902 Results Found

Flux calibrations in multi-source thermal co-evaporation of thin films have been developed based on real-time spectroscopic ellipsometry (RTSE) measurements. This methodology has been applied to fabricate CuInSe2 (CIS) thin film photovoltaic (PV) abs...

Growing high-quality Si films at high rates with thicknesses ranging from the few nm- to µm-range while keeping the material consumption at a minimum is important for a wide range of Si-based technologies, spanning from batteries to sensors and...

This study investigates the impact of vapour-phase precursor flow rates—specifically those of trimethylaluminum (TMA) and deionized water (H2O)—on the deposition of aluminum oxide (Al2O3) thin films through atomic layer deposition (ALD)....

The intricate geological characteristics of tight oil reservoirs, characterized by extremely low porosity and permeability as well as pronounced heterogeneity, have led to a decline in reservoir pressure, substantial gas expulsion, an accelerated dec...

Dense homogeneous nanocomposite TiSiCN coatings with a thickness of up to 15 microns and a hardness of up to 42 GPa were obtained by the method of reactive titanium evaporation in a hollow cathode arc discharge in an Ar + C2H2 + N2-gas mixture with t...

The pure elements Ti, Zr, Cr, Nb were selected to produce an TiCrZrNb alloy target and deposited thin films thereof by a reactive high vacuum DC sputtering process. Nitrogen was used as the reactive gas to deposit the nitride thin films. The effect o...

Boron as thin film material is of relevance for use in modern micro- and nano-fabrication technology. In this research boron thin films are realized by a number of physical and chemical deposition methods, including magnetron sputtering, electron-bea...

The wetting behavior of ionic liquids (ILs) on the mesoscopic scale considerably impacts a wide range of scientific fields and technologies. Particularly under vacuum conditions, these materials exhibit unique characteristics. This work explores the...

In view of the demand for high-quality thermal neutron detectors, boron films have recently attracted widespread research interest because of their special properties. In this work, we report on the deposition of boron films on silicon substrates by...

In order to study the effect of groove parameters on solid particles’ deposition in mechanical face seal lubrication film, a multi-phase flow calculation model for the sealing micro-gap lubricating film was established based on the Laminar model, mix...

The polylactic acid (PLA) resin Ingeo 4032D was selected as the research object, with a focus on PLA modification by using polymers such as linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE) and ethylene–propylene-diene m...

AlN is a wide band gap semiconductor that is of growing industrial interest due to its piezoelectric properties, high breakdown voltage and thermal conductivity. Using magnetron sputtering to grow AlN thin films allows for high deposition rates and u...

Nanocrystalline diamond (NCD) films are attractive for many applications due to their smooth surfaces while holding the properties of diamond. However, their growth rate is generally low using common Ar/CH4 with or without H2 chemistry and strongly d...

The demand for ultra-tight encapsulation solutions with excellent barrier and high conformality properties has increased in recent years. To meet these challenges, thin-film barrier coatings have emerged as a promising solution. In this study, we inv...

The improvement in ALD growth rate has always been challenging due to its slow atomic-scale depositions. Although Al2O3 ALD is one of the most widely used ALD processes, the effects of its process parameters on growth rate have not been systematicall...

The combined effect on the variation of the in-situ deposition temperature and the variation of the applied power on the deposition rate (DR), gap energy (Eg), and resistivity (ρ) in barium strontium titanate thin films, deposited into RF (radio freq...

In this study, pairs of the organosilicon/silicon oxynitride (SiOxNy) barrier structures with an ultralow water vapor transmittance rate (WVTR) were consecutively prepared by the plasma-enhanced chemical vapor deposition at a low temperature of 70 &d...

Three titanium (Ti) targets with different purities were used to prepare Ti films on polyimide substrates by DC magnetron sputtering. The microstructures of Ti films were characterized by a metallographic microscope, X-ray diffractometer, field emiss...

Aerosol deposition (AD) is a simple, dry raw-powder deposition process in which the targeted film is formed by direct bombardment of accelerated starting powder onto the substrate surface at room temperature. Despite the increased interest in AD film...

Tunnel oxide passivating contact cells have become the mainstream form of high-performance photovoltaic cells; however, the key factor restricting the further improvement of tunnel oxide passivating contact cell performance lies in the deposition pro...

A plasma system attached with one internal coil (for generating inductively coupled plasma) and two sputtering carbon targets was set up to deposit PP-MMA (plasma polymerized methyl methacrylate) thin films. PP-MMA was used as a model material in the...

In this paper we investigate influence of radio frequency plasma enhanced chemical vapor deposition (RF PECVD) process parameters, which include gas flows, pressure and temperature, as well as a way of sample placement in the reactor, on optical prop...

This study investigated the effect of purge gas flow rate and purge gas flow time on the properties of TiN thin films via chemical reaction simulation and the plasma-enhanced atomic layer deposition (PEALD) process along purge gas flow rates and time...

This paper investigates the influence of C2H2 flow rates on the optical properties, surface roughness, and residual stress of Ti/WC thin films deposited on glass substrates. A range of Ti/WC thin films with varying carbon contents were prepared using...

This paper reports on the deposition and characterization of piezoelectric AlXSc1-XN (further: AlScN) films on Si substrates using AlSc alloy targets with 30 at.% Sc. Films were deposited on a Ø200 mm area with deposition rates of 200 nm/min u...

This study examines the impact of varying oxygen flow rates on the properties of Cu2O thin films deposited via radio frequency (RF) magnetron sputtering. X-ray diffraction (XRD) analysis showed a phase transition from cubic Cu2O to a mixed Cu2O and C...

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure,...

The deposition rates of protective coatings resembling polydimethylsiloxane (PDMS) were measured with numerous sensors placed at different positions on the walls of a plasma-enhanced chemical vapor deposition (PECVD) reactor with a volume of approxim...

Organic thin films with smooth surfaces are mandated for high-performance organic electronic devices. Abrupt nucleation and aggregation during film formation are two main factors that forbid smooth surfaces. Here, we report a simple fast cooling (FC)...

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS),...

In this study, boron-doped diamond (BDD) film was deposited by hot-filament chemical vapor deposition (HFCVD) using acetone as the carbon source and trimethyl borate (TMB) as the boron source with the aim of lowering the manufacturing cost of BDD ele...

Environmentally-safe high-power impulse magnetron sputtering (HiPIMS) technology was utilized to deposit chromium films. This research focused on the influences of the HiPIMS pulse widths on the microstructure of films deposited at different depositi...

The morphology of aluminum co-doped scandium stabilized zirconia (ScAlSZ) thin films formed by e-beam deposition system was investigated experimentally and theoretically. The dependencies of surface roughness, and the films’ structure on deposi...

In the present study, the AlCoCrNi high-entropy metallic film was deposited on a Si wafer using a magnetron sputtering system. To capture the effects of the sputtering parameters on the microstructure and mechanical properties of the film, the flow r...

Scandia alumina stabilized zirconia (ScAlSZ) thin films were deposited using e-beam evaporation, and the effects of deposition parameters on the structure and chemical composition were investigated. The analysis of thin films was carried out using En...

Before depositing a thin film, modifying the substrate surface was a crucial step in the film preparation process, having a decisive impact on the final properties of the film. In addition to additive methods such as preparing transition layers, subt...

Yttrium oxide (Y2O3) films have been widely used as protective layers in plasma etching equipment, but achieving stoichiometric films with high deposition rates remains a challenge. In this study, Y2O3 films were fabricated by a medium-frequency reac...

In this paper, a parametric three-dimensional (3D) phase-field study of the physical vapor deposition process of metal thin films was performed aiming at quantitative simulations. The effect of deposition rate and model parameters on the microstructu...

High Power Impulse Magnetron Sputtering (HiPIMS) has generated a great deal of interest by offering significant advantages such as high target ionization rate, high plasma density, and the smooth surface of the sputtered films. This study discusses t...

Diamond films were deposited on silicon nitride (Si3N4) substrates with three different roughnesses using the method of hot-filament chemical vapor deposition (HFCVD). The tribological properties of the film were studied by changing the deposition ti...

Amorphous carbon hard mask (ACHM) films are widely used as etching hard masks in 3D-NAND flash memory, which has put forward higher requirements in the film deposition rate, film transparency, uniformity, and selective etching. In this work, the ACHM...

In this paper, the analysis of silicon oxynitride (SiON) films, deposited utilizing the plasma enhanced chemical vapor deposition (PECVD) process, for optical waveguides on silicon wafers is presented. The impact of N2O flow rate on various SiON film...

TiW thin films with superior surface properties were deposited at room temperature using RF magnetron sputtering under low-temperature process conditions. The correlation between bulk plasma characteristics and thin-film properties was investigated a...

Pentacene is a well-known conjugated organic molecule with high mobility and a sensitive photo response. It is widely used in electronic devices, such as in organic thin-film transistors (OTFTs), organic light-emitting diodes (OLEDs), photodetectors,...

A comparison was performed between Co-Ni thin films and template-assisted nanowires arrays obtained by electrochemical co-deposition. To reduce the effects of anomalous deposition and increase the Ni content in the deposit, an electrolyte with three...

Highly bismuth-substituted iron garnet thin films are prepared on quartz substrates by using a radio frequency (RF) magnetron sputtering technique. We study the factors (process parameters associated with the RF magnetron sputter deposition technique...

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition tempe...

In this work, thin films of lamellar clays were deposited by laser techniques (matrix assisted pulsed laser evaporation (MAPLE) and pulsed laser deposition (PLD)). The focus of this paper is the optimization of deposition parameters for the productio...

AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y2O3 films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare t...

Hafnium oxide (HfOx) films have a wide range of applications in solid-state devices, including metal–oxide–semiconductor field-effect transistors (MOSFETs). The growth of HfOx films from the metal precursor tetrakis(ethylmethylamino) hafn...