- Article
Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes
- Maolin Gao,
- Jing Yang,
- Wei Jia,
- Degang Zhao,
- Guangmei Zhai,
- Hailiang Dong and
- Bingshe Xu
The injection and leakage of charge carriers have a significant impact on the optoelectronic performance of GaN-based lasers. In order to improve the limitation of the laser on charge carriers, a slope-shape hole-barrier layer (HBL) and electron-barr...

