Special Issue "Advanced Materials on Electrical and Mechanical Application"

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (31 March 2020).

Special Issue Editors

Prof. Dr. Teen­-Hang Meen
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Guest Editor
Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan
Interests: photovoltaic device; dye-sensitized solar cells; nanotechnology
Special Issues and Collections in MDPI journals
Prof. Dr. Wenbing Zhao
Website
Guest Editor
Department of Electrical Engineering and Computer Science, Cleveland State University, Ohio, 44011, USA
Interests: human computer interaction; rehabilitation; computer vision; distributed systems
Special Issues and Collections in MDPI journals
Prof. Dr. Cheng-Fu Yang

Guest Editor

Special Issue Information

Dear Colleagues,

Scientists all over the world actively want to discover new advanced materials in electrical and mechanical engineering. In recent years, applications of advanced materials have increased in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. Therefore, the fields of electrical and mechanical materials have been subjects of review. They not only encompass material sizes at the nanoscale, but also in various dimensions where the onset of size dependent phenomena usually enables novel applications. This Special Issue "Advanced Materials on Electrical and Mechanical Application" covers the following scopes: fundamental and advanced materials of electrical and mechanical engineering; their synthesis and engineering; their application on optical sensors, magnetic, acoustic, and thermal transduction; their integration with many elements; the design of electrical or mechanical devices; the evaluation of various performances; and the exploration of their broad applications in industry, environmental control, material analysis, etc. We invite investigators to contribute original research articles, as well as review articles, to this Special Issue.

In addition, “The 2nd IEEE International Conference on Knowledge Innovation and Invention 2019” (IEEE ICKII 2019) which is organized by our institution will be held in Seoul, South Korea on 12–15 July 2019. The authors of the papers that will be presented at IEEE ICKII 2019 about the topics are invited to submit their extended versions to this Special Issue after the conference. Submitted papers should be extended to the size of regular research or review articles, with at least a 50% extension of new results.

The potential topics include, but are not limited to, the following:

  • Developments of advanced materials for new electrical and optical properties;
  • Nanomaterials for preparation and applications;
  • Combinatorial methods of advanced materials for mechanical design and optimization;
  • Advanced materials for preparation and applications;
  • Subjects related to electronic thin films and coating technology;
  • Synthesis engineering of advanced materials;
  • Advanced materials in mechatronics.

Schedule:

Manuscript Due: 30 November 2019
First Round of Reviews: 31 December 2019
Second Round of Reviews: 31 January 2020
Acceptance of Final papers and Publication: 31 March 2020

Prof. Dr. Teen­Hang Meen
Prof. Dr. Wenbing Zhao
Prof. Dr. Cheng-Fu Yang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (2 papers)

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Research

Open AccessArticle
Study of the Structure, Electronic and Optical Properties of BiOI/Rutile-TiO2 Heterojunction by the First-Principle Calculation
Materials 2020, 13(2), 323; https://doi.org/10.3390/ma13020323 - 10 Jan 2020
Cited by 1
Abstract
Using the first-principle calculation that is based on the density functional theory (DFT), our group gains some insights of the structural, electronic and optical properties of two brand new types of BiOI/TiO2 heterojunctions: 1I-terminated BiOI {001} surface/TiO2 (1I-BiOI/TiO2) and [...] Read more.
Using the first-principle calculation that is based on the density functional theory (DFT), our group gains some insights of the structural, electronic and optical properties of two brand new types of BiOI/TiO2 heterojunctions: 1I-terminated BiOI {001} surface/TiO2 (1I-BiOI/TiO2) and BiO-terminated BiOI {001} surface/TiO2 (BiO-BiOI/TiO2). The calculation illustrates that BiOI/TiO2 heterojunction has excellent mechanical stability, and it shows that there is a great possibility for the BiOI/TiO2 heterojunction to be used in visible-light range, hence the photocatalytic ability can be enhanced dramatically. Especially, from the calculation, we discovered that there are two specific properties: the band-gap of 1I-BiOI/TiO2 heterojunction reduces to 0.28 eV, and the BiO-BiOI/TiO2 semiconductor material changes to n-type. The calculated band offset (BOs) for 1I-BiOI/TiO2 heterojunction indicates that the interfacial structure contributes a lot to a suitable band alignment which can disperse the photo-generated carriers into the opposite sides of the interface, so this could effectively weaken the electron-hole recombination. Meanwhile, the built-in potential around the interface accelerates the movement of the photo-generated electron-hole pairs. We believe this is the reason that the BiOI/TiO2 material shows perfect photocatalytic performance. This paper can provide theoretical support for the related research, especially the further research of the BiOI-based material. Full article
(This article belongs to the Special Issue Advanced Materials on Electrical and Mechanical Application)
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Open AccessArticle
Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms
Materials 2019, 12(16), 2601; https://doi.org/10.3390/ma12162601 - 15 Aug 2019
Cited by 4
Abstract
The silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) suffer intensive self-heating effects due to the reduced thermal conductivity of the silicon layer while the feature sizes of devices scale down to the nanometer regime. In this work, analytical models of thermal conductivity considering the [...] Read more.
The silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) suffer intensive self-heating effects due to the reduced thermal conductivity of the silicon layer while the feature sizes of devices scale down to the nanometer regime. In this work, analytical models of thermal conductivity considering the self-heating effect (SHE) in ultra-thin body fully depleted (UTB-FD) SOI MOSFETs are presented to investigate the influences of impurity, free and bound electrons, and boundary reflection effects on heat diffusion mechanisms. The thermal conductivities of thin silicon films with different parameters, including temperature, depth, thickness and doping concentration, are discussed in detail. The results show that the thermal dissipation associated with the impurity, the free and bound electrons, and especially the boundary reflection effects varying with position due to phonon scattering, greatly suppressed the heat loss ability of the nanoscale ultra-thin silicon film. The predictive power of the thermal conductivity model is enhanced for devices with sub-10-nm thickness and a heavily doped silicon layer while considering the boundary scattering contribution. The absence of the impurity, the electron or the boundary scattering leads to the unreliability in the model prediction with a small coefficient of determination. Full article
(This article belongs to the Special Issue Advanced Materials on Electrical and Mechanical Application)
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