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The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

1
Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
2
Center of Crystal Research, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
3
Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
4
Taiwan Consortium of Emergent Crystalline Materials, TCECM, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
5
Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editors: Erwin Peiner and Pilgyu Kang
Sensors 2021, 21(4), 1535; https://doi.org/10.3390/s21041535
Received: 17 December 2020 / Revised: 27 January 2021 / Accepted: 19 February 2021 / Published: 23 February 2021
(This article belongs to the Special Issue The Research and Application of Graphene Phototransducer)
Broadband photosensors have been widely studied in various kinds of materials. Experimental results have revealed strong wavelength-dependent photoresponses in all previous reports. This limits the potential application of broadband photosensors. Therefore, finding a wavelength-insensitive photosensor is imperative in this application. Photocurrent measurements were performed in Sb2Te3 flakes at various wavelengths ranging from visible to near IR light. The measured photocurrent change was insensitive to wavelengths from 300 to 1000 nm. The observed wavelength response deviation was lower than that in all previous reports. Our results show that the corresponding energies of these photocurrent peaks are consistent with the energy difference of the density of state peaks between conduction and valence bands. This suggests that the observed photocurrent originates from these band structure peak transitions under light illumination. Contrary to the most common explanation that observed broadband photocurrent carrier is mainly from the surface state in low-dimensional materials, our experimental result suggests that bulk state band structure is the main source of the observed photocurrent and dominates the broadband photocurrent. View Full-Text
Keywords: Sb2Te3; broadband photodetector; uniform responsivity Sb2Te3; broadband photodetector; uniform responsivity
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MDPI and ACS Style

Huang, S.-M.; Hung, J.-L.; Chou, M.; Chen, C.-Y.; Liu, F.-C.; Chen, R.-S. The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes. Sensors 2021, 21, 1535. https://doi.org/10.3390/s21041535

AMA Style

Huang S-M, Hung J-L, Chou M, Chen C-Y, Liu F-C, Chen R-S. The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes. Sensors. 2021; 21(4):1535. https://doi.org/10.3390/s21041535

Chicago/Turabian Style

Huang, Shiu-Ming; Hung, Jai-Lung; Chou, Mitch; Chen, Chi-Yang; Liu, Fang-Chen; Chen, Ruei-San. 2021. "The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes" Sensors 21, no. 4: 1535. https://doi.org/10.3390/s21041535

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