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Open AccessArticle

Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications

School of Information Engineering, Nanchang Hang Kong University, Nanchang 330069, China
Author to whom correspondence should be addressed.
Nanomaterials 2018, 8(6), 368;
Received: 17 April 2018 / Revised: 4 May 2018 / Accepted: 15 May 2018 / Published: 25 May 2018
Electrical probe memory using Ge2Sb2Te5 media has been considered a promising candidate in the future archival storage market due to its potential for ultra-high density and long data retention time. However, most current research efforts have been devoted to the writing of crystalline bits using electrical probe memory while ignoring the viability of writing amorphous bits. Therefore, this paper proposes a physical, realistic, full three-dimensional model to optimize the practicable media stack by spatially and temporally calculating temperature distributions inside the active media during the writing of amorphous bits. It demonstrates the feasibility of using an optimized device that follows a Silicon/Titanium Nitride/Ge2Sb2Te5/Diamond-Like Carbon design with appropriate electro-thermal properties and thickness to achieve ultra-high density, low energy consumption, and a high data rate without inducing excessive temperature. The ability to realize multi-bit recording and rewritability using the designed device is also proven, making it attractive and suitable for practicable applications. View Full-Text
Keywords: Ge2Sb2Te5; amorphization; probe; optimization; model Ge2Sb2Te5; amorphization; probe; optimization; model
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MDPI and ACS Style

Wang, L.; Yang, C.; Wen, J.; Xiong, B. Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications. Nanomaterials 2018, 8, 368.

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