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Open AccessArticle

Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope

1
Institute of Fundamental Technological Research, Polish Academy of Sciences (IPPT PAN), Adolfa Pawińskiego 5b, 02-106 Warsaw, Poland
2
Institute of Electronic Materials Technology (ITME), Wólczyńska 133, 01-919 Warsaw, Poland
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(10), 1452; https://doi.org/10.3390/nano9101452
Received: 12 September 2019 / Revised: 2 October 2019 / Accepted: 3 October 2019 / Published: 12 October 2019
Patterning of lines of holes on a layer of positive photoresist SX AR-P 3500/6 (Allresist GmbH, Strausberg, Germany) spin-coated on a quartz substrate is carried out by using scanning near-field optical lithography. A green 532 nm-wavelength laser, focused on a backside of a nanoprobe of 90 nm diameter, is used as a light source. As a result, after optimization of parameters like laser power, exposure time, or sleep time, it is confirmed that it is possible to obtain a uniform nanopattern structure in the photoresist layer. In addition, the lines of holes are characterized by a uniform depth (71–87 nm) and relatively high aspect ratio ranging from 0.22 to 0.26. Numerical modelling performed with a rigorous method shows that such a structure can be potentially used as a phase zone plate. View Full-Text
Keywords: optical lithography; photoresist; quartz; hole nanopatterning optical lithography; photoresist; quartz; hole nanopatterning
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MDPI and ACS Style

Roszkiewicz, A.; Jain, A.; Teodorczyk, M.; Nasalski, W. Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope. Nanomaterials 2019, 9, 1452.

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