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Proceedings 2017, 1(4), 340;

A Combined Temperature and Stress Sensor in 0.18 μm CMOS Technology

Melexis Technologies SA, Chemin de Buchaux 38, 2022 Bevaix, Switzerland
Department of Microsystems Engineering (IMTEK), University of Freiburg, Germany
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
Author to whom correspondence should be addressed.
Published: 8 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
PDF [676 KB, uploaded 4 September 2017]


This paper presents a solution for on-chip temperature and mechanical stress measurement in CMOS integrated circuits. Thereby both temperature and stress sensors are realized as resistive Wheatstone bridges. By design, both sensors show outputs affected by non-linearities and parasitic cross-sensitivities. The novelty presented in this work is to combine both non-ideal sensor outputs by applying a two-dimensional Newton-Raphson method to extract the actual values of temperature and mechanical stress which were obtained with errors of less than 0.5 K and 0.5 MPa.
Keywords: temperature sensor; stress sensor; cross-sensitivity; multisensor system temperature sensor; stress sensor; cross-sensitivity; multisensor system
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Huber, S.; François, S.; Paul, O. A Combined Temperature and Stress Sensor in 0.18 μm CMOS Technology. Proceedings 2017, 1, 340.

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