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Keywords = ferroelectricity engineering

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15 pages, 4990 KB  
Article
Multiscale Structural Modulation and Synergistic Enhancement of Transparency and Relaxor Behavior in La3+-Doped KNN Lead-Free Ceramics
by Xu Yang, Lingzhi Wang, Li Luo, Wenjuan Wu, Bo Wu, Junjie Li, Jie Li, Tixian Zeng and Gengpei Xia
Nanomaterials 2026, 16(2), 149; https://doi.org/10.3390/nano16020149 - 22 Jan 2026
Viewed by 274
Abstract
Lead-free transparent ferroelectric ceramics with integrated opto-electro-mechanical functionalities are pivotal for next-generation multifunctional devices. In this study, K0.48Na0.52NbO3-xLa2O3 (KNN-xLa, x = 0.005 − 0.04) ceramics were fabricated via a conventional [...] Read more.
Lead-free transparent ferroelectric ceramics with integrated opto-electro-mechanical functionalities are pivotal for next-generation multifunctional devices. In this study, K0.48Na0.52NbO3-xLa2O3 (KNN-xLa, x = 0.005 − 0.04) ceramics were fabricated via a conventional solid-state route to investigate the La3+-induced multiscale structural evolution and its modulation of optical and electrical properties. La3+ substitution drives a critical structural transition from an anisotropic orthorhombic phase (Amm2) to a high-symmetry pseudocubic-like tetragonal phase (P4mm) for x ≥ 0.025, characterized by minimal lattice distortion (c/a = 1.0052). This enhanced structural isotropy, coupled with submicron grain refinement (<1 μm) driven by VA-mediated solute drag, effectively suppresses light scattering. Consequently, a high-transparency plateau (T780 ≈ 53–58%, T1700 ≈ 70–72%) is achieved for 0.025 ≤ x ≤ 0.035. Simultaneously, the system undergoes a crossover from normal ferroelectric (FE) to relaxor (RF) state, governed by an FE–RF boundary at x = 0.015. While x = 0.005 exhibits robust piezoelectricity (d33 ≈ 92 pC/N), the x = 0.015 composition facilitates a transitional polar state with large strain (0.179%) and high polarization (Pm ≈ 33.3 μC/cm2, Pr ≈ 15.8 μC/cm2). Piezoresponse force microscopy (PFM) confirms the domain evolution from lamellar macro-domains to speckle-like polar nanoregions (PNRs), elucidating the intrinsic trade-off between optical transparency and piezoelectricity. This work underscores La3+ as a potent structural modifier for tailoring phase boundaries and defect chemistry, providing a cost-effective framework for developing high-performance transparent electromechanical materials. Full article
(This article belongs to the Special Issue Nanostructured Materials for Electric Applications)
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13 pages, 2463 KB  
Article
Phase Transitions and Switching Dynamics of Topological Domains in Hafnium Oxide-Based Cylindrical Ferroelectrics from Three-Dimensional Phase Field Simulation
by Pengying Chang, Hanxiao Zhang, Mengyao Xie, Huan Zhang and Yiyang Xie
Nanomaterials 2025, 15(24), 1901; https://doi.org/10.3390/nano15241901 - 18 Dec 2025
Viewed by 513
Abstract
The phase transitions and switching dynamics of topological polar textures in hafnium oxide (HfO2)-based cylindrical-shell ferroelectrics are studied using a three-dimensional (3D) phase field model based on the self-consistent solution of the time-dependent Ginzburg–Landau model and Poisson equation. The comprehensive interplays [...] Read more.
The phase transitions and switching dynamics of topological polar textures in hafnium oxide (HfO2)-based cylindrical-shell ferroelectrics are studied using a three-dimensional (3D) phase field model based on the self-consistent solution of the time-dependent Ginzburg–Landau model and Poisson equation. The comprehensive interplays of bulk free energy, gradient energy, depolarization energy, and elastic energy are taken into account. When a cylindrical ferroelectric device is biased under the in-plane radial electric field, there is a size-controlled phase transition between the ferroelectric (FE), antiferroelectric (AFE), and paraelectric (PE) phases, depending on ferroelectric film thickness and cylindrical shell radius. For in-plane polarization textures at the equilibriums, the FE phase has a Néel-like texture with a center-type four-quad domain, the AFE phase has a monodomain texture, and the PE phase has a Bloch-like texture with a vortex four-quad domain. These polarization domain textures are resultant from energy competition and topologically protected by the geometrical confinement. The polarization dynamics from polar states towards equilibriums are analyzed considering the separated contributions of x- and y-components of polarizations that are driven by x-y in-plane electric fields. The emergent topological domains and phase transitions provide guidelines for geometrical engineering of a novel nano-structured ferroelectric device that is different from the planar one, offering new possibilities for multi-functional high-density ferroelectric memory. Full article
(This article belongs to the Special Issue HfO2-Based Ferroelectric Thin Films and Devices)
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18 pages, 5671 KB  
Article
Investigation of Electron Transport Layer Influence on Asymmetric Bipolar Switching in Transparent BST-Based RRAM Devices
by Kai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, Yao-Chin Wang, Chien-Min Cheng and Wei-Min Xu
Micromachines 2025, 16(11), 1302; https://doi.org/10.3390/mi16111302 - 20 Nov 2025
Cited by 1 | Viewed by 521
Abstract
Ba0.6Sr0.4TiO3 (BST) thin films were deposited on ITO substrates via rf magnetron sputtering, followed by structural and morphological characterization using XRD and FE-SEM. Metal–insulator–metal (MIM) RRAM devices were fabricated by depositing Al top electrodes, and their electrical properties [...] Read more.
Ba0.6Sr0.4TiO3 (BST) thin films were deposited on ITO substrates via rf magnetron sputtering, followed by structural and morphological characterization using XRD and FE-SEM. Metal–insulator–metal (MIM) RRAM devices were fabricated by depositing Al top electrodes, and their electrical properties were examined through I–V measurements. The optimized BST films deposited at 40% oxygen concentration exhibited stable resistive switching, with an operating voltage of 3 V, an on/off ratio of 1, and a leakage current of 10−8 A. After rapid thermal annealing at 500 °C, the on/off ratio improved to 2 but leakage increased to 10−3 A. Incorporating an electron transport layer (ETL) effectively suppressed the leakage current to 10−5 A while maintaining the on/off ratio at 2. Moreover, a transition from bipolar to unipolar switching was observed at higher oxygen concentration (60%). These results highlight the role of ETLs in reducing leakage and stabilizing switching characteristics, providing guidance for the development of transparent, low-power, and high-reliability BST-based RRAM devices. This study aims to investigate the role of Ba0.6Sr0.4TiO3 (BST) ferroelectric oxide as a functional switching layer in resistive random-access memory (RRAM) and to evaluate how interface engineering using an electron transport layer (ETL) can improve resistive switching stability, leakage suppression, and device reliability. Full article
(This article belongs to the Section D1: Semiconductor Devices)
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13 pages, 8905 KB  
Article
Giant Modulation of Microstructure and Ferroelectric/Piezoelectric Responses in Pb(Zr,Ti)O3 Ultrathin Films via Single-Pulse Femtosecond Laser
by Bin Wang, Mingchen Du, Hu Wang, Mengmeng Wang and Dawei Li
Nanomaterials 2025, 15(18), 1450; https://doi.org/10.3390/nano15181450 - 20 Sep 2025
Viewed by 3806
Abstract
Ferroelectric oxides, such as Pb(Zr,Ti)O3 (PZT), have been shown to maintain stable ferroelectricity even in ultrathin film configurations. However, achieving controllable modulation of microstructure and physical responses in these ultrathin films remains challenging, limiting their potential applications in modern nanoelectronics and optoelectronics. [...] Read more.
Ferroelectric oxides, such as Pb(Zr,Ti)O3 (PZT), have been shown to maintain stable ferroelectricity even in ultrathin film configurations. However, achieving controllable modulation of microstructure and physical responses in these ultrathin films remains challenging, limiting their potential applications in modern nanoelectronics and optoelectronics. Here, we propose a single-pulse femtosecond (fs) laser micromachining technique for high-precision engineering of microstructure and ferroelectric/piezoelectric responses in ultrathin PZT films. The results show that various microstructures can be selectively fabricated through precise control of fs laser fluence. Specifically, nano-concave arrays are formed via low-fluence laser irradiation, which is mainly attributed to the fs laser peening effect. In contrast, nano-volcano (nano-cave) structures are generated when the laser fluence is close to or reaches the ablation threshold. Additionally, applying an fs laser pulse with fluence exceeding a critical threshold enables the formation of nano-cave structures with controlled depth and width in PZT/Pt/SiO2 multilayers. Piezoresponse force microscopy measurements demonstrate that the laser peening process significantly enhances the piezoelectric response while exerting minimal influence on the coercive field of PZT thin films. This improvement is attributed to the enhanced electromechanical energy transfer and concentrated compressive stresses distribution in PZT thin films resulting from the laser peening effect. Our study not only offers an effective strategy for microstructure and property engineering in ferroelectric materials at the nanoscale but also provides new insights into the underlying mechanism of ultrafast laser processing in ferroelectric thin films. Full article
(This article belongs to the Special Issue Nonlinear Optics in Low-Dimensional Nanomaterials (Second Edition))
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30 pages, 2167 KB  
Review
BaTiO3 Nanocarriers: Advancing Targeted Therapies with Smart Drug Release
by Milica Ćurčić, Branka Hadžić, Martina Gilić, Zorica Lazarević and Andjelija Ilić
Pharmaceutics 2025, 17(9), 1203; https://doi.org/10.3390/pharmaceutics17091203 - 16 Sep 2025
Cited by 2 | Viewed by 1995
Abstract
Background/Objectives: Barium titanate (BaTiO3)-based nanocarriers have emerged as versatile and promising platforms for targeted drug delivery, owing to their unique combination of biocompatibility, piezoelectric and ferroelectric properties, as well as responsiveness to external stimuli. These multifunctional ceramic nanoparticles can be [...] Read more.
Background/Objectives: Barium titanate (BaTiO3)-based nanocarriers have emerged as versatile and promising platforms for targeted drug delivery, owing to their unique combination of biocompatibility, piezoelectric and ferroelectric properties, as well as responsiveness to external stimuli. These multifunctional ceramic nanoparticles can be precisely engineered to enable spatiotemporally controlled release of therapeutic agents, triggered by physical stimuli such as ultrasound, light, magnetic fields, temperature changes, and pH variations. Such an approach enhances treatment efficacy while reducing systemic side effects. Methods: This review provides a comprehensive overview of the latest advancements in the development and biomedical application of BaTiO3-based nanocarriers. Special emphasis is placed on modern synthesis strategies, surface functionalization methods, and the integration of BaTiO3 with other functional nanomaterials to create hybrid systems with improved therapeutic performance. Key challenges in clinical translation are also discussed, including biocompatibility assessment, biodistribution, and regulatory requirements. Conclusions: BaTiO3-based nanocarriers show promise as materials well suited for advanced biomedical applications. The paper concludes with an outline of future research directions aimed at optimizing these advanced nanosystems for precision and personalized medicine, with applications in oncology, anti-infective therapy, and regenerative medicine. Full article
(This article belongs to the Special Issue Drug Delivery for Natural Extract Applications)
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35 pages, 8508 KB  
Review
Recent Advances in Dielectric and Ferroelectric Behavior of Ceramic Nanocomposites: Structure Property Relationships and Processing Strategies
by Nouf Ahmed Althumairi, Mokhtar Hjiri, Abdullah M. Aldukhayel, Anouar Jbeli and Kais Iben Nassar
Nanomaterials 2025, 15(17), 1329; https://doi.org/10.3390/nano15171329 - 29 Aug 2025
Cited by 19 | Viewed by 3592
Abstract
In the race toward next-generation electronics and energy systems, ceramic nanocomposites have taken center stage due to their remarkable dielectric and ferroelectric functionalities. By pushing the boundaries of nanoscale engineering, recent studies have shown how microstructural control and interfacial design can unlock unprecedented [...] Read more.
In the race toward next-generation electronics and energy systems, ceramic nanocomposites have taken center stage due to their remarkable dielectric and ferroelectric functionalities. By pushing the boundaries of nanoscale engineering, recent studies have shown how microstructural control and interfacial design can unlock unprecedented levels of polarization, permittivity, and frequency stability. This review presents a critical and up-to-date synthesis of the last decade’s progress in ceramic-based nanocomposites, with a special focus on the structure property processing nexus. Diverse processing techniques ranging from conventional sintering to advanced spark plasma sintering and scalable wet-chemical methods are analyzed for their influence on phase purity, grain boundary behavior, and interfacial polarization. The review also explores breakthroughs in lead-free and eco-friendly systems, flexible ferroelectric nanocomposites, and high-k dielectrics suitable for miniaturized devices. By identifying both the scientific opportunities and persistent challenges in this rapidly evolving field, this work aims to guide future innovations in material design, device integration, and sustainable performance. Full article
(This article belongs to the Special Issue Dielectric and Ferroelectric Properties of Ceramic Nanocomposites)
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17 pages, 2652 KB  
Article
First-Principles and Device-Level Investigation of β-AgGaO2 Ferroelectric Semiconductors for Photovoltaic Applications
by Wen-Jie Hu, Xin-Yu Zhang, Xiao-Tong Zhu, Yan-Li Hu, Hua-Kai Xu, Xiang-Fu Xu, You-Da Che, Xing-Yuan Chen, Li-Ting Niu and Bing Dai
Photonics 2025, 12(8), 803; https://doi.org/10.3390/photonics12080803 - 11 Aug 2025
Viewed by 1484
Abstract
Ferroelectric semiconductors, with their inherent spontaneous polarization, present a promising approach for efficient charge separation, making them attractive for photovoltaic applications. The potential of β-AgGaO2, a polar ternary oxide with an orthorhombic Pna21 structure, as a light-absorbing material is evaluated. [...] Read more.
Ferroelectric semiconductors, with their inherent spontaneous polarization, present a promising approach for efficient charge separation, making them attractive for photovoltaic applications. The potential of β-AgGaO2, a polar ternary oxide with an orthorhombic Pna21 structure, as a light-absorbing material is evaluated. First-principles computational analysis reveals that β-AgGaO2 possesses an indirect bandgap of 2.1 eV and exhibits pronounced absorption within the visible spectral range. Optical simulations suggest that a 300 nm thick absorber layer could theoretically achieve a power conversion efficiency (PCE) of 20%. Device-level simulations using SCAPS-1D evaluate the influence of hole and electron transport layers on solar cell performance. Among the tested hole transport materials, Cu2FeSnS4 (CFTS) achieves the highest PCE of 14%, attributed to its optimized valence band alignment and reduced recombination losses. In contrast, no significant improvements were observed with the electron transport layers tested. These findings indicate the potential of β-AgGaO2 as a ferroelectric photovoltaic absorber and emphasize the importance of band alignment and interface engineering for optimizing device performance. Full article
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42 pages, 6922 KB  
Review
A Brief Review of Atomistic Studies on BaTiO3 as a Photocatalyst for Solar Water Splitting
by Aisulu U. Abuova, Ulzhan Zh. Tolegen, Talgat M. Inerbaev, Mirat Karibayev, Balzhan M. Satanova, Fatima U. Abuova and Anatoli I. Popov
Ceramics 2025, 8(3), 100; https://doi.org/10.3390/ceramics8030100 - 4 Aug 2025
Cited by 8 | Viewed by 4662
Abstract
Barium titanate (BaTiO3) has long been recognized as a promising photocatalyst for solar-driven water splitting due to its unique ferroelectric, piezoelectric, and electronic properties. This review provides a comprehensive analysis of atomistic simulation studies of BaTiO3, highlighting the role [...] Read more.
Barium titanate (BaTiO3) has long been recognized as a promising photocatalyst for solar-driven water splitting due to its unique ferroelectric, piezoelectric, and electronic properties. This review provides a comprehensive analysis of atomistic simulation studies of BaTiO3, highlighting the role of density functional theory (DFT), ab initio molecular dynamics (MD), and classical all-atom MD in exploring its photocatalytic behavior, in line with various experimental findings. DFT studies have offered valuable insights into the electronic structure, density of state, optical properties, bandgap engineering, and other features of BaTiO3, while MD simulations have enabled dynamic understanding of water-splitting mechanisms at finite temperatures. Experimental studies demonstrate photocatalytic water decomposition and certain modifications, often accompanied by schematic diagrams illustrating the principles. This review discusses the impact of doping, surface modifications, and defect engineering on enhancing charge separation and reaction kinetics. Key findings from recent computational works are summarized, offering a deeper understanding of BaTiO3’s photocatalytic activity. This study underscores the significance of advanced multiscale simulation techniques for optimizing BaTiO3 for solar water splitting and provides perspectives on future research in developing high-performance photocatalytic materials. Full article
(This article belongs to the Special Issue Advances in Ceramics, 3rd Edition)
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16 pages, 2891 KB  
Article
Hysteresis Loops Design for Nanoporous Ferroelectrics
by Xuan Huang, Fengjuan Yang, Lifei Du, Jiong Wang, Yongfeng Liang and Pingping Wu
Materials 2025, 18(15), 3606; https://doi.org/10.3390/ma18153606 - 31 Jul 2025
Cited by 1 | Viewed by 1033
Abstract
The design and adjustable properties of nanoporous materials are important for current and future technological applications, research, and development. In addition, nanoporous ferroelectric materials have the potential to achieve competitive ferroelectric, dielectric, and piezoelectric characteristics. In this work, using the phase-field model, we [...] Read more.
The design and adjustable properties of nanoporous materials are important for current and future technological applications, research, and development. In addition, nanoporous ferroelectric materials have the potential to achieve competitive ferroelectric, dielectric, and piezoelectric characteristics. In this work, using the phase-field model, we found that the shape of pores in barium titanite ceramics governs the formation of the ferroelectric domain structure and the switching hysteresis loop. A remanent polarization-coercive field (Pr-Ec) diagram is introduced to denote the shape of the hysteresis loops. We performed a fundamental study in understanding how the domain structures affect the properties of domain-engineered porous ferroelectrics. Simulation results show that the hysteresis loop of porous ferroelectrics can be designed by controlling the shape/orientation of the ellipse-shaped pores. Numerical simulations also verify that the dielectric/piezoelectric properties can be improved with artificially designed porous structures. These phase-field results may be useful in the development of highly performing lead-free ferroelectric/piezoelectric materials. Full article
(This article belongs to the Special Issue Advances in Piezoelectric/Dielectric Ceramics and Composites)
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29 pages, 14906 KB  
Article
Hydrothermal Engineering of Ferroelectric PZT Thin Films Tailoring Electrical and Ferroelectric Properties via TiO2 and SrTiO3 Interlayers for Advanced MEMS
by Chun-Lin Li and Guo-Hua Feng
Micromachines 2025, 16(8), 879; https://doi.org/10.3390/mi16080879 - 29 Jul 2025
Cited by 3 | Viewed by 1883
Abstract
This work presents an innovative hydrothermal approach for fabricating flexible piezoelectric PZT thin films on 20 μm titanium foil substrates using TiO2 and SrTiO3 (STO) interlayers. Three heterostructures (Ti/PZT, Ti/TiO2/PZT, and Ti/TiO2/STO/PZT) were synthesized to enable low-temperature [...] Read more.
This work presents an innovative hydrothermal approach for fabricating flexible piezoelectric PZT thin films on 20 μm titanium foil substrates using TiO2 and SrTiO3 (STO) interlayers. Three heterostructures (Ti/PZT, Ti/TiO2/PZT, and Ti/TiO2/STO/PZT) were synthesized to enable low-temperature growth and improve ferroelectric performance for advanced flexible MEMS. Characterizations including XRD, PFM, and P–E loop analysis evaluated crystallinity, piezoelectric coefficient d33, and polarization behavior. The results demonstrate that the multilayered Ti/TiO2/STO/PZT structure significantly enhances performance. XRD confirmed the STO buffer layer effectively reduces lattice mismatch with PZT to ~0.76%, promoting stable morphotropic phase boundary (MPB) composition formation. This optimized film exhibited superior piezoelectric and ferroelectric properties, with a high d33 of 113.42 pm/V, representing an ~8.65% increase over unbuffered Ti/PZT samples, and displayed more uniform domain behavior in PFM imaging. Impedance spectroscopy showed the lowest minimum impedance of 8.96 Ω at 10.19 MHz, indicating strong electromechanical coupling. Furthermore, I–V measurements demonstrated significantly suppressed leakage currents in the STO-buffered samples, with current levels ranging from 10−12 A to 10−9 A over ±3 V. This structure also showed excellent fatigue endurance through one million electrical cycles, confirming its mechanical and electrical stability. These findings highlight the potential of this hydrothermally engineered flexible heterostructure for high-performance actuators and sensors in advanced MEMS applications. Full article
(This article belongs to the Special Issue Manufacturing and Application of Advanced Thin-Film-Based Device)
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16 pages, 2734 KB  
Article
Achieving a High Energy Storage Performance in Grain Engineered (Ba,Sr)(Zr,Ti)O3 Ferroelectric Films Integrated on Si
by Fuyu Lv, Chao Liu, Hongbo Cheng and Jun Ouyang
Nanomaterials 2025, 15(12), 920; https://doi.org/10.3390/nano15120920 - 13 Jun 2025
Cited by 1 | Viewed by 1033
Abstract
BaTiO3-based lead-free ferroelectric films with a large recoverable energy density (Wrec) and a high energy efficiency (η) are crucial components for next-generation dielectric capacitors, which are used in energy conditioning and storage applications in integrated circuits. [...] Read more.
BaTiO3-based lead-free ferroelectric films with a large recoverable energy density (Wrec) and a high energy efficiency (η) are crucial components for next-generation dielectric capacitors, which are used in energy conditioning and storage applications in integrated circuits. In this study, grain-engineered (Ba0.95,Sr0.05)(Zr0.2,Ti0.8)O3 (BSZT) ferroelectric thick films (~500 nm) were prepared on Si substrates. These films were deposited at 350 °C, 100 °C lower than the temperature at which the LaNiO3 buffer layer was deposited on Pt/Ti. This method reduced the (001) grain population due to a weakened interface growth mode, while promoting volume growth modes that produced (110) and (111) grains with a high polarizability. As a result, these films exhibited a maximum polarization of ~88.0 μC/cm2, a large Wrec of ~203.7 J/cm3, and a high energy efficiency η of 81.2% (@ 6.4 MV/cm). The small-field dielectric constant nearly tripled as compared with that of the same BSZT/LaNiO3 heterostructure deposited at the same temperature (350 °C or 450 °C). The enhanced linear dielectric response, delayed ferroelectric polarization saturation, and increased dielectric strength due to the nano-grain size, collectively contributed to the improved energy storage performance. This work provides a novel approach for fabricating high-performance dielectric capacitors for energy storage applications. Full article
(This article belongs to the Section Nanoelectronics, Nanosensors and Devices)
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20 pages, 2425 KB  
Review
A Review of Electroactive Polymers in Sensing and Actuator Applications
by Diana Narvaez and Brittany Newell
Actuators 2025, 14(6), 258; https://doi.org/10.3390/act14060258 - 23 May 2025
Cited by 13 | Viewed by 10401
Abstract
Electroactive polymers (EAPs) represent a versatile class of smart materials capable of converting electrical stimuli into mechanical motion and vice versa, positioning them as key components in the next generation of actuators and sensors. This review summarizes recent developments in both electronic and [...] Read more.
Electroactive polymers (EAPs) represent a versatile class of smart materials capable of converting electrical stimuli into mechanical motion and vice versa, positioning them as key components in the next generation of actuators and sensors. This review summarizes recent developments in both electronic and ionic EAPs, highlighting their activation mechanisms, material architectures, and multifunctional capabilities. Representative systems include dielectric elastomers, ferroelectric and conducting polymers, liquid crystal elastomers, and ionic gels. Advances in fabrication methods, such as additive manufacturing, nanocomposite engineering, and patternable electrode deposition, are discussed with emphasis on miniaturization, stretchability, and integration into soft systems. Applications span biomedical devices, wearable electronics, soft robotics, and environmental monitoring, with growing interest in platforms that combine actuation and sensing within a single structure. Finally, the review addresses critical challenges such as long-term material stability and scalability, and outlines future directions toward self-powered, AI-integrated, and sustainable EAP technologies. Full article
(This article belongs to the Special Issue Electroactive Polymer (EAP) for Actuators and Sensors Applications)
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25 pages, 3962 KB  
Review
Tailoring the Functional Properties of Ferroelectric Perovskite Thin Films: Mechanisms of Dielectric and Photoelectrochemical Enhancement
by Ioan-Mihail Ghitiu, George Alexandru Nemnes and Nicu Doinel Scarisoreanu
Crystals 2025, 15(6), 496; https://doi.org/10.3390/cryst15060496 - 23 May 2025
Cited by 1 | Viewed by 2071
Abstract
Various types of strain, as well as chemical pressure induced by dopants, can effectively tailor the performance of perovskite thin films, including their optical, electrical or photoelectrochemical properties. The control of these functional properties through such engineering techniques is key to fulfilling the [...] Read more.
Various types of strain, as well as chemical pressure induced by dopants, can effectively tailor the performance of perovskite thin films, including their optical, electrical or photoelectrochemical properties. The control of these functional properties through such engineering techniques is key to fulfilling the application-specific requirements of ferroelectric devices in various fields. Numerous models and experimental data have been published on this subject, especially on ferrite-based ferroelectric materials. Within this paper, the mechanisms of tuning ferroelectric intrinsic properties, such as polarization and ferroelectric domain configurations, through epitaxial strain and doping, as well as the role of these techniques in influencing functional properties such as dielectric and photoelectrochemical ones, are presented. This review examines the significant improvements in dielectric properties and photoelectrochemical efficiency achieved by the strategical control of key functionalities including dielectric losses, domain structures, charge separation and surface reactions in strained/doped ferroelectric thin films, highlighting the advancements and research progress made in this field in recent years. Full article
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15 pages, 4952 KB  
Article
Optimized Breakdown Strength and Crystal Structure for Boosting the Energy Storage Performance of Niobate-Based Glass Ceramics via a B-Site Substitution Strategy
by Kexin Gao, Fei Shang, Yaoyi Qin and Guohua Chen
Crystals 2025, 15(5), 444; https://doi.org/10.3390/cryst15050444 - 8 May 2025
Cited by 1 | Viewed by 1059
Abstract
Based on the B-site modification strategy, excellent energy storage properties were achieved in this work by substituting Nb with Ta of the same valence in niobate-based glass ceramics. Ta substitution was found to lead to the transformation of crystal structures, and the space [...] Read more.
Based on the B-site modification strategy, excellent energy storage properties were achieved in this work by substituting Nb with Ta of the same valence in niobate-based glass ceramics. Ta substitution was found to lead to the transformation of crystal structures, and the space point group evolved from the non-centrosymmetric P4bm to the centrosymmetric P4/mbm, resulting in a transition from relaxor ferroelectric to paraelectric glass ceramics. Furthermore, the addition of Ta led to a significant decrease in grain size and interfacial activation energy, as well as an increase in the optical band gap, resulting in a dramatic increase in BDS from 800 kV/cm to 1300 kV/cm. The KBSN-4.0mol%Ta2O5 glass ceramic exhibited optimal energy storage properties, including a discharge energy density of ~5.62 J/cm3 and a superfast discharge rate of ~9.7 ns, resulting in an ultrahigh discharge power density of about ~1296.9 MW/cm3 at 1300 kV/cm. Furthermore, this KBSN-Ta glass ceramic also displayed good thermal stability over a temperature range of 20–120 °C, with the Wd decreasing by 9.0% at 600 kV/cm. B-site modification engineering in glass ceramics has proved to be an important way to effectively optimize energy storage performance. Full article
(This article belongs to the Special Issue Advances in Glass-Ceramics)
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11 pages, 3536 KB  
Article
Nonvolatile Applications and Reliability Investigation of La-Doped ZrO2 Antiferroelectric Capacitors
by Jianguo Li, Junliang Zhou, Wenchao Yan, Zibo Dong, Yuetong Huo, ChoongHyun Lee, Zeping Weng and Yi Zhao
Electronics 2025, 14(9), 1794; https://doi.org/10.3390/electronics14091794 - 28 Apr 2025
Viewed by 1181
Abstract
The nonvolatile application of La-doped ZrO2 (ZLO) antiferroelectric capacitors is demonstrated in this study, accompanied by systematic investigation of device reliability. A built-in electric field was successfully established through engineered work function modulation. The fabricated nonvolatile (NV) ZLO capacitor exhibits not only [...] Read more.
The nonvolatile application of La-doped ZrO2 (ZLO) antiferroelectric capacitors is demonstrated in this study, accompanied by systematic investigation of device reliability. A built-in electric field was successfully established through engineered work function modulation. The fabricated nonvolatile (NV) ZLO capacitor exhibits not only avoidance of wake-up and fatigue phenomena typically observed in ferroelectric systems but also demonstration of ultralow coercive voltage (2Vc = 1.2 V) and exceptional endurance exceeding 1012 cycles. The inherent unique polarization reversal mechanism in NV ZLO device was identified as the origin of a unidirectional imprint effect. Accelerated testing at 85 °C for 104 s yielded conclusive evidence of retention characteristic stability. This investigation provides a novel perspective for the engineering utilization of antiferroelectric materials and facilitates their potential incorporation into advanced integrated circuit architectures. Full article
(This article belongs to the Section Semiconductor Devices)
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