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Open AccessArticle

Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing

1
Nanotechnology, Institute of Micro- and Nanoelectronics and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, P.O. Box 100565, 98684 Ilmenau, Germany
2
Fraunhofer IAF, Fraunhofer Institute for Applied Solid State Physics, Tullastraße 72, 79108 Freiburg, Germany
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(6), 523; https://doi.org/10.3390/cryst10060523
Received: 30 April 2020 / Revised: 10 June 2020 / Accepted: 15 June 2020 / Published: 18 June 2020
(This article belongs to the Special Issue Development and Investigation of SiC and SiC-based devices)
Silicon carbide is a material with a multistable crystallographic structure, i.e., a polytypic material. Different polytypes exhibit different band gaps and electronic properties with nearly identical basal plane lattice constants, making them interesting for heterostructures without concentration gradients. The controlled formation of this heterostructure is still a challenge. The ability to adjust a defined temperature–time profile using rapid thermal processing was used to imprint the polytype transitions by controlling the nucleation and structural evolution during the temperature ramp-up and the steady state. The influence of the linear heating-up rate velocity during ramp-up and steady-state temperature on the crystal structure of amorphized ion-implanted silicon carbide layers was studied and used to form heteropolytype structures. Integrating the structural selection properties of the non-isothermal annealing stage of the ion-implanted layers into an epitaxial growth process allows the imprinting of polytype patterns in epitaxial layers due to the structural replication of the polytype pattern during epitaxial growth. The developed methodology paves the way for structural selection and vertical and lateral polytype patterning. In rapid thermal chemical vapor deposition, the adjustment of the process parameters or the buffer layer allowed the nucleation and growth of wurtzite silicon carbide. View Full-Text
Keywords: silicon carbide; rapid thermal processing; ion-implantation; epitaxy; CVD; sublimation; polytypism; phase transition; polytype transition; polytype control. silicon carbide; rapid thermal processing; ion-implantation; epitaxy; CVD; sublimation; polytypism; phase transition; polytype transition; polytype control.
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Pezoldt, J.; Cimalla, V. Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing. Crystals 2020, 10, 523.

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