Next Article in Journal
Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption
Next Article in Special Issue
Overview of the Characteristics of Micro- and Nano-Structured Surface Plasmon Resonance Sensors
Previous Article in Journal
Preparation of Mesoporous and/or Macroporous SnO2-Based Powders and Their Gas-Sensing Properties as Thick Film Sensors
Previous Article in Special Issue
A Miniature Fiber Optic Refractive Index Sensor Built in a MEMS-Based Microchannel
Article

Active Integrated Filters for RF-Photonic Channelizers

1
Department of Electrical Engineering, University of Texas at Dallas, P.O. Box 830688, Richardson, TX 75083, USA
2
Department of Mathematical Sciences, University of Texas at Dallas, P.O. Box 830688, Richardson, TX 75083, USA
3
Department of Electrical Engineering, Southern Methodist University, P.O. Box 750338, Dallas, TX 75275, USA
*
Author to whom correspondence should be addressed.
Sensors 2011, 11(2), 1297-1320; https://doi.org/10.3390/s110201297
Received: 15 December 2010 / Revised: 17 January 2011 / Accepted: 17 January 2011 / Published: 25 January 2011
(This article belongs to the Special Issue Optical Resonant Microsensors)
A theoretical study of RF-photonic channelizers using four architectures formed by active integrated filters with tunable gains is presented. The integrated filters are enabled by two- and four-port nano-photonic couplers (NPCs). Lossless and three individual manufacturing cases with high transmission, high reflection, and symmetric couplers are assumed in the work. NPCs behavior is dependent upon the phenomenon of frustrated total internal reflection. Experimentally, photonic channelizers are fabricated in one single semiconductor chip on multi-quantum well epitaxial InP wafers using conventional microelectronics processing techniques. A state space modeling approach is used to derive the transfer functions and analyze the stability of these filters. The ability of adapting using the gains is demonstrated. Our simulation results indicate that the characteristic bandpass and notch filter responses of each structure are the basis of channelizer architectures, and optical gain may be used to adjust filter parameters to obtain a desired frequency magnitude response, especially in the range of 1–5 GHz for the chip with a coupler separation of ~9 mm. Preliminarily, the measurement of spectral response shows enhancement of quality factor by using higher optical gains. The present compact active filters on an InP-based integrated photonic circuit hold the potential for a variety of channelizer applications. Compared to a pure RF channelizer, photonic channelizers may perform both channelization and down-conversion in an optical domain. View Full-Text
Keywords: photonic channelizer; active filters; four-port coupler; state space representation photonic channelizer; active filters; four-port coupler; state space representation
Show Figures

Graphical abstract

MDPI and ACS Style

El Nagdi, A.; Liu, K.; LaFave, T.P., Jr.; Hunt, L.R.; Ramakrishna, V.; Dabkowski, M.; MacFarlane, D.L.; Christensen, M.P. Active Integrated Filters for RF-Photonic Channelizers. Sensors 2011, 11, 1297-1320. https://doi.org/10.3390/s110201297

AMA Style

El Nagdi A, Liu K, LaFave TP Jr., Hunt LR, Ramakrishna V, Dabkowski M, MacFarlane DL, Christensen MP. Active Integrated Filters for RF-Photonic Channelizers. Sensors. 2011; 11(2):1297-1320. https://doi.org/10.3390/s110201297

Chicago/Turabian Style

El Nagdi, Amr, Ke Liu, Tim P. LaFave Jr., Louis R. Hunt, Viswanath Ramakrishna, Mieczyslaw Dabkowski, Duncan L. MacFarlane, and Marc P. Christensen. 2011. "Active Integrated Filters for RF-Photonic Channelizers" Sensors 11, no. 2: 1297-1320. https://doi.org/10.3390/s110201297

Find Other Styles

Article Access Map by Country/Region

1
Only visits after 24 November 2015 are recorded.
Back to TopTop