Next Article in Journal
Multi-Timescale Control of Variable-Speed Wind Turbine for Inertia Provision
Previous Article in Journal
Elastodontic Therapy of Hyperdivergent Class II Patients Using AMCOP® Devices: A Retrospective Study
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Applied Sciences
Volume 12
Issue 7
10.3390/app12073261
applsci-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

Low-Temperature Direct Bonding of SiC to Si via Plasma Activation

by
Fengxuan Wang
1,2,
Xiang Yang
2,
Yongqiang Zhao
2,3,
Jingmin Wu
2,3,
Zhiyu Guo
2,3,
Zhi He
4,*,
Zhongchao Fan
1,2,* and
Fuhua Yang
3
1
School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
2
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
3
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
4
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
*
Authors to whom correspondence should be addressed.
Appl. Sci. 2022, 12(7), 3261; https://doi.org/10.3390/app12073261
Submission received: 18 February 2022 / Revised: 11 March 2022 / Accepted: 22 March 2022 / Published: 23 March 2022
(This article belongs to the Section Applied Physics General)
Browse Figures
Versions Notes

Abstract

We investigated the low-temperature direct bonding of SiC/Si via O2 plasma activation. After optimization, a high bonding efficiency of over 90% was obtained. Surface activation was achieved via reactive ion etching (RIE) O2 plasma for 30 s without significant bombardment damage. A smooth and void-free interface was observed by transmission electron microscopy (TEM), while a significant amorphous oxide layer was also detected. By increasing the annealing temperature from 150 to 300 ∘C, the amorphous layer decreased drastically from 48 nm to 11 nm. Based on systematic experiments and analysis, the mechanism of SiC/Si low-temperature plasma-activated bonding was discussed.
Keywords: direct bonding; plasma activation; silicon carbide; bonding interface direct bonding; plasma activation; silicon carbide; bonding interface

Share and Cite

MDPI and ACS Style

Wang, F.; Yang, X.; Zhao, Y.; Wu, J.; Guo, Z.; He, Z.; Fan, Z.; Yang, F. Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. Appl. Sci. 2022, 12, 3261. https://doi.org/10.3390/app12073261

AMA Style

Wang F, Yang X, Zhao Y, Wu J, Guo Z, He Z, Fan Z, Yang F. Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. Applied Sciences. 2022; 12(7):3261. https://doi.org/10.3390/app12073261

Chicago/Turabian Style

Wang, Fengxuan, Xiang Yang, Yongqiang Zhao, Jingmin Wu, Zhiyu Guo, Zhi He, Zhongchao Fan, and Fuhua Yang. 2022. "Low-Temperature Direct Bonding of SiC to Si via Plasma Activation" Applied Sciences 12, no. 7: 3261. https://doi.org/10.3390/app12073261

APA Style

Wang, F., Yang, X., Zhao, Y., Wu, J., Guo, Z., He, Z., Fan, Z., & Yang, F. (2022). Low-Temperature Direct Bonding of SiC to Si via Plasma Activation. Applied Sciences, 12(7), 3261. https://doi.org/10.3390/app12073261

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop