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Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates
Open AccessArticle

Silicon Carbide Microstrip Radiation Detectors

1
Department of Electronics, Information and Bioengineering, Politecnico di Milano, Campus Como, 22100 Como, Italy
2
Department of Physics, Chemistry and Biology, Sensor and Actuator Systems, Linköping University, 58183 Linköping, Sweden
3
Italian National Institute of Nuclear Physics (INFN), Section Milano, 20133 Milan, Italy
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(12), 835; https://doi.org/10.3390/mi10120835
Received: 17 July 2019 / Revised: 27 October 2019 / Accepted: 27 November 2019 / Published: 30 November 2019
(This article belongs to the Special Issue SiC based Miniaturized Devices)
Compared with the most commonly used silicon and germanium, which need to work at cryogenic or low temperatures to decrease their noise levels, wide-bandgap compound semiconductors such as silicon carbide allow the operation of radiation detectors at room temperature, with high performance, and without the use of any bulky and expensive cooling equipment. In this work, we investigated the electrical and spectroscopic performance of an innovative position-sensitive semiconductor radiation detector in epitaxial 4H-SiC. The full depletion of the epitaxial layer (124 µm, 5.2 × 1013 cm−3) was reached by biasing the detector up to 600 V. For comparison, two different microstrip detectors were fully characterized from −20 °C to +107 °C. The obtained results show that our prototype detector is suitable for high resolution X-ray spectroscopy with imaging capability in a wide range of operating temperatures. View Full-Text
Keywords: silicon carbide; semiconductor radiation detector; microstrip detector silicon carbide; semiconductor radiation detector; microstrip detector
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Puglisi, D.; Bertuccio, G. Silicon Carbide Microstrip Radiation Detectors. Micromachines 2019, 10, 835.

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