172 Results Found

InAsPSb is an emerging material used as an efficient barrier in quantum well structures, and the resulting devices can be employed in the mid-infrared region of the electromagnetic spectrum. This study investigates the photoreflectance spectra of two...

In this paper, ab initio calculations are used to determine polarization difference in zinc blende (ZB), hexagonal (H) and wurtzite (WZ) AlN-GaN and GaN-InN superlattices. It is shown that a polarization difference exists between WZ nitride compounds...

In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the AlxGa1−xN/GaN/AlxGa1−xN...

Surface undulation was formed while growing InGaN/GaN multi-quantum wells on a semi-polar m-plane (1–100) sapphire substrate. Two distinct facets, parallel to 112¯2 and 011¯1, were formed in the embedded multi-quantum wells (MQWs). Th...

GaN-based quantum well infrared detectors can make up for the weakness of GaAs-based quantum well infrared detectors for short-wave infrared detection. In this work, GaN/AlN (1.8 nm/1.8 nm) multi-quantum wells have been epitaxially grown on sapphire...

This article reviews the synthesis, structural and optical characterizations of some novel luminescent two dimensional organic-inorganic perovskite (2DOIP) semiconductors. These 2DOIP semiconductors show a self-assembled nano-layered structure, havin...

We introduced multiquantum-barrier (MQB) nanostructures into the barrier layers of InGaN/GaN multiquantum-well (MQW) heterostructures to improve the operation characteristics of the light-emitting devices. The electroluminescence (EL) spectra were ex...

In this paper, we present a comparative analysis of the optical properties of non-polar and polar GaN/AlGaN multi-quantum well (MQW) structures by time-resolved photoluminescence (TRPL) and pressure-dependent studies. The lack of internal electric fi...

The demand for eye-safe 1550 nm pulsed semiconductor laser-emission modules is increasing in the field of active laser detection, owing to their long range and high precision. The high power and narrow pulse of these modules can significantly improve...

Incorporation into the multi-layered active region of a semiconductor light-emitting structure specially designed intermediate carrier blocking layers (IBLs) allows efficient control over the carrier injection distribution across the structure’...

We investigated the conduction- and valence-confined energy levels and first band-to-band transition energies of a type-II InAs/GaSb multi-quantum-well at 77 K and room temperature for various well and barrier thicknesses. We calculated the electron...

A novel AlGaInAs/InP electro-absorption modulated laser (EML) with a simple fabrication process is proposed, in which the electro-absorption modulator (EAM) has a 10 nm blueshift induced by quantum well intermixing (QWI) and is monolithically integra...

In this article, a method for indium phosphide (InP) electro-optic modulator (EOM) optimization is introduced. The method can be used for the design and analysis of an EOM based on the Mach-Zehnder interferometer (MZI) design. This design is based on...

In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free layer AlGaN ultra-violet (UV) light-emitting diode (LED) using polarization-engineered heart-sh...

A 1.55 μm AlGaInAs multi-quantum-well (MQW) ridge waveguide polarization mode controller (PMC) is proposed. The design is based on an asymmetric half-ridge waveguide structure in which the ridge is shallow etched on one side and has a deeply etched m...

We present an integrated device combining a double L-shaped chiral metasurface with long-wavelength GaAs/AlGaAs quantum well infrared photodetectors (QWIPs), achieving a circular polarized extinction ratio (CPER) as high as 45 in the long-wavelength...

The defectiveness of InGaN-based quantum wells increases with low indium contents, due to the compressive strain induced by the lattice mismatch between the InGaN and GaN layers, and to the stronger incorporation of defects favored by the presence of...

To explain the negative capacitance (NC) characteristic of multi-quantum-well (MQW) LEDs, we calculated the continuity equation for a 10-period AlGaInP/GaInP multi-quantum-well (MQW) LED with a mesa size of 90 × 150 μm and build an MQW LED c...

The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform. The use of silicon (Si) photonics platform to fabricate photonic integrated circuits (PICs) is a...

Due to their low power consumption, high modulation speed, and low cost, vertical-cavity surface-emitting lasers (VCSEL) dominate short-reach data communications as the light source. In this paper, we propose a compact equivalent circuit model with n...

Nanorod array and planar green-emission InGaN/GaN multi-quantum well (MQW) LEDs were fabricated by lithography, nano-imprinting, and top–down etching technology. The defect-pinning effect of the nanostructure was found for the first time. The r...

In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting. Visible LEDs have yet matured, but research on deep ultraviolet (UV) L...

In this work, we report on the implementation of a multi-quantum cascade laser (QCL) module as an innovative light source for quartz-enhanced photoacoustic spectroscopy (QEPAS) sensing. The source is composed of three different QCLs coupled with a di...

A novel Multi-Quantum-Well Deep Ultra Violet Light Emitting Diode (DUV-LED) device with a near-pole hole insertion layer and far-pole hole insertion layer was proposed and carefully studied. It was found that remarkable enhancements both in the light...

The micro-bolometer is important in the field of infrared imaging, although improvements in its performance have been limited by traditional materials. SiGe/Si multi-quantum-well materials (SiGe/Si MQWs) are novelty thermal-sensitive materials with a...

Light-emitting diodes (LEDs) with high modulation bandwidth are required for high-speed visible light communication applications. Crystal orientation in the GaN LED structure plays a key factor in its modulation bandwidth as the recombination lifetim...

In this paper, the edge strain relaxation of InGaN/GaN MQW micro-pillars is studied. Micro-pillar arrays with a diameter of 3–20 μm were prepared on a blue GaN LED wafer by inductively coupled plasma (ICP) etching. The peak wavelength shift...

Vertical-cavity surface emitting lasers in UVA band (UVA VCSELs) operating at a central wavelength of 395 nm are designed by employing PICS3D(2021) software. The simulation results indicate that the thickness of the InGaN quantum well and GaN barrier...

Micro-LED arrays exhibit high brightness, a long lifespan, low power consumption, and a fast response speed. In this paper, we have proposed a series-biased micro-LED array by using a nitride layer with multi-quantum wells epitaxial on sapphire subst...

The optoelectronic effects of sidewall passivation on micro-light-emitting diodes (Micro-LEDs) were investigated using sol-gel chemical synthesis. Blue InGaN/GaN multi-quantum well (MQW) Micro-LEDs, ranging in size from 20 × 20 μm to 100 &ti...

The growth of InGaAs quantum wells (QWs) epitaxially on InP substrates is of great interest due to their wide application in optoelectronic devices. However, conventional molecular beam epitaxy requires substrate temperatures between 400 and 500 °...

The GaInAsSb material has been conventionally grown on lattice-matched GaSb substrates. In this work, we transplanted this material onto the GaAs substrates in molecular beam epitaxy (MBE). The threading dislocations (TDs) originating from the large...

A theoretical study of RF-photonic channelizers using four architectures formed by active integrated filters with tunable gains is presented. The integrated filters are enabled by two- and four-port nano-photonic couplers (NPCs). Lossless and three i...

We report a monolithic GaN-based light-emitting diode (LED) platform capable of color-tunable white-light emission via LED size scaling. By varying the LED size from 800 µm to 50 µm, the injection current density was effectively controlle...

The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) u...

Novel zinc-blende (zb) group-IV binary XC and ternary XxY1−xC alloys (X, Y ≡ Si, Ge, and Sn) have recently gained scientific and technological interest as promising alternatives to silicon for high-temperature, high-power optoelectronics,...

Quantum machine learning is a promising application of quantum computing for data classification. However, most of the previous research focused on binary classification, and there are few studies on multi-classification. The major challenge comes fr...

In this paper, we present the optical and electrical properties of surface-patterned GaAs-based Multiquantum Well (MQW) light emitting diodes (LEDs) with one- and two-dimensional photonic crystal (PhC) structures. Optical properties were analyzed in...

We study the compatibility (or joint measurability) of quantum observables in a setting where the experimenter has access to multiple copies of a given quantum system, rather than performing the experiments on each individual copy separately. We intr...

A new scenario for energy distribution, security and shareability is presented that assumes the availability of quantum information heat engines and a thermal bath. It is based on the convertibility between entropy and work in the presence of a therm...

The low-chirp operation of distributed feedback lasers is highly desirable in high-speed and high-bit rate optical transmission. In this article, we address this issue by theoretically investigating the possibility of further a reduction in the linew...

This article presents, for the first time, a new approach to building quantum circuits for the initialization of two multi-qubit superpositions, namely, two different superpositions in one circuit, not in two separate circuits. For this, we introduce...

We examine how the weak excitation regime of a quantum well confined in a semiconductor microcavity (SM) influences the dynamics of quantum coherence and the total phase. We analyze the impact of the physical parameters on different quantumness measu...

Any single system whose space of states is given by a separable Hilbert space is automatically equipped with infinitely many hidden tensor-like structures. This includes all quantum mechanical systems as well as classical field theories and classical...

Physical implementations of quantum key distribution (QKD) protocols, like the Bennett-Brassard (BB84), are forced to use attenuated coherent quantum states, because the sources of single photon states are not functional yet for QKD applications. How...

With the rapid development of quantum communication technologies, controlled double-direction cyclic (CDDC) quantum communication has become an important research direction. However, how to choose an appropriate quantum state as a channel to achieve...

The architecture of the Manned/Unmanned Aerial Vehicle Collaborative Operation System (MAV/UAV COS) is crucial for improving combat effectiveness and resource utilization efficiency. Optimizing this architecture involves managing complex, interdepend...

In this article we present our latest work on the optimization of mid-infrared quantum cascade laser fabrication techniques. Our efforts are focused on low dissipation devices, broad-area high-power photonic crystal lasers, as well as multi-wavelengt...

Knowing the level of entanglement robustness against quantum bit loss or decoherence mechanisms is an important issue for any application of quantum information. Fidelity of states can be used to judge whether there is entanglement in multi-particle...

Convexity performs its due role in the theoretical field of inequalities according to the nature and conduct of the properties it displays. A correlation connectivity, which is visible between the two variables symmetry and convexity, enhances its im...