Electronics, Volume 9, Issue 5 (May 2020) – 178 articles
Cover Story (view full-size image): We have demonstrated the polarization-induced threshold voltage shift in an externally connected ferroelectric-gated field-effect transistor (FeFET) and have proposed a way to understand the operation of synaptic devices. The FeFET was fabricated by connecting a baseline 20 nm FinFET in series to a Pb(Zr0.52Ti0.48)O3 ferroelectric capacitor. As the starting gate voltage (from –4 to –0.5 V) or the ending gate voltage (from +4 to +2 V) is manipulated, the threshold voltage is modulated from 1.66 to 0.87 V or –0.6 to 1.04 V, respectively. This explicitly indicates the conductance modulation in the synaptic device. View this paper.
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