Next Article in Journal
Functionalization Effect on Polymer Nanocomposite Coatings Based on TiO2–SiO2 Nanoparticles with Superhydrophilic Properties
Previous Article in Journal
High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires
Article Menu
Issue 6 (June) cover image

Export Article

Open AccessArticle
Nanomaterials 2018, 8(6), 368; https://doi.org/10.3390/nano8060368

Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications

School of Information Engineering, Nanchang Hang Kong University, Nanchang 330069, China
*
Author to whom correspondence should be addressed.
Received: 17 April 2018 / Revised: 4 May 2018 / Accepted: 15 May 2018 / Published: 25 May 2018
Full-Text   |   PDF [2576 KB, uploaded 25 May 2018]   |  

Abstract

Electrical probe memory using Ge2Sb2Te5 media has been considered a promising candidate in the future archival storage market due to its potential for ultra-high density and long data retention time. However, most current research efforts have been devoted to the writing of crystalline bits using electrical probe memory while ignoring the viability of writing amorphous bits. Therefore, this paper proposes a physical, realistic, full three-dimensional model to optimize the practicable media stack by spatially and temporally calculating temperature distributions inside the active media during the writing of amorphous bits. It demonstrates the feasibility of using an optimized device that follows a Silicon/Titanium Nitride/Ge2Sb2Te5/Diamond-Like Carbon design with appropriate electro-thermal properties and thickness to achieve ultra-high density, low energy consumption, and a high data rate without inducing excessive temperature. The ability to realize multi-bit recording and rewritability using the designed device is also proven, making it attractive and suitable for practicable applications. View Full-Text
Keywords: Ge2Sb2Te5; amorphization; probe; optimization; model Ge2Sb2Te5; amorphization; probe; optimization; model
Figures

Graphical abstract

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Wang, L.; Yang, C.; Wen, J.; Xiong, B. Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications. Nanomaterials 2018, 8, 368.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Nanomaterials EISSN 2079-4991 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top