To address the issues of insufficient responsivity and low imaging contrast of carbon-based HGFET high-sensitivity short-wave infrared (SWIR) detectors under low-light conditions, this paper proposes a high-sensitivity and high-contrast image enhance...
In this study, we explore the integration of a cost-effective triboelectric nanogenerator (TENG) with an large silicon PIN detector (diameter: 12 mm) for intelligent wireless recognition applications. Wireless communication eliminates the need for ph...
This work examines a cylindrical FE-DE heterostructure and compares its performance with that of a cylindrical FE-FE-DE heterostructure. It aims to maximize voltage amplification, increase capacitance, and attain a constant negative capacitance. Firs...
Multiferroic composites of xNi0.8Zn0.2Fe2O4/(1 − x)BaTiO3 (x = 0, 0.1, 0.3, 0.5, labeled NZFO/BTO) with ~100 nm particle size were synthesized via high-energy ball milling and thermal annealing. The X-ray diffraction shows a co-existence of the...
The rapid development of electronic devices has led to increasing requirements for higher-performance thermal interface materials (TIMs). Based on the finite element method, this study investigates the heat transfer enhancement mechanism of polymer-b...
A new and transformative era in semiconductor packaging is underway, wherein, there is a shift from transistor scaling to system scaling and integration through advanced packaging. For advanced packaging, interconnect scaling is a key driver, with in...
In the post-Moore era, carbon nanotube field-effect transistors (CNTFETs) are a promising alternative to complementary metal-oxide-semiconductor (CMOS) technology at and below the 5 nm node. Compact models bridge circuit design and device physics, ye...
Triboelectric materials can convert irregular mechanical stimuli from human motion or environmental sources into high surface charge densities and instantaneous electrical outputs. Their intrinsic properties, such as flexibility, stretchability, chem...
In metal nanoparticles, localized surface plasmon resonance occurs due to the interaction between electrons on the surface and light. Among them, aluminum (Al) nanoparticles are known to have a resonant absorption wavelength in the ultraviolet light...
In this paper, the impact of SiN passivation on dynamic-RON degradation of AlGaN/GaN HEMTs devices is put in evidence. To this end, samples showing different SiN passivation stoichiometry are considered, labeled as Sample A and Sample B. For dynamic-...
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