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Ultraviolet Laser Damage Dependence on Contamination Concentration in Fused Silica Optics during Reactive Ion Etching Process

1
Research Centre of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
2
Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
3
IFSA Collaborative Innovation Center, Shanghai Jiao Tong University, Shanghai 200240, China
*
Authors to whom correspondence should be addressed.
Materials 2018, 11(4), 577; https://doi.org/10.3390/ma11040577
Received: 16 March 2018 / Revised: 4 April 2018 / Accepted: 5 April 2018 / Published: 10 April 2018
The reactive ion etching (RIE) process of fused silica is often accompanied by surface contamination, which seriously degrades the ultraviolet laser damage performance of the optics. In this study, we find that the contamination behavior on the fused silica surface is very sensitive to the RIE process which can be significantly optimized by changing the plasma generating conditions such as discharge mode, etchant gas and electrode material. Additionally, an optimized RIE process is proposed to thoroughly remove polishing-introduced contamination and efficiently prevent the introduction of other contamination during the etching process. The research demonstrates the feasibility of improving the damage performance of fused silica optics by using the RIE technique. View Full-Text
Keywords: fused silica; contamination; reactive ion etching; laser damage; optical performance fused silica; contamination; reactive ion etching; laser damage; optical performance
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MDPI and ACS Style

Sun, L.; Shao, T.; Shi, Z.; Huang, J.; Ye, X.; Jiang, X.; Wu, W.; Yang, L.; Zheng, W. Ultraviolet Laser Damage Dependence on Contamination Concentration in Fused Silica Optics during Reactive Ion Etching Process. Materials 2018, 11, 577.

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