Controlling material thickness and element interdiffusion at the interface is crucial for many applications of core-shell nanowires. Herein, we report the thickness-controlled and conformal growth of a Sb2Te3 shell over GeTe and Ge-rich Ge-Sb-Te core...
Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge–Sb&nd...
We report the self-assembly of core–shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si substrates by metalorganic chemical vapour deposition, coupled to the vapour–liquid–solid mechanism, catalyzed by Au nanoparticles. Scanning electron micro...
Flexible Sb2Te3-based thermoelectric (TE) materials are promising candidates for fabricating energy devices that power wearable electronics and sensors. Enhancing the TE properties of Sb2Te3 thin films represents a significant scientific investigatio...
As a new generation of non-volatile memory, phase change random access memory (PCRAM) has the potential to fill the hierarchical gap between DRAM and NAND FLASH in computer storage. Sb2Te3, one of the candidate materials for high-speed PCRAM, has hig...
This paper focuses on the photoelectric properties of heterostructures formed by surface-modified Si (111) and hexagonal, quintuple-layered selenides (Bi2Se3 and Sb2Te3). It was shown that H-passivated Si (111) can form robust Schottky junctions with...
The results of study of charge transfer processes in thin amorphous and crystalline Sb2Te3 films in a wide range of frequencies and temperatures are presented. The frequency spectra of conductivity were obtained by the dielectric spectroscopy method....
The p-type Sb2Te3 alloy, a binary compound belonging to the V2VI3-based materials, has been widely used as a commercial material in the room-temperature zone. However, its low thermoelectric performance hinders its application in the low-medium tempe...
Two-dimensional transition metal dichalcogenides (2D-TMDs) possess appropriate bandgaps and interact via van der Waals (vdW) forces between layers, effectively overcoming lattice compatibility challenges inherent in traditional heterojunctions. This...
Magnetron sputtering offers a scalable route to magnetic topological insulators (MTIs) based on Cr-doped Sb2Te3. We combine a range of X-ray diffraction (XRD), reciprocal-space mapping (RSM), scanning transmission electron microscopy (STEM), scanning...
This study explores the development of a water-based hybrid thermoelectric (TE) material composed of Sb2Te3 nanoparticles (NPs) and polyethylene oxide (PEO). Sb2Te3 NPs were synthesized via the microwave-assisted colloidal route, where X-ray diffract...
Antimony telluride (Sb2Te3)-based two-dimensional films and micro-pillar arrays are fabricated by electrochemical deposition from electrolytes containing SbO+ and HTeO2+ on Si wafer-based Pt electrode and multi-channel glass templates, respectively....
Antimony telluride thin films display intrinsic thermoelectric properties at room temperature, although their Seebeck coefficients and electrical conductivities may be unsatisfactory. To address these issues, we designed composite films containing up...
P-type Sb2Te3 films with different thicknesses were deposited on polyimide substrates via heat treatment-assisted DC magnetron sputtering. The correlations between the thickness variance and the structure, dislocation density, surface morphology, the...
Broadband photosensors have been widely studied in various kinds of materials. Experimental results have revealed strong wavelength-dependent photoresponses in all previous reports. This limits the potential application of broadband photosensors. The...
The formation of secondary phases of NiTe2 and NbTe2 in p-type Bi0.5Sb1.5Te3 thermoelectric alloys was investigated through in situ phase separation by using the melt spinning process. Adding stoichiometric Ni, Nb, and Te in a solid-state synthesis p...
MnSb2Te4 has a similar structure to an emerging material, MnBi2Te4. According to earlier theoretical studies, the formation energy of Mn antisite defects in MnSb2Te4 is negative, suggesting its inherent instability. This is clearly in contrast to the...
Ge-Sb-Te compounds (GST), the well-known phase-change materials, are considered to be promising thermoelectric (TE) materials due to their decent thermoelectric performance. While Ge2Sb2Te5 and GeSb2Te4 have been extensively studied, the TE performan...
We investigated the texture formation of Sb2Te thin films for phase change memory applications. The Sb2Te thin films with different thicknesses were deposited on Si (100) wafers by the magnetron sputtering method. As-deposited Sb2Te thin films were a...
Three-dimensional topological insulators (3D-TIs) are a new generation of materials with insulating bulk and exotic metallic surface states that facilitate a wide variety of ground-breaking applications. However, utilization of the surface channels i...
Driven by the huge thermal energy in cement concrete pavements, thermoelectric (TE) cement has attracted considerable attention. However, the current TE cement shows poor performance, which greatly limits its application. Herein, a series of Bi0.5Sb1...
A topological insulator with large bulk-insulating behavior and high electron mobility of the surface state is needed urgently, not only because it would be a good platform for studying topological surface states but also because it is a prerequisite...
Lead-free and eco-friendly GeTe shows promising mid-temperature thermoelectric applications. However, a low Seebeck coefficient due to its intrinsically high hole concentration induced by Ge vacancies, and a relatively high thermal conductivity resul...
Bi2Te3-based alloys are representatively commercialized thermoelectric materials for refrigeration and power generation. Refrigeration mainly utilizes thermoelectric properties near room temperature, while the power generation temperature is relative...
In this study, γ-Al2O3 particles were dispersed in p-type Bi0.4Sb1.6Te3 through mechanical alloying to form γ-Al2O3/Bi0.4Sb1.6Te3 composite powders. The composite powders were consolidated using vacuum hot pressing to produce nano- and microstructure...
In this study, we present a full characterization of the electronic properties of phase change material (PCM) double-layered heterostructures deposited on silicon substrates. Thin films of amorphous Ge-rich Ge-Sb-Te (GGST) alloys were grown by physic...
The origin of chemical ordering in liquid and supercooled liquid Ge2Sb2Te5 (GST) was investigated using ab initio molecular dynamics (AIMD) simulations. Bond dynamics were analyzed via continuous (τcon) and intermittent (τint) lifetimes. The...
Introduction of nonstoichiometry to AgSbTe2-based materials is considered to be an effective way to tune thermoelectric properties similarly to extrinsic doping. To prove this postulate, a systematic physicochemical study of the Ag1−xSb1+xTe2+x alloy...
As the most promising materials for phase-change data storage, the pseudobinary mGeTe•nSb2Te3 (GST) chalcogenides have been widely investigated. Nevertheless, an in-depth understanding of the thermal-transport property of GST is still lacking, w...
For thermoelectric thin film, the substrate plays an important role during the growing process and produces effects on its thermoelectric properties. Some special kinds of substrates provide an optimal combination of influences on both the structure...
Cubic AgSbTe2 compound is a metastable phase within Ag2Te-Sb2Te3 pseudo-binary phase diagram and theoretically rapid cooling molten elements to room temperature may be an effective way to obtain it. In this work, thick films composed of 5–10 nm...
Antimony selenide (Sb2Se3) has been widely investigated as a promising absorber material for photovoltaic devices. However, low open-circuit voltage (Voc) limits the power conversion efficiency (PCE) of Sb2Se3-based cells, largely due to the low-char...
We report the synergistic optimization of the thermoelectric properties in p-type Bi0.48Sb1.52Te3 by the additional graphene. Highly dense Bi0.48Sb1.52Te3 + graphene (x wt%, x = 0, 0.05, 0.1 and 0.15) composites have been synthesized by zone-melting...
The selective polarizers play an important role in silicon-based integrated circuits. The previous polarizers based on silicon waveguides have the defects of large scale and low extinction ratio. In this work, TM- and TE-pass polarizers only 10 μm...
The exploration initiated by the discovery of the topological insulator (BixSb1−x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electr...
Laser pulses can be utilized to induce intermediate states of phase change materials between amorphous and crystalline phases, making phase change materials attractive and applicable for multi-level storage applications. In this paper, intermediate s...
P-type BiSbTe alloys have been widely implemented in waste heat recovery from low-grade heat sources below 600 K, which may involve assorted environments and conditions, such as long-term service, high-temperature exposure (generally 473–573 K) and m...
Electrical probe memory using Ge2Sb2Te5 media has been considered a promising candidate in the future archival storage market due to its potential for ultra-high density and long data retention time. However, most current research efforts have been d...
The radiation shielding characteristics of samples from two TeO2 and Sb2O3-based basic glass groups were investigated in this research. TeO2 and Sb2O3-based glasses were determined in the research as six samples with a composition of 10WO3-(x)MoO3-(9...
We developed a water-free atomic layer deposition (ALD) process to homogeneously deposit SbOx using SbCl5 and Sb-Ethoxide as precursors, and report it here for the first time. The coating is applied on Bi2Te3 particles synthesized via the solvotherma...
In order to realize high-performance thermoelectric materials, a way to obtain small grain size is necessary for intensification of the phonon scattering. Here, we use a melt-spinning-spark plasma sintering process for making p-type Bi0.36Sb1.64Te3 t...
In this work, we developed nanostructured Bi2Te3 and Sb2Te3 thin films by thermal co-evaporation of their alloys with corresponding pure elements (Bi, Sb, and Te). The films were fabricated on borosilicate glass at different substrate temperatures an...
Ge2Sb2Te5 based devices attract the attention of researchers due to wide opportunities in designing phase change memory. Herein, we studied a possibility to fabricate periodic micro- and nanorelief at surfaces of Ge2Sb2Te5 thin films on silicon oxide...
Phase-change random-access memory (PCRAM) holds great promise for next-generation information storage applications. As a mature phase change material, Ge2Sb2Te5 alloy (GST) relies on the distinct electrical properties of different states to achieve i...
A [GeTe/Sb2Te3] superlattice is known as a topological insulator. It shows magnetic responses such as magneto-optical effect, magneto resistance, magneto capacitance, and so on. We have reported that [GeTe/Sb2Te3] superlattice film has a large spin–o...
The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi0.4Sb0.6)2Te3 films...
We report on the development of thermoelectrically cooled (TE-cooled) InAs/GaSb type-II superlattice (T2SL) single element infrared (IR) photodetectors and exemplify their applicability for real-time IR spectroscopy in the mid-infrared in a possible...
In this paper, we theoretically and numerically demonstrate a thermally controlled broadband absorber based on the phase change material Ge2Sb2Te5 (GST). When GST operates in the amorphous state, the proposed metamaterial acts as a broadband nearly p...
The morphological, structural, and electrical properties of as-grown and annealed Ge2Sb2Te5 (GST) layers, deposited by RF-sputtering on flexible polyimide, were studied by means of optical microscopy, atomic force microscopy, X-ray diffraction, Raman...
Ultrathin films of the ternary topological insulator (Bi0.4Sb0.6)2Te3 are fabricated by molecular beam epitaxy. Although it is generally assumed that the ternary topological insulator tellurides grow by van der Waals epitaxy, our results show that th...
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