Colloidal cubic silicon-carbide nanocrystals have been fabricated, characterized, and introduced into metal–insulator–semiconductor and metal–insulator–metal structures based on hafnium oxide layers. The fabricated structures were characterized throu...
In this paper, the efficiency benefits of adopting Silicon–Carbide devices for electric vehicle applications are studied. A hybrid time and frequency domain-based simulation tool is developed for the Silicon–Carbide (SiC) traction inverte...
While silicon has been a steadfast semiconductor material for the past 50 years, it is now facing competition from other materials, especially for detector design. In that respect, due to its high resistance to radiation damage, silicon carbide is on...
In this work, silicon carbide layers containing silicon vacancies are grown by the Method of Coordinated Substitution of Atoms (MCSA). The main idea of this fundamentally new method is that silicon vacancies are first created in silicon, which is muc...
Silicon carbide fibers have superior flexural properties and chemical stability compared to glass fibers. We investigated the flexural strength and modulus of an experimental, short silicon carbide fiber-reinforced resin. Short silicon carbide fibers...
To achieve lower switching losses and higher frequency capabilities in converter design, researchers worldwide have been investigating Silicon carbide (SiC) modules and MOSFETs. In power electronics, wide bandgap devices such as Silicon carbide are e...
Silicon carbide and silicon nitride materials were intensively studied in the end of the past century, yet some aspects of its physical chemistry require investigation. The strength characteristics of Si3N4-SiC refractories are moderate; however, the...
Modifying material properties within a specific spatial region is a pivotal stage in the fabrication of microelectronic devices. Laser annealing emerges as a compelling technology, offering precise control over the crystalline structure of semiconduc...
Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the int...
This research investigates the dynamic mechanical properties of silicon carbide-modified concrete using a ∅ 100 mm large-diameter split Hopkinson pressure bar (SHPB). The effects of silicon carbide content, particle size, and strain rate on dyn...
Development of the organomorphic ceramic-matrix composites (CMCs), where the reinforcing preform is built using polymer fibers subject essentially to hot pressing, was motivated by a desire to obtain much higher structural uniformity as well as to re...
Silicon carbide (SiC) is a very promising carbide material with various applications such as electrochemical supercapacitors, photocatalysis, microwave absorption, field-effect transistors, and sensors. Due to its enticing advantages of high thermal...
Micro gas turbines serve small-scale generation where swift response and low emissions are highly valued, and they are commonly fuelled by natural gas. True to their ‘micro’ designation, their size is indeed compact; however, a noteworthy...
Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with ph...
This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures at the interface of graphene oxide/silicon wafer (GO/Si) under Ar atmosphere at 1000 °C....
Compared with the most commonly used silicon and germanium, which need to work at cryogenic or low temperatures to decrease their noise levels, wide-bandgap compound semiconductors such as silicon carbide allow the operation of radiation detectors at...
Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experi...
Around the world, silicon carbide (SiC) is used as a raw material in several engineering applications because of its various beneficial properties. Currently, though the Acheson method is one of the most emblematic to manufacture SiC, the direct carb...
As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gaple...
Silicon carbide (SiC) ceramics have gained significant attention in advanced engineering applications because of their superior mechanical properties, resistance to wear and corrosion, and thermal stability. However, the precision machining of these...
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention...
Nitride-bonded silicon carbide is an alternative to steels resistant to abrasive wear. This paper presents the results of a nitride-bonded silicon carbide (SiC) wear test in diverse soil conditions. The test was performed on a “spinning bowl” test st...
Silicon carbide composites are expected for light water reactors. The objective is to understand the steam oxidation behavior and the high-temperature water corrosion behavior of the liquid phase sintering silicon carbide and to develop the liquid ph...
Silicon carbide nanoparticles (SiC NPs) are promising inorganic molecular-sized fluorescent biomarkers. It is imperative to develop methods to functionalize SiC NPs for certain biological applications. One possible route is to form amino groups on th...
Silicon carbide is a material with a multistable crystallographic structure, i.e., a polytypic material. Different polytypes exhibit different band gaps and electronic properties with nearly identical basal plane lattice constants, making them intere...
In this study, 550 nm thick cubic silicon carbide square diaphragms were back etched from Si substrate. Then, indentation was carried out to samples with varying dimensions, indentation locations, and loads. The influence of three parameters is docum...
The effect of silicon on diffusion behavior of the carbide forming elements in Ni-Mo-Cr-Fe based corrosion-resistant alloy is studied by diffusion couple experiment. One group of diffusion couples are made of the alloy with a different silicon conten...
This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material. Ex...
In this study, the influence of silicon carbide on an aluminum alloy’s yield tensile strength, ultimate tensile strength, compressive strength, tensile toughness and impact toughness were investigated. Meanwhile, the aluminum alloy specimens we...
The mid-infrared (MIR) is an exciting spectral range that also hosts useful molecular vibrational fingerprints. There is a growing interest in nanophotonics operating in this spectral range, and recent advances in plasmonic research are aimed at enha...
Annular polishing technology is an important optical machining method for achieving a high-precision mirror surface on silicon carbide. However, the inevitable over-polishing of the specimen edge in annular polishing deteriorates achieved surface qua...
In this paper, silicon carbide fiber-reinforced silicon carbide (SiCf/SiC) composites were fabricated using binder jetting additive manufacturing followed by polymer infiltration and pyrolysis. Spherical SiC powders were produced using milling, spray...
The properties of high strength, wear resistance, and high brittleness, make silicon carbide (SiC) materials difficult to process by traditional processing methods. The non-traditional processing method of laser processing has emerged as a viable mea...
In micro gas turbines, electrical power from the high-speed generator is delivered to the grid through a converter that influences overall efficiency and energy quality. This subsystem is often overlooked in efforts to improve turbine performance, wh...
Reaction-bonded silicon carbide ceramics were sintered by infiltration of Si and B–Si alloy under an argon atmosphere at different temperatures. The element boron was added to the silicon melt to form a B–Si alloy first. The mechanical properties of...
The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit...
The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels...
Silicon carbide is changing power electronics; it is enabling massive car electrification owing to its far more efficient operation with respect to mainstream silicon in a large variety of energy conversion systems like the main traction inverter of...
Silicon carbide nanotubes (SiCNTs) have generated significant research interest due to their potential use in the fabrication of electronic and optoelectronic nanodevices and biosensors. The exceptional chemical, electrical and thermal properties of...
Silicon carbide is successfully implemented in semiconductor technology; it is also used in systems operating under aggressive environmental conditions, including high temperatures and radiation exposure. In the present work, molecular dynamics model...
Silicon carbide (SiC) is a great material for high-tech applications due to its unique mechanical, thermal and electrical properties. The Acheson method that is currently used for its production necessitates temperatures between 2000 and 2500 °C,...
Accelerated neutron tests on silicon (Si) and silicon carbide (SiC) power MOSFETs at different temperatures and drain bias voltages were performed at the ChipIr facility (Didcot, UK). A super-junction silicon MOSFET and planar SiC MOSFETs with differ...
This study demonstrates the successful fabrication of high-performance reaction-bonded silicon carbide (RBSC) ceramics through an optimized liquid silicon infiltration (LSI) process employing multi-modal SiC particle gradation and nano-carbon black (...
Silicon carbide (SiC) is a promising semiconductor material as well as a challenging material to machine, owing to its unique characteristics including high hardness, superior thermal conductivity, and chemical inertness. The ultrafast nature of femt...
Silicon carbide is an emerging material in the field of wide band gap semiconductor devices. Due to its high critical breakdown field and high thermal conductance, silicon carbide MOSFET devices are predestined for high-power applications. The concen...
As an example of the implementation of digital materials science approaches based on statistical processing of electron micrographs with the analysis of fractal parameters, the digital characteristics of microstructure of diamond–silicon carbid...
Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap...
The rapid development of chip technology has all put forward higher requirements for highly thermally conductive materials. In this work, a new type of material of Fishbone-like silicon carbide (SiC) material was used as the filler in a polyvinyliden...
In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC) honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterize...
Ultra-small nanoparticles with sizes comparable to those of pores in the cellular membrane possess significant potential for application in the field of biomedicine. Silicon carbide ultra-small nanoparticles with varying surface termination were test...
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