Ferroelectric Materials, Devices and Applications
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".
Deadline for manuscript submissions: 30 June 2026 | Viewed by 541
Special Issue Editors
2. Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China
Interests: hafnium oxides; ferroelectric materials; field-effect transistors; memory
Interests: nanogenerator; piezotronics; piezoelectric; sensor; ferroelectric
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Ferroelectric materials exhibit spontaneous polarization under an external electric field, which can be reversibly switched by changing the applied voltage. This unique property, among others, makes them highly attractive in a wide range of electronic and sensing applications. Since the initial discovery of ferroelectricity in Rochelle salt, research on ferroelectric materials has continuously evolved—from traditional perovskite oxides to emerging systems such as doped hafnia (HfO2), aluminum–scandium nitride (AlxSc1−xN), and two-dimensional materials. These advances provide new solutions to scalability and CMOS compatibility challenges, leading to renewed interest in ferroelectric-based devices such as FeRAMs, FeFETs, negative-capacitance transistors, and neuromorphic synaptic devices.
This Special Issue aims to provide an overview of recent advances and future perspectives in ferroelectric materials, devices, and applications. We welcome original research and review papers on topics including novel ferroelectric materials, nanostructures, heterostructures, interfaces, and domain engineering, as well as the integration of ferroelectric materials with other functional materials.
We warmly invite researchers to contribute their latest findings to this Special Issue in order to advance this exciting field.
Dr. Huan Liu
Prof. Dr. Rusen Yang
Guest Editors
Manuscript Submission Information
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Keywords
- ferroelectric
- FeRAM
- FeFET
- memory
- electro-optical
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