The single crystal 6H-SiC with [0001] crystal direction irradiated by 400 keV He+ ions with 1 × 1017 ions/cm2 fluence at 400 °C were annealed at 600, 900, 1200 and 1400 °C for different durations. The evolution of helium bubbles and discs was investi...
Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key proces...
This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing...
Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are excellent materials for the next generation of high-power and high-frequency electronic devices. In fact, their wide band gap (>3 eV) and high critical electr...
Germanium (Ge) ion implantation into silicon waveguides will induce lattice defects in the silicon, which can eventually change the crystal silicon into amorphous silicon and increase the refractive index from 3.48 to 3.96. A subsequent annealing pro...
β-Ga2O3 is an ultra-wide bandgap semiconductor (Eg~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga2O3 emits light in the UV range that can be tuned to the visible region of the spectrum by rare earth dopants. In...
The effect of post-helium irradiation annealing on bubbles and nanoindentation hardness of two reduced activation ferritic martensitic steels for nuclear fusion applications (EUROFER97 and EU-ODS EUROFER) has been studied. Helium-irradiated EUROFER97...
A novel and promising way for creating nanomaterials based on gallium oxide is the ion synthesis of Ga2O3 nanocrystals in a SiO2/Si dielectric matrix. The properties of nanocrystals are determined by the conditions of ion synthesis—the paramete...
Commercially pure titanium grade II was kinetically nitrided by implanting nitrogen ions with a fluence in the range of (1–9)·1017 cm−2 and ion energy of 90 keV. Post-implantation annealing in the temperature stability range of TiN...
It is well known that ion implantation is one of the basic tools for semiconductor device fabrication. The implantation process itself damages, however, the crystallographic lattice of the semiconductor. Such damage can be removed by proper post-impl...
Complementary metal-oxide-semiconductor (CMOS)-compatible Ar+-implanted Si-waveguide p-i-n photodetectors operating in the mid-infrared (2.2 to 2.3 µm wavelengths) are demonstrated at room temperature. Responsivities exceeding 21 mA/W are measured at...
Rare earth-doped zinc oxide (ZnO:RE) systems are attractive for future optoelectronic devices such as phosphors, displays, and LEDs with emission in the visible spectral range, working even in a radiation-intense environment. The technology of these...
A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO2/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gal...
We present a fundamental study of the erbium luminescence centres in single- and nano-crystalline (NCD) diamonds. Both diamond forms were doped with Er using ion implantation with the energy of 190 keV at fluences up to 5 × 1015 ions·cm&...
The factors that influence the formation of helium blisters in copper were studied, including crystallographic grain orientation and thermomechanical conditions. Helium implantation experiments were conducted at 40 KeV with a dose of 5 × 1017 i...
The super enhancement of silicon band edge luminescence when co-implanted with boron and carbon is reported. The role of boron in the band edge emissions in silicon was investigated by deliberately introducing defects into the lattice structures. We...
This study aims to develop a reference material that enables precise management of dopant distribution in power semiconductors. We thoroughly investigate the structural and surface properties of 4H-silicon carbide (4H-SiC) single crystals implanted w...
3D printing of beta titanium alloys for biomedical applications is currently in great demand, both for material reasons and for the possibility of producing very complex replacements, often directly tailored to the patient. Gyroidal and similar struc...
Polylactic acid (PLA) is a bioresorbable and biocompatible material and is a promising alternative to the current materials used for permanent implants as it has osteosynthesis properties. However, this material has some drawbacks due to its low mech...
This study focuses on the heavily Mg-doped GaN in which the passivation effect of hydrogen and the compensation effect of nitrogen vacancies (VN) impede its further development. To investigate those two factors, H ion implantation followed by thermal...
Laser annealing plays a significant role in the fabrication of scaled-down semiconductor devices by activating dopant ions and rearranging silicon atoms in ion-implanted silicon wafers, thereby improving material properties. Precise temperature contr...
Despite more than two decades of intensive research, ion implantation in group III nitrides is still not established as a routine technique for doping and device processing. The main challenges to overcome are the complex defect accumulation processe...
We explore the wettability modulation induced on alumina (Al2O3) targets by femtosecond laser texturing to demonstrate the stable and durable hydrophilic character of the surface. Specifically, we identify a suitable operational regime to tailor micr...
Poly (vinylidene fluoride) (PVDF) is a kind of semicrystalline organic polymer piezoelectric material. Adopting processes such as melting crystallization and solution casting, and undergoing post-treatment processes such as annealing, stretching, and...
Nitrogen-vacancy (NV) in diamond possesses unique properties for the realization of novel quantum devices. Among the possibilities in the solid state, a NV defect center in diamond stands out for its robustness—its quantum state can be initialized, m...
While light-emitting nanostructures composed of group-IV materials fulfil the mandatory compatibility with CMOS-fabrication methods, factors such as the structural stability of the nanostructures upon thermal annealing, and the ensuing photoluminesce...
FeMn alloys show a great potential for the use as a biodegradable material for medical vascular implants. To optimize the material properties, with respect to the intended application, new fabrication methods also have to be investigated. In this wor...
When developing bone implants, Young’s modulus is one of the primary characteristics of the material that should be considered. This study focuses on regulating the modulus of Ti-50.8 at.% Ni alloy by varying the grain/subgrain size as well as...
Biodegradable metals are a topic of great interest and Fe-based materials are prominent examples. The research task is to find a suitable compromise between mechanical, corrosion, and magnetic properties. For this purpose, investigations regarding al...
We report on the exemplified realization of a digital to physical process chain for a patient individualized osteosynthesis plate for the tarsal bone area. Anonymized patient-specific data of the right feet were captured by computer tomography, which...
Due to the outstanding thermal stability of diamond film, diamond films have extensive application prospects in fields such as electronics, optics, biomedicine, and aerospace, and are one of the important materials driving the development of modern s...
A novel double-impurity doping process for silicon (Si) surfaces was developed, utilizing nanosecond-laser melting of an 11 nm thick gold (Au) top film and a Si wafer substrate in a laser plasma-activated liquid nitrogen (LN) environment. Scanning el...