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Open AccessArticle

High Performance Multilayered Organosilicon/Silicon Oxynitride Water Barrier Structure Consecutively Deposited by Plasma-Enhanced Chemical Vapor Deposition at a Low-Temperature

1
Institute of Electro-Optical and Material Science, National Formosa University, Yunlin 640, Taiwan
2
Research and Development Center, Creating Nano Technologies, Tainan 700, Taiwan
3
Additive Manufacturing and Laser Application, Industrial Technology Research Institute, Tainan 700, Taiwan
*
Author to whom correspondence should be addressed.
Coatings 2020, 10(1), 11; https://doi.org/10.3390/coatings10010011
Received: 24 November 2019 / Revised: 18 December 2019 / Accepted: 19 December 2019 / Published: 21 December 2019
(This article belongs to the Special Issue Selected Papers from IIKII 2019 Conferences)
In this study, pairs of the organosilicon/silicon oxynitride (SiOxNy) barrier structures with an ultralow water vapor transmittance rate (WVTR) were consecutively prepared by the plasma-enhanced chemical vapor deposition at a low temperature of 70 °C using the tetramethylsilane (TMS) monomer and the TMS-oxygen-ammonia gas mixture, respectively. The thickness of the SiOxNy film in the barrier structure was firstly designed by optimizing its effective permeability. The WVTR was further decreased by inserting an adequate thickness of the organosilicon layer as the stress residing in the barrier structure was released accordingly. By prolonging the diffusion pathway for water vapor permeation, three-paired organosilicon/SiOxNy multilayered barrier structure with a WVTR of about 10−5 g/m2/day was achievable for meeting the requirement of the thin film encapsulation on the organic light emitting diode. View Full-Text
Keywords: organosilicon/silicon oxynitride barrier structure; water vapor transmittance rate; plasma-enhanced chemical vapor deposition; tetramethylsilane; thin film encapsulation organosilicon/silicon oxynitride barrier structure; water vapor transmittance rate; plasma-enhanced chemical vapor deposition; tetramethylsilane; thin film encapsulation
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Fu, R.-D.; Chang, C.K.; Chuang, M.-Y.; Chen, T.-H.; Lu, S.-K.; Liu, D.-S. High Performance Multilayered Organosilicon/Silicon Oxynitride Water Barrier Structure Consecutively Deposited by Plasma-Enhanced Chemical Vapor Deposition at a Low-Temperature. Coatings 2020, 10, 11.

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