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Open AccessArticle

Self-Filtering Monochromatic Infrared Detectors Based on Bi2Se3 (Sb2Te3)/Silicon Heterojunctions

School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
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Nanomaterials 2019, 9(12), 1771; https://doi.org/10.3390/nano9121771
Received: 8 November 2019 / Revised: 2 December 2019 / Accepted: 10 December 2019 / Published: 12 December 2019
This paper focuses on the photoelectric properties of heterostructures formed by surface-modified Si (111) and hexagonal, quintuple-layered selenides (Bi2Se3 and Sb2Te3). It was shown that H-passivated Si (111) can form robust Schottky junctions with either Bi2Se3 or Sb2Te3. When back illuminated (i.e., light incident towards the Si side of the junction), both the Bi2Se3/Si and Sb2Te3/Si junctions exhibited significant photovoltaic response at 1030 nm, which is right within the near-infrared (NIR) light wavelength range. A maximum external quantum efficiency of 14.7% with a detection response time of 2 ms for Bi2Se3/Si junction, and of 15.5% with a 0.8 ms response time for the Sb2Te3/Si junction, were achieved. Therefore, utilizing Si constituents as high-pass filters, the Bi2Se3 (Sb2Te3)/Si heterojunctions can serve as monochromatic NIR photodetectors. View Full-Text
Keywords: Bi2Se3; Sb2Te3; Si photovoltaic detector; external quantum efficiency; response time Bi2Se3; Sb2Te3; Si photovoltaic detector; external quantum efficiency; response time
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MDPI and ACS Style

Pan, X.; He, J.; Gao, L.; Li, H. Self-Filtering Monochromatic Infrared Detectors Based on Bi2Se3 (Sb2Te3)/Silicon Heterojunctions. Nanomaterials 2019, 9, 1771.

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