Plasma

The aim of this work is to provide an extensive experimental study of the performance of a novel magnetically and gas-flow-stabilized arc discharge for carbon dioxide (CO₂) conversion and oxygen (O₂) production on Mars. The proposed discharge provides an additional degree of freedom for easy scalability by adjusting its length. The discharge is examined at a pressure range of 200–612 mbar in order to optimize it for oxygen production on Mars, where low-pressure operation is preferable due to energy costs. Additionally, two quenching configurations with an actively cooled region are evaluated. They are compared to a benchmark configuration without additional cooling. Two high-voltage power supplies (PSs) are used, and the results are compared—a constant direct current (DC) and a pulsed unipolar current. The pulsed power supply offers better CO₂ conversion performance at lower pressure due to stable operation in an arc regime. The energy cost for oxygen production on Mars is also presented, including a conservative estimation of the energy needed for compressing the Martian atmosphere at ambient pressure to the discharge operational pressure. It is discussed how this affects the energy cost of oxygen production.

This study investigates the axial electron density distribution in two plasma antenna configurations excited by a surface wave microwave discharge and its influence on the radiation pattern of antennas. The axial plasma electron density profiles were characterized using two non-invasive diagnostic techniques: the resonant cavity measurements in the TM₁₁₀ mode and the waveguide transmission analysis. A linear decrease in the plasma electron density along the antenna was observed. The effective electrical length of the plasma antennas, accounting for this density distribution, is found to be approximately half the physical plasma column length. Numerical simulations employing COMSOL Multiphysics based on the Drude model revealed that a realistic nonuniform axial plasma electron density distribution markedly modifies the antenna radiation characteristics. For the wave-type plasma monopole antenna, this results in a shift in the emission maximum, a reduction in the main lobe amplitude, a nearly twofold broadening of the main lobe, and the disappearance of the side lobe. For the quarter-wave-type plasma asymmetric dipole antenna, there is a reduction in the main lobe amplitude without a shift in the maximum and a broadening of the main lobe due to an increase in the side-lobe level and its merging with the main lobe.

The fabrication of semiconductor devices with three-dimensional architectures imposes unprecedented demands on advanced plasma dry etching processes. These include the simultaneous requirements of high throughput, high material selectivity, and precise profile control. In conventional reactive ion etching (RIE), fluorocarbon plasma provides both accelerated ion species and reactive neutrals that etch the feature front, while the CF_x radicals promote polymerization that protects sidewalls and enhance selectivity to the amorphous carbon layer (ACL) mask. In this work, we present computational results on the role of CF₄ addition to hydrogen fluoride (HF) plasma for next-generation RIE, specifically cryogenic etching. Simulations were performed by varying the CF₄ concentration in the HF plasma to evaluate its influence on ion densities, neutral species concentration, and electron density. The results show that the densities of CF_x (x = 1–3) ions and radicals increase significantly with CF₄ addition (up to 20%), while the overall plasma density and the excited HF species remain nearly unchanged. The results of plasma density and atomic fluorine density are consistent with the experimental observations of the HF/CF₄ plasma using an absorption probe and the actimetry method. It was verified that the gas-phase reaction model proposed in this study can accurately reproduce the plasma characteristics of the HF/CF₄ system. The coupling of HF-based etchants with CF_x radicals enables polymerization that preserves SiO₂ etching throughput while significantly enhancing etch selectivity against the ACL mask from 1.86 to 5.07, with only a small fraction (~10%) of fluorocarbon gas added. The plasma simulation provides new insights into enhancing the etching performance of HF-based cryogenic plasma etching by controlling the CF₂ radicals and HF reactants through the addition of fluorocarbon gases.