Since the discovery of ferroelectricity in HfO2-based materials which are comparable to the complementary metal-oxide–semiconductor (CMOS) fabrication process—a negative capacitance effect in the HfO2-based materials has been actively stu...
The discovery of ferroelectricity in HfO2 thin film, which is compatible with the CMOS process, has revived interest in ferroelectric memory devices. HfO2 has been found to exhibit high ferroelectricity at a few nanometers thickness, and studies have...
HfO2-based ferroelectric materials have been widely studied for their application in ferroelectric FETs, which are compatible with conventional CMOS processes; however, problems with the material’s inherent fatigue properties have limited its potenti...
Ferroelectric polycrystalline HfO2 thin films are the most promising material for the implementation of novel non-volatile ferroelectric memories because of their attractive properties, such as compatibility with modern Si technology, perfect scalabi...
Background: Hafnium Dioxide (HfO2) represents a hopeful material for gate dielectric thin films in the field of semiconductor integrated circuits. For HfO2, several crystal structures are possible, with different properties which can be difficult to...
Hafnium oxide thin films have been extensively investigated for high-speed and low-power memory applications. Herein, we investigated the influence of oxygen vacancies and external stress on the ferroelectric characteristics of Al-doped HfO2 (HfAlO)....
The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene f...
The discovery of ferroelectricity in HfO2-based materials in 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf0.5Zr0.5O2 (HZO) films, it is possible to obtain homogenous thin films with satisfactory...
The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes o...
Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very pr...
Data movement has become a dominant bottleneck in modern artificial intelligence hardware, making in-memory computing a critical direction for energy-efficient and memory-centric architectures. Ferroelectric hafnium oxide provides a distinctive mater...
Ferroelectric (FE) Hf1−xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally chara...
HfO2-based ferroelectrics have extended a familiar CMOS high-κ dielectric into a materials platform for nonvolatile memory, low-power logic, and in-memory hardware. This review examines thickness engineering in hafnia, especially Hf0.5Zr0.5O2 (...
This study analyzed the low-frequency noise characteristics of nanosheet field-effect transistors (NSFETs) using technology computer-aided design (TCAD) simulations. In particular, the effects of shallow trench isolation (STI) depth and gate–in...
Recently, considerable attention has been paid to the development of advanced technologies such as artificial intelligence (AI) and big data, and high-density, high-speed storage devices are being extensively studied to realize the technology. Ferroe...
Ferroelectric materials have received significant attention as next-generation materials for gates in transistors because of their negative differential capacitance. Emerging transistors, such as the negative capacitance field effect transistor (NCFE...
Pyroelectric infrared sensors are often based on lead-containing materials, which are harmful to the environment and subject to governmental restrictions. Ferroelectric Hf1−xZrxO2 thin films offer an environmentally friendly alternative. Additionally...
Emerging non-volatile memories based on ferroelectric materials are currently under development to be integrated in the back-end-of-line of advanced complementary metal-oxide-semiconductor (CMOS) nodes. A life cycle assessment (LCA) over 16 impact ca...
Energy storage efficiency (η) and large recoverable energy density (Wre) are necessary for antiferroelectric materials in order to develop antiferroelectric-based dielectric capacitors with exceptional energy storage capacity. In the present pape...
The nanosecond speed of information writing and reading is recognized as one of the main advantages of next-generation non-volatile ferroelectric memory based on hafnium oxide thin films. However, the kinetics of polarization switching in this materi...
Based on the excellent performance of the K(Ta0.5Nb0.5)O3 (KTN) system, this study systematically investigated the mechanism of the influence of metal element (Cd, Sn, Hf) doping on the photocatalytic performance of KTN ferroelectric materials using...