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22 Results Found

  • Article
  • Open Access
2 Citations
1,672 Views
13 Pages

High-Temperature Annealing of Random Telegraph Noise in a Stacked CMOS Image Sensor After Hot-Carrier Stress

  • Calvin Yi-Ping Chao,
  • Thomas Meng-Hsiu Wu,
  • Charles Chih-Min Liu,
  • Shang-Fu Yeh and ,
  • Chih-Lin Lee,
  • Honyih Tu,
  • Zhong-Da Wu,
  • Joey Chiao-Yi Huang and
  • Chin-Hao Chang
  • + 4 authors+ 0 author

2 January 2026

This paper studies the temperature effects on device aging, particularly the random telegraph noise (RTN) degradation and the threshold voltage (Vt) shift in a stacked CMOS image sensor (CIS) caused by hot-carrier stress (HCS). Measurements indicate...

(This article belongs to the Special Issue Special Issue on the 2025 International Image Sensor Workshop (IISW2025))
  • Proceeding Paper
  • Open Access
3,988 Views
4 Pages

A Combined Temperature and Stress Sensor in 0.18 μm CMOS Technology

  • Samuel Huber,
  • Samuel François and
  • Oliver Paul

This paper presents a solution for on-chip temperature and mechanical stress measurement in CMOS integrated circuits. Thereby both temperature and stress sensors are realized as resistive Wheatstone bridges. By design, both sensors show outputs affec...

(This article belongs to the Proceedings of Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017)
  • Article
  • Open Access
7 Citations
4,842 Views
14 Pages

Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor

  • Calvin Yi-Ping Chao,
  • Thomas Meng-Hsiu Wu,
  • Shang-Fu Yeh,
  • Chih-Lin Lee and ,
  • Honyih Tu,
  • Joey Chiao-Yi Huang and
  • Chin-Hao Chang
  • + 2 authors+ 0 author

18 September 2023

In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the signifi...

(This article belongs to the Special Issue Special Issue on the 2023 International Image Sensor Workshop (IISW2023))
  • Article
  • Open Access
16 Citations
8,682 Views
10 Pages

Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection

  • Satoshi Maruyama,
  • Takeshi Hizawa,
  • Kazuhiro Takahashi and
  • Kazuaki Sawada

5 January 2018

We developed a Fabry–Perot interferometer sensor with a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for chemical sensing. The novel signal transducing technique was performed in three steps: mechanical deflection, transmittance...

(This article belongs to the Section Physical Sensors)
  • Article
  • Open Access
52 Citations
10,631 Views
22 Pages

25 March 2015

The integration of gas sensor components into smart phones, tablets and wrist watches will revolutionize the environmental health and safety industry by providing individuals the ability to detect harmful chemicals and pollutants in the environment u...

(This article belongs to the Special Issue Smart Materials for Switchable Sensors)
  • Proceeding Paper
  • Open Access
1 Citations
3,230 Views
4 Pages

Fabrication of Planar Copper Microcoils for Telemetric Orthodontic Applications

  • Julian Hafner,
  • Matthias Kuhl,
  • Michael Schwaerzle,
  • Thorsten Hehn and ,
  • Daniel Rossbach and
  • Oliver Paul
  • + 1 author+ 0 author

The fabrication of electroplated planar copper microcoils for telemetric orthodontic applications is presented. A set of microcoils with overall dimensions of 2 × 2.5 × 0.5 mm3, track widths down to 5 μm and turn numbers up to 35 were fabricated on g...

(This article belongs to the Proceedings of Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017)
  • Proceeding Paper
  • Open Access
5 Citations
2,382 Views
4 Pages

For the first time, 3D multiphysics finite element modelling has been used to optimise the geometry of a calorimetric thermal flow sensor. The model involves and couples three physics domains: electric, thermal and fluid mechanics. The model is valid...

(This article belongs to the Proceedings of Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017)
  • Article
  • Open Access
6 Citations
9,525 Views
15 Pages

2 May 2017

Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current....

(This article belongs to the Special Issue MEMS and Nano-Sensors)
  • Feature Paper
  • Article
  • Open Access
19 Citations
7,332 Views
15 Pages

A Scalable and Low Stress Post-CMOS Processing Technique for Implantable Microsensors

  • Ah-Hyoung Lee,
  • Jihun Lee,
  • Farah Laiwalla,
  • Vincent Leung and ,
  • Jiannan Huang,
  • Arto Nurmikko and
  • Yoon-Kyu Song
  • + 2 authors+ 0 author

5 October 2020

Implantable active electronic microchips are being developed as multinode in-body sensors and actuators. There is a need to develop high throughput microfabrication techniques applicable to complementary metal–oxide–semiconductor (CMOS)-based silicon...

(This article belongs to the Section B: Biology and Biomedicine)
  • Article
  • Open Access
1 Citations
2,988 Views
18 Pages

Transfer of Tactile Sensors Using Stiction Effect Temporary Handling

  • Peng Zhong,
  • Ke Sun,
  • Chaoyue Zheng,
  • Heng Yang and
  • Xinxin Li

29 October 2021

A novel method for transfer of tactile sensors using stiction effect temporary handling (SETH) is presented to simplify the microelectromechanical-system (MEMS)/CMOS integration process, improve the process reliability and electrical performance, and...

(This article belongs to the Special Issue Design and Fabrication of Micro/Nano Sensors and Actuators)
  • Article
  • Open Access
8 Citations
3,285 Views
10 Pages

27 February 2024

High-energy radiation is known to potentially impact the optical performance of silicon-based sensors adversely. Nevertheless, a proper characterization and quantification of possible spectral response degradation effects due to UV stress is technica...

(This article belongs to the Special Issue Eurosensors 2023 Selected Papers)
  • Article
  • Open Access
3 Citations
5,672 Views
13 Pages

14 May 2020

In this paper, a Micro-Electro-Mechanical Systems (MEMS) calorimetric sensor with its measurement electronics is designed, fabricated, and tested. The idea is to apply a configurable voltage to the sensitive resistor and measure the current flowing t...

(This article belongs to the Section Electrical, Electronics and Communications Engineering)
  • Article
  • Open Access
19 Citations
3,731 Views
11 Pages

8 December 2020

Detecting the concentration of Pb2+ ions is important for monitoring the quality of water due to it can become a health threat as being in certain level. In this study, we report a nanomechanical Pb2+ sensor by employing the complementary metal-oxide...

(This article belongs to the Special Issue Nanomechanical and Optical Biosensors)
  • Article
  • Open Access
2 Citations
3,412 Views
13 Pages

Thermal Damage Characterization of Detector Induced by Nanosecond Pulsed Laser Irradiation

  • Zhilong Jian,
  • Weijing Zhou,
  • Hao Chang,
  • Yingjie Ma and ,
  • Xiaoyuan Quan and
  • Zikang Wang
  • + 1 author+ 0 author

Experimental and simulation analysis was conducted on the effects of 532 nm nanosecond laser-induced thermal damage on the front-side illuminated CMOS detector. The study examined CMOS detector output images at different stages of damage, including p...

(This article belongs to the Section Lasers, Light Sources and Sensors)
  • Article
  • Open Access
37 Citations
7,123 Views
14 Pages

An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance

  • Zebin Xu,
  • Jiahui Yan,
  • Meilin Ji,
  • Yongxin Zhou and ,
  • Dandan Wang,
  • Yuanzhi Wang,
  • Zhihong Mai,
  • Xuefeng Zhao,
  • Tianxiang Nan and
  • Songsong Zhang
  • + 6 authors+ 1 author

17 December 2022

This paper presents a piezoresistive differential pressure sensor based on a silicon-on-insulator (SOI) structure for low pressure detection from 0 to 30 kPa. In the design phase, the stress distribution on the sensing membrane surface is simulated,...

(This article belongs to the Special Issue Design, Fabrication, Testing of MEMS/NEMS)
  • Article
  • Open Access
549 Views
14 Pages

A low-cost, high-robust, high-gain preamplifier is fabricated in a 65 nm CMOS for Hall sensors. A semi-open loop that combines an optimized differential–difference amplifier with a simplified open-loop amplifier is proposed to achieve stringent...

(This article belongs to the Special Issue Innovations in Digital and Analog Electronic Systems for Next-Generation Devices: 2nd Edition)
  • Article
  • Open Access
3 Citations
3,707 Views
21 Pages

17 March 2022

With the application of four optical CMOS sensors, it was possible to capture the trajectory of an endoscopic tool during an in vitro surgical experiment on a cardiovascular preparation. This was due to the possibility of obtaining a path when a refl...

(This article belongs to the Special Issue Medical Sensors)
  • Article
  • Open Access
5 Citations
7,490 Views
14 Pages

Sensing Optimum in the Raw: Leveraging the Raw-Data Imaging Capabilities of Raspberry Pi for Diagnostics Applications

  • Alessandro Tonelli,
  • Veronica Mangia,
  • Alessandro Candiani,
  • Francesco Pasquali and ,
  • Tiziana Jessica Mangiaracina,
  • Alessandro Grazioli,
  • Michele Sozzi,
  • Davide Gorni,
  • Simona Bussolati and
  • Stefano Selleri
  • + 7 authors+ 2 authors

20 May 2021

Single-board computers (SBCs) and microcontroller boards (MCBs) are extensively used nowadays as prototyping platforms to accomplish innovative tasks. Very recently, implementations of these devices for diagnostics applications are rapidly gaining gr...

(This article belongs to the Special Issue Feature Papers in Physical Sensors Section 2020)
  • Article
  • Open Access
17 Citations
11,850 Views
12 Pages

Cost-Efficient Wafer-Level Capping for MEMS and Imaging Sensors by Adhesive Wafer Bonding

  • Simon J. Bleiker,
  • Maaike M. Visser Taklo,
  • Nicolas Lietaer,
  • Andreas Vogl and ,
  • Thor Bakke and
  • Frank Niklaus
  • + 1 author+ 0 author

18 October 2016

Device encapsulation and packaging often constitutes a substantial part of the fabrication cost of micro electro-mechanical systems (MEMS) transducers and imaging sensor devices. In this paper, we propose a simple and cost-effective wafer-level cappi...

(This article belongs to the Special Issue 3D Integration Technologies for MEMS)
  • Article
  • Open Access
40 Citations
12,999 Views
26 Pages

Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

  • Jiahong Zhang,
  • Jianxiang Chen,
  • Min Li,
  • Yixian Ge and ,
  • Tingting Wang,
  • Peng Shan and
  • Xiaoli Mao
  • + 2 authors+ 0 author

28 February 2018

To meet the radiosonde requirement of high sensitivity and linearity, this study designs and implements a monolithically integrated array-type piezoresistive intelligent pressure sensor system which is made up of two groups of four pressure sensors w...

  • Article
  • Open Access
2 Citations
2,062 Views
24 Pages

18 March 2024

The surgical robots currently used in cardiac surgery are equipped with a remote center of motion (RCM) mechanism that enables the required spherical workspace. The dynamics model of the surgical robot’s RCM mechanism presented in this work inc...

(This article belongs to the Special Issue Applications of Robotics in Disease Treatment and Rehabilitation)
  • Review
  • Open Access
613 Views
28 Pages

Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films and Heterostructures: Mechanisms and Applications

  • Sanjie Liu,
  • Zilong Zeng,
  • Yongyong Cao,
  • Zhenyi Deng and ,
  • Xinjie Li,
  • Zixin Liang,
  • Rongjie Feng,
  • Jiaping Long,
  • Yu Liu and
  • Xinhe Zheng
  • + 6 authors+ 1 author

8 August 2026

Group III-nitride semiconductors (GaN, AlN, InN) serve as foundational materials for modern optoelectronics, high-frequency microelectronics, and next-generation energy harvesting devices. However, traditional high-temperature epitaxy (>700 °C...

(This article belongs to the Special Issue Advances in Wide Bandgap Semiconductor Materials)