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Appl. Sci. 2017, 7(4), 380;

Performance of Nanostructures within InGaN-Based Multiquantum-Well Light-Emitting Devices

Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan
College of Engineering, Chang Gung University, Taoyuan 333, Taiwan
Department of Electrical Engineering, Taipei City University of Science and Technology, Taipei 112, Taiwan
Author to whom correspondence should be addressed.
Received: 26 January 2017 / Revised: 6 April 2017 / Accepted: 10 April 2017 / Published: 11 April 2017
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We introduced multiquantum-barrier (MQB) nanostructures into the barrier layers of InGaN/GaN multiquantum-well (MQW) heterostructures to improve the operation characteristics of the light-emitting devices. The electroluminescence (EL) spectra were examined over a broad range of temperatures for the samples. We observed inhibited carrier leakage for the sample with the MQB nanostructures. Greater inhomogeneity of nanocrystallite size and a stronger localization effect were also observed for the sample. To interpret this phenomenon, high-resolution X-ray diffraction curves were measured and analyzed using the Warren–Averbach model. External quantum efficiency as a function of temperature was also evaluated. The calculation results correspond with the inference the EL measurements provided. We determined that the performance of the light-emitting devices is enhanced by the MQB nanostructures within InGaN/GaN MQWs. View Full-Text
Keywords: multiquantum barrier; multiquantum well; electroluminescence; efficiency multiquantum barrier; multiquantum well; electroluminescence; efficiency

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Wu, Y.-F.; Lee, J.-C. Performance of Nanostructures within InGaN-Based Multiquantum-Well Light-Emitting Devices. Appl. Sci. 2017, 7, 380.

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