As the physical size of MOSFET has been aggressively scaled-down, the impact of process-induced random variation (RV) should be considered as one of the device design considerations of MOSFET. In this work, an artificial neural network (ANN) model is...
Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affe...
Controlling dimensional fidelity and line-edge roughness is important in chemically amplified negative-tone imaging. In this study, two three-arm random terpolymers containing different acid-labile protecting groups were synthesized via core-first re...
In this paper, we analyze the variability of III-V homojunction tunnel FET (TFET) and FinFET devices and 32-bit carry-lookahead adder (CLA) circuit operating in near-threshold region. The impacts of the most severe intrinsic device variations includ...
We investigate the effects of Line Edge Roughness (LER) of electrode lines on the uniformity of Resistive Random Access Memory (ReRAM) device areas in cross-point architectures. To this end, a modeling approach is implemented based on the generation...
This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used t...
In this study, the impact of the negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated and compared to those of the base...
Extreme ultraviolet lithography (EUVL) is a leading-edge technology for pattern miniaturization and the production of advanced electronic devices. One of the current critical challenges for further scaling down the technology is reducing the line-edg...
Block copolymer (BCP) self-assembly is a promising tool for next generation lithography as microphase separated polymer domains in thin films can act as templates for surface nanopatterning with sub-20 nm features. The replicated patterns can, howeve...
Optical metasurfaces fabricated via electron beam lithography (EBL) are increasingly pivotal for biosensing and bioimaging applications. However, charge accumulation on insulating glass substrates persists as a critical barrier, causing distortion of...
The time-dependent dielectric breakdown (TDDB) degradation mechanism, governed by the synergistic interaction of multiphysics fields, plays a pivotal role in the performance degradation and eventual failure of semiconductor devices and advanced packa...
Enabling extreme ultraviolet lithography (EUVL) as a viable and efficient sub-10 nm patterning tool requires addressing the critical issue of reducing line edge roughness (LER). Stochastic effects from random and local variability in photon distribut...
State of the art three-dimensional atomic force microscopes (3D-AFM) cannot measure three spatial dimensions separately from each other. A 3D-AFM-head with true 3D-probing capabilities is presented in this paper. It detects the so-called 3D-Nanoprobe...