steel surface. The deposition process included a transformation of B-containing thin organic film into nanocrystalline BN using two methods: thermal annealing at 450–850 &d...

Highly selective etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) has received considerable attention from the semiconductor community owing to its precise patterning and cost efficiency. We investigated the etching selectivity of Si3N4...

The precise monitoring of chemical reactions in plasma-based processes is crucial for advanced semiconductor manufacturing. This study integrates three diagnostic techniques—Optical Emission Spectroscopy (OES), Quadrupole Mass Spectrometry (QMS...

This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology part...

Reactive ion etching (RIE) is the dominating technology for micromachining semiconductors with a high aspect ratio (HAR) [...]

The reactive ion etching (RIE) process of fused silica is often accompanied by surface contamination, which seriously degrades the ultraviolet laser damage performance of the optics. In this study, we find that the contamination behavior on the fused...

Silicon micropillars have been suggested as one of the techniques for improving the efficiency of devices. Fabrication of micropillars has been done in several ways—Metal Assisted Chemical Etching (MACE) and Reactive Ion Etching (RIE) being the...

This contribution explores different strategies to electrically contact vertical pillars with diameters less than 100 nm. Two process strategies have been defined, the first based on Atomic Force Microscope (AFM) indentation and the second based on p...

The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching an...

Many laser material processing applications require an optimized beam profile, e.g., ring shape or Top-Hat profiles with homogeneous intensity distribution. In this study, we show a beam shaping concept leading to a phase shifting element with binary...

The fabrication of semiconductor devices with three-dimensional architectures imposes unprecedented demands on advanced plasma dry etching processes. These include the simultaneous requirements of high throughput, high material selectivity, and preci...

Nanoscale textured surfaces play an important role in creating antibacterial surfaces, broadband anti-reflective properties, and super-hydrophobicity in many technological systems. Creating nanoscale oxide textures on polymer substrates for applicati...

After the plasma etching of quartz crystal, the crystal lattice underwent changes in response to the length of plasma etching time. The lattice arrangement of quartz crystal was the most orderly after plasma etching for 1000 nm, and with the increase...

Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant pola...

This paper presents processes for glass micromachining, including sandblast, wet etching, reactive ion etching (RIE), and glass reflow techniques. The advantages as well as disadvantages of each method are presented and discussed in light of the expe...

Reactive ion etching (RIE) is a promising material removal method for processing membrane diffractive optical elements and fabrication of meter-scale aperture optical substrates because of its high-efficiency parallel processing and low surface damag...

A high porosity micropore arrayed parylene membrane is a promising device that is used to capture circulating and exfoliated tumor cells (CTCs and ETCs) for liquid biopsy applications. However, its fabrication still requires either expensive equipmen...

In this report, we present a process for the fabrication and tapering of a silicon (Si) nanopillar (NP) array on a large Si surface area wafer (2-inch diameter) to provide enhanced light harvesting for Si solar cell application. From our N,N-dimethyl...

The main challenges in 3D metrology involve measuring TSVs etched with very high aspect ratios, where the via depth to diameter ratio approaches 10:1–20:1. In this paper, we introduce an innovative approach to enhance our in-house spectroscopic...

The high-efficiency preparation of large-area microstructures of optical materials and precision graphic etching technology is one of the most important application directions in the atomic and near-atomic-scale manufacturing industry. Traditional fo...

Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a...

KY(WO4)2 is a promising material for on-chip laser sources. Deep etching of small KY(WO4)2 samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices. There are, however, several difficultie...

Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {202¯1} GaN substrate, termed an ELO wing LD. Two types of facet feasibility studies were conducted: (1) &ldq...

The light extraction efficiency of an LED is dependent on its surface texture. However, the surface of the p-GaN layer is not easy to be etch with inverted hexagonal pyramid structures (IHPS) with small top widths and large depths using existing meth...

By using a methane and hydrogen process gas mixture in an appropriate hot-filament CVD process without further dopant, high electrical conductivity of over 100 S/cm has been achieved in nanocrystalline diamond films deposited on silicon single-crysta...

Soft lithography allows for the simple and low-cost fabrication of nanopatterns with different shapes and sizes over large areas. However, the resolution and the aspect ratio of the nanostructures fabricated by soft lithography are limited by the dep...

Phase-change memory (PCM) is a promising candidate for in-memory computation and neuromorphic computing due to its high endurance, low cycle-to-cycle variability, and low read noise. However, among other factors, its performance strongly depends on t...

The lack of long-term stability of polymeric neural interfaces remains one of the most important and less tackled issues in this research field. To address this issue, we fabricated two test structures based on interdigitated electrodes (IDEs) encaps...

In this paper, multifunctional, multilevel phase plates of quartz substrate were efficiently prepared by using a newly developed polygon scanner-based femtosecond laser photolithography system combined with inductively coupled discharge plasma reacti...

Micromachined devices were developed and fabricated using complementary metal-oxide-semiconductor (CMOS)/micro-electro-mechanical systems (MEMS) technology allowing for the analysis of transport properties of silicon sub-micron beams having monolithi...

A high Q-factor (quality-factor) spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process was investigated. The spiral inductor is manufactured on a silicon substrate. A post-process is used to remov...

Porous silicon (PS) can be used as a loading template in sensing or as a matrix to develop nanoparticle arrays. We present a comprehensive study of PS morphology and optical properties before and after the pore opening process, including the determin...

Although electroosmotic flow (EOF) has been applied to drive fluid flow in microfluidic chips, some of the phenomena associated with it can adversely affect the performance of certain applications such as electrophoresis and ion preconcentration. To...

For chronic applications of flexible neural implants, e.g., intracortical probes, the flexible substrate material has to encapsulate the electrical conductors with a long-term stability against the saline environment of the neural tissue. The biocomp...

Metallic nanomesh, one of the emerging transparent conductive film (TCF) materials with both high electrical conductivity and optical transmittance, shows great potential to replace indium tin oxide (ITO) in optoelectronic devices. However, lithograp...

In this study, we conducted an optimization of a low-damage selective etching process utilizing inductively coupled plasma-reactive ion etch (ICP-RIE) with a fluorine-based gas mixture. This optimization was carried out for the fabrication of p-GaN g...

In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate perf...

We investigated the low-temperature direct bonding of SiC/Si via O2 plasma activation. After optimization, a high bonding efficiency of over 90% was obtained. Surface activation was achieved via reactive ion etching (RIE) O2 plasma for 30 s without s...

We present a process flow for wafer-scale fabrication of a surface phase grating with sub-micron feature sizes from a single semiconductor material. We demonstrate this technique using a 110-oriented GaP semiconductor wafer with second-order nonlinea...