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Open AccessArticle

Exploring Strategies to Contact 3D Nano-Pillars

1
Institute of Microelectronics of Barcelona (IMB-CNM), CSIC, 08193 Barcelona, Spain
2
CEA-Leti, Département des Plateformes Technologiques, University Grenoble Alpes, 38000 Grenoble, France
*
Author to whom correspondence should be addressed.
Nanomaterials 2020, 10(4), 716; https://doi.org/10.3390/nano10040716
Received: 27 January 2020 / Revised: 19 March 2020 / Accepted: 20 March 2020 / Published: 10 April 2020
(This article belongs to the Special Issue Nanomaterials for the Advanced Manufacturing of Electronic Devices)
This contribution explores different strategies to electrically contact vertical pillars with diameters less than 100 nm. Two process strategies have been defined, the first based on Atomic Force Microscope (AFM) indentation and the second based on planarization and reactive ion etching (RIE). We have demonstrated that both proposals provide suitable contacts. The results help to conclude that the most feasible strategy to be implementable is the one using planarization and reactive ion etching since it is more suitable for parallel and/or high-volume manufacturing processing. View Full-Text
Keywords: vertical pillars; AFM; HSQ; nano-indentation vertical pillars; AFM; HSQ; nano-indentation
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MDPI and ACS Style

Amat, E.; del Moral, A.; Fernández-Regúlez, M.; Evangelio, L.; Lorenzoni, M.; Gharbi, A.; Rademaker, G.; Pourteau, M.-L.; Tiron, R.; Bausells, J.; Perez-Murano, F. Exploring Strategies to Contact 3D Nano-Pillars. Nanomaterials 2020, 10, 716.

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