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Molecular Modeling of EUV Photoresist Revealing the Effect of Chain Conformation on Line-Edge Roughness Formation

1
Department of Polymer Engineering, Graduate School, Chonnam National University, Gwangju 61186, Korea
2
School of Polymer Science and Engineering, Chonnam National University, Gwangju 61186, Korea
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Department of Applied Physics, Hanyang University, Ansan-si 15588, Korea
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Department of Advanced Patterning, IMEC, 3001 Leuven, Belgium
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Department of Chemistry, KU Leuven, 3000 Leuven, Belgium
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Department of Chemistry, Inha University, Incheon 22212, Korea
*
Authors to whom correspondence should be addressed.
These authors contributed equally to this work (co-first author).
Polymers 2019, 11(12), 1923; https://doi.org/10.3390/polym11121923
Received: 2 October 2019 / Revised: 13 November 2019 / Accepted: 19 November 2019 / Published: 22 November 2019
(This article belongs to the Section Polymer Theory and Simulation)
Extreme ultraviolet lithography (EUVL) is a leading-edge technology for pattern miniaturization and the production of advanced electronic devices. One of the current critical challenges for further scaling down the technology is reducing the line-edge roughness (LER) of the final patterns while simultaneously maintaining high resolution and sensitivity. As the target sizes of features and LER become closer to the polymer size, polymer chain conformations and their distribution should be considered to understand the primary sources of LER. Here, we proposed a new approach of EUV photoresist modeling with an explicit description of polymer chains using a coarse-grained model. Our new simulation model demonstrated that interface variation represented by width and fluctuation at the edge of the pattern could be caused by characteristic changes of the resist material during the lithography processes. We determined the effect of polymer chain conformation on LER formation and how it finally contributed to LER formation with various resist material parameters (e.g., Flory–Huggins parameter, molecular weight, protected site ratio, and Tg). View Full-Text
Keywords: EUV photoresist; line-edge roughness; coarse-grained model; molecular simulation EUV photoresist; line-edge roughness; coarse-grained model; molecular simulation
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MDPI and ACS Style

Park, J.; Lee, S.-G.; Vesters, Y.; Severi, J.; Kim, M.; De Simone, D.; Oh, H.-K.; Hur, S.-M. Molecular Modeling of EUV Photoresist Revealing the Effect of Chain Conformation on Line-Edge Roughness Formation. Polymers 2019, 11, 1923.

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