- Article
Effect of Annealing Time of GaN Buffer Layer on Curvature and Wavelength Uniformity of Epitaxial Wafer
- Huanyou Wang,
- Guangqi Xie and
- Yingying Zhan
In this study, the curvature changes of an unintentionally doped GaN end and third quantum well were observed in situ when the annealing times of a GaN buffer layer were 40 s, 50 s and 55 s, respectively. When the annealing time was increased from 40...