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Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection

1
AIST-TUT Advanced Sensor Collaborative Research Laboratory, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
2
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
3
Electronics Inspired-Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
4
JST Precursory Research for Embryonic Science and Technology (PRESTO), Tokyo 102-0076, Japan
*
Author to whom correspondence should be addressed.
Sensors 2018, 18(1), 138; https://doi.org/10.3390/s18010138
Received: 20 December 2017 / Revised: 1 January 2018 / Accepted: 3 January 2018 / Published: 5 January 2018
(This article belongs to the Section Physical Sensors)
We developed a Fabry–Perot interferometer sensor with a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for chemical sensing. The novel signal transducing technique was performed in three steps: mechanical deflection, transmittance change, and photocurrent change. A small readout photocurrent was processed by an integrated source follower circuit. The movable film of the sensor was a 350-nm-thick polychloro-para-xylylene membrane with a diameter of 100 µm and an air gap of 300 nm. The linearity of the integrated source follower circuit was obtained. We demonstrated a gas response using 80-ppm ethanol detected by small membrane deformation of 50 nm, which resulted in an output-voltage change with the proposed high-efficiency transduction. View Full-Text
Keywords: Fabry–Perot interference; microelectromechanical systems (MEMS); complementary metal oxide semiconductor (CMOS) Fabry–Perot interference; microelectromechanical systems (MEMS); complementary metal oxide semiconductor (CMOS)
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MDPI and ACS Style

Maruyama, S.; Hizawa, T.; Takahashi, K.; Sawada, K. Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection. Sensors 2018, 18, 138. https://doi.org/10.3390/s18010138

AMA Style

Maruyama S, Hizawa T, Takahashi K, Sawada K. Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection. Sensors. 2018; 18(1):138. https://doi.org/10.3390/s18010138

Chicago/Turabian Style

Maruyama, Satoshi, Takeshi Hizawa, Kazuhiro Takahashi, and Kazuaki Sawada. 2018. "Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection" Sensors 18, no. 1: 138. https://doi.org/10.3390/s18010138

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