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Sensors 2011, 11(10), 9798-9806;

Manufacture and Characterization of High Q-Factor Inductors Based on CMOS-MEMS Techniques

Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402, Taiwan
Author to whom correspondence should be addressed.
Received: 22 August 2011 / Revised: 12 October 2011 / Accepted: 17 October 2011 / Published: 19 October 2011
(This article belongs to the Special Issue Modeling, Testing and Reliability Issues in MEMS Engineering 2011)
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A high Q-factor (quality-factor) spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process was investigated. The spiral inductor is manufactured on a silicon substrate. A post-process is used to remove the underlying silicon substrate in order to reduce the substrate loss and to enhance the Q-factor of the inductor. The post-process adopts RIE (reactive ion etching) to etch the sacrificial oxide layer, and then TMAH (tetramethylammonium hydroxide) is employed to remove the silicon substrate for obtaining the suspended spiral inductor. The advantage of this post-processing method is its compatibility with the CMOS process. The performance of the spiral inductor is measured by an Agilent 8510C network analyzer and a Cascade probe station. Experimental results show that the Q-factor and inductance of the spiral inductor are 15 at 15 GHz and 1.8 nH at 1 GHz, respectively. View Full-Text
Keywords: micro inductors; MEMS; high Q-factor micro inductors; MEMS; high Q-factor
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Yang, M.-Z.; Dai, C.-L.; Hong, J.-Y. Manufacture and Characterization of High Q-Factor Inductors Based on CMOS-MEMS Techniques. Sensors 2011, 11, 9798-9806.

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