Electrical probe memory using Ge2
media has been considered a promising candidate in the future archival storage market due to its potential for ultra-high density and long data retention time. However, most current research efforts have been devoted to the writing of crystalline bits using electrical probe memory while ignoring the viability of writing amorphous bits. Therefore, this paper proposes a physical, realistic, full three-dimensional model to optimize the practicable media stack by spatially and temporally calculating temperature distributions inside the active media during the writing of amorphous bits. It demonstrates the feasibility of using an optimized device that follows a Silicon/Titanium Nitride/Ge2
/Diamond-Like Carbon design with appropriate electro-thermal properties and thickness to achieve ultra-high density, low energy consumption, and a high data rate without inducing excessive temperature. The ability to realize multi-bit recording and rewritability using the designed device is also proven, making it attractive and suitable for practicable applications.
This is an open access article distributed under the Creative Commons Attribution License
which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited