In order to understand the impacts of dielectric barrier on the discharge characteristics of a nanosecond pulsed surface dielectric barrier discharge (NS-DBD), the effects of dielectric constant and dielectric barrier thickness are numerically invest...
The objective of this study is the investigation of dielectric barrier discharges (DBDs) with the solid plates and the flexible polymer films. A high capacitance with a high dielectric constant and a small thickness is responsible for the discharge o...
Multilayer films can achieve advanced properties and a wide range of applications. The heterogeneous interface plays an important role in the performances of multilayer films. In this paper, the effects of the interface of Ba(Mg1/3Ta2/3)O3/PbZr0.52Ti...
Silicon-based light emitting diodes (LED) are indispensable elements for the rapidly growing field of silicon compatible photonic integration platforms. In the present study, graphene has been utilized as an interfacial layer to realize a unique illu...
An increasing number of different types of dielectric liquids are appearing on the market. This is undoubtedly related to sustainable development goals. This paper presents comparative studies of the lightning impulse breakdown voltage (LIBV) of six...
A numerical simulation of a pulsed floating electrode dielectric barrier discharge (FE-DBD) at atmospheric pressure, used for melanoma cancer cell therapy, is performed using a plasma model in COMSOL Multiphysics software. Distributions of electron d...
The thickness of the LPCVD-Si3N4 gate dielectric layer significantly influences the electron transport properties of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), but the mechanism by which it aff...
Photosensitive polyimides (PSPIs) have been widely developed in microelectronics, which is due to their excellent thermal properties and reasonable dielectric properties and can be directly patterned to simplify the processing steps. In this study, 3...
Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used...
Avoiding ice accumulation on aerodynamic components is of enormous importance to flight safety. Novel approaches utilizing surface dielectric barrier discharges (SDBDs) are expected to be more efficient and effective than conventional solutions for p...
We reported the analysis and modeling of some conduction mechanisms in ultrathin aluminum oxide (Al2O3) films of 6 nm thickness, which are deposited by atomic layer deposition (ALD). This modeling included current-voltage measurements to metal-insula...
Non-thermal plasma (NTP) conversion applications have become an emerging technology of increasing global interest due to their particular ability to perform at atmospheric pressure and ambient temperature. This study focuses on a specific case of a d...
In this paper, we have investigated the deposition of thin films from natural carvacrol extract using dielectric barrier discharge (DBD) plasma polymerization, aiming at the inhibition of bacteria adhesion and proliferation. The films deposited on st...
Thermal barrier coatings (TBCs) can significantly reduce the operating temperature of the aeroengine turbine blade substrate, and their testing technology is very urgently demanded. Due to their complex multi-layer structure, it is hard to evaluate T...
A planar volume dielectric barrier discharge (DBD) in pure carbon dioxide (CO2) for the formation of carbon monoxide (CO) is examined by combined electrical and CO density measurements. The influence of the type of electrode, the barrier material, th...
Owing to its high penetrability with dielectric materials, terahertz time domain spectroscopy (THz-TDS) is a promising nondestructive measurement technology. The coating thickness deviation and defect of thermal barrier coatings (TBC) will affect its...
Hexagonal boron nitride (hBN) is a layered material with a wide variety of excellent properties for emergent applications in quantum photonics using atomically thin materials. For example, it hosts single-photon emitters that operate up to room-tempe...
Ceramic composites with nanoparticles are intensively investigated due to their unique thermal, mechanic and electromagnetic properties. In this work, dielectric properties of phosphate ceramics with round silver nanoparticles of various sizes were s...
The recent developments in the replacement of bulk MOSFETs with high-performance semiconductor devices create new opportunities in attaining the best device configuration with drive current, leakage current, subthreshold swing, Drain-Induced Barrier...
Interface-passivated graphene/silicon Schottky junction solar cells have demonstrated promising features with improved stability and power conversion efficiency (PCE). However, there are some misunderstandings in the literature regarding some of the...
The Cu/low-k damascene process was introduced to alleviate the increase in the RC delay of Al/SiO2 interconnects, but now that the technology generation has reached 1× nm or lower, a number of limitations have become apparent. Due to the integr...
We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using g...
A time-sequential working, spatially-multiplexed autostereoscopic 3D display design consisting of a fast switchable RGB-color filter array and a fast color display is presented. The newly-introduced 3D display design is usable as a multi-user display...
We report the electrical properties of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) structures with a Ga2O3 passivation layer grown by metal–organic chemical vapor deposition (MOCVD). In this study, three different thicknesses...
The plasma-based aerosol process developed for the direct coating of particles in gases with silicon oxide in a continuous chemical vapor deposition (CVD) process is presented. It is shown that non-thermal plasma filaments induced in a dielectric bar...
Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the...
This paper details the design, fabrication, and characterization of highly uniform batch-fabricated sidewall etched vertical nanogap tunneling junctions for bio-sensing applications. The device consists of two vertically stacked gold electrodes separ...
This paper presents the simulation results for dielectric barrier discharge (DBD) at atmospheric pressure in argon gas for different relative permittivity, granule shape, thickness layer, and granule diameter measurements for starch on the breakdown...
Eugenol (4-Allyl-2-methoxyphenol) is the main constituent of clove oil. In addition to being widely used as a condiment, it has been recognized as a powerful bactericide. Owing to that, Eugenol has been used in several applications including odontolo...
Plasma-activated solution has attracted more attention in the food industry due to no chemical residue and good bacteriostatic properties. This study aimed to evaluate the effects of plasma-activated hydrogen peroxide solution (PAH) on the morphophys...
Thermosensitive Poly(N-isopropylacrylamide) (PNIPAm) films were synthesized via atmospheric pressure dielectric barrier discharge (APDBD) plasma polymerization. In order to control the thickness of the films, a spin coating technique was used during...
This work focuses on developing resistive switching (RS) devices using thermally annealed (TA) SiO2/Si multilayers (ML). Three SiO2/Si bilayers were deposited with an additional 10 nm SiO2 layer as a dielectric barrier layer on top of the ML. The SiO...
Ferroelectricity in hafnium oxide (HfO2)-based thin films has emerged as a scalable pathway toward CMOS-compatible non-volatile memories and logic devices. This study examines how dopant chemistry and film thickness influence the stabilization of the...
In this paper, a novel doping-less tunneling field-effect transistor with Si0.6Ge0.4 heterojunction (H-DLTFET) is proposed using TCAD simulation. Unlike conventional doping-less tunneling field-effect transistors (DLTFETs), in H-DLTFETs, germanium an...
The goal of this stydy was to explore the potential of the enhanced corrosion resistance of Ti(N,O) cathodic arc evaporation-coated 304L stainless steel using oxide nano-layers deposited by atomic layer deposition (ALD). In this study, we deposited A...
The use of low-voltage-driven plasma in atmospheric pressure (AP) plasma polymerization is considered as a simple approach to reducing the reactivity of the monomer fragments in order to prevent excessive cross-linking, which would have a negative ef...
The utilization of a nanoporous (NP) GaN fabricated by electrochemical etching has been demonstrated to be effective in the fabrication of a high-performance ultraviolet (UV) photodetector (PD). However, the NP-GaN PD typically exhibits a low light-d...
Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The “diode-like” currents through the symmetric atomic layer deposited (ALD) HfO2/Al2O...
Cold atmospheric plasma (CAP) has been widely used in biomedicine during the last two decades. While direct plasma treatment has been reported to promote wound healing, its application can be uneven and inconvenient. In this study, we first activated...
This study aims to bridge various diagnostic tools for the development of smart plasma electrolytic oxidation (PEO) technologies. PEO treatments of commercially pure Zr were carried out using the pulsed unipolar polarisation (PUP) regime with frequen...
In this study, humidified air dielectric barrier discharge (DBD) plasma was used to inactivate Escherichia coli (E. coli), Staphylococcus aureus (S. aureus), and bacteriophages in biofilms containing DNA, NaCl, carbohydrates, and proteins. The humidi...
The all-sputtered Al/SiO2/p-GaN metal-oxide-semiconductor (MOS) Schottky diode was fabricated by the cost-effective radio-frequency sputtering technique with a cermet target at 400 °C. Using scanning electron microscope (SEM), the thicknesses of...
This research presents an experimental analysis of the influence of atmospheric pressure plasma on the performance of a micro horizontal-axis wind turbine blade. The investigation was conducted using an NACA 4412 airfoil equipped with a dielectric ba...
At the 90-nm node, the rate of transistor miniaturization slows down due to challenges in overcoming the increased leakage current (Ioff). The invention of high-k/metal gate technology at the 45-nm technology node was an enormous step forward in exte...