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Volume 14
Issue 17
10.3390/ma14174976
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Review

Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation

by
Alexander A. Lebedev
1,*,
Vitali V. Kozlovski
2,
Klavdia S. Davydovskaya
1 and
Mikhail E. Levinshtein
1
1
Solid State Electronic Department, Ioffe Institute, Politekhnicheskaya Street 26, 194021 St. Petersburg, Russia
2
Department of Experimental Physics, St. Petersburg State Polytechnic University, Polytekhnicheskaya 29, 195251 St. Petersburg, Russia
*
Author to whom correspondence should be addressed.
Materials 2021, 14(17), 4976; https://doi.org/10.3390/ma14174976
Submission received: 30 July 2021 / Revised: 24 August 2021 / Accepted: 26 August 2021 / Published: 31 August 2021
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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Abstract

The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the probability of the formation of these centers decreases, and they are partly annealed out. As a result, the carrier removal rate in SiC becomes ~6 orders of magnitude lower in the case of irradiation at 500 °C. Once again, this proves that silicon carbide is promising as a material for high-temperature electronics devices.
Keywords: silicon carbide; radiation hardness; proton and electron irradiation; charge removal rate; compensation; irradiation temperature silicon carbide; radiation hardness; proton and electron irradiation; charge removal rate; compensation; irradiation temperature

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MDPI and ACS Style

Lebedev, A.A.; Kozlovski, V.V.; Davydovskaya, K.S.; Levinshtein, M.E. Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation. Materials 2021, 14, 4976. https://doi.org/10.3390/ma14174976

AMA Style

Lebedev AA, Kozlovski VV, Davydovskaya KS, Levinshtein ME. Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation. Materials. 2021; 14(17):4976. https://doi.org/10.3390/ma14174976

Chicago/Turabian Style

Lebedev, Alexander A., Vitali V. Kozlovski, Klavdia S. Davydovskaya, and Mikhail E. Levinshtein. 2021. "Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation" Materials 14, no. 17: 4976. https://doi.org/10.3390/ma14174976

APA Style

Lebedev, A. A., Kozlovski, V. V., Davydovskaya, K. S., & Levinshtein, M. E. (2021). Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation. Materials, 14(17), 4976. https://doi.org/10.3390/ma14174976

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