We analyze a ballistic electron transport through a corrugated (rippled) graphene system with a curvature-induced spin–orbit interaction. The corrugated system is connected from both sides to two flat graphene sheets. The rippled structure unit...
The electronic transport behaviors of (Ni0.39Nb0.25Zr0.35)100−xHx (0 ≤ x < 23.5) glassy alloys with subnanostructural icosahedral Zr5Nb5Ni3 clusters have been studied as a function of hydrogen content. These alloys show semiconducting, electric curre...
This paper elaborates on the proposal of a new analytical model for a non-ballistic transport scenario for Schottky barrier carbon nanotube field effect transistors (SB-CNTFETs). The non-ballistic transport scenario depends on incorporating the effec...
Geometric diodes are planar conductors patterned asymmetrically to provide electrical asymmetry, and they have exhibited high-frequency rectification in infrared rectennas. These devices function by ballistic or quasi-ballistic transport in which the...
The current electronics industry has used the aggressive miniaturization of solid-state devices to meet future technological demands. The downscaling of characteristic device dimensions into the sub-10 nm regime causes them to fall below the electron...
The properties of the ballistic electron transport through a corrugated graphene system are analysed from the symmetry point of view. The corrugated system is modelled by a curved surface (an arc of a circle) connected from both sides to flat sheets....
The super-ballistic temperature dependence of thermal conductivity, facilitated by collective phonons, has been widely studied. It has been claimed to be unambiguous evidence for hydrodynamic phonon transport in solids. Alternatively, hydrodynamic th...
A surface-potential-based analytical large-signal model, which is applicable to both ballistic and quasi-ballistic transport in InGaAs high electron mobility transistors, is developed. Based on the one-flux method and a new transmission coefficient,...
Ever increasing demands of data traffic makes the transition to 6G communications in the 300 GHz band inevitable. Short-channel field-effect transistors (FETs) have demonstrated excellent potential for detection and generation of terahertz (THz) and...
Graphene Josephson Junctions (GJJ) in the regime of ballistic transport where current is carried by discrete energy states of Andreev-reflected coherent electron-hole pairs have been recently demonstrated in graphene heterostructures. Due to the non-...
We show that the axial symmetry of the Bychkov–Rashba interaction can be exploited to produce electron spin-flip in a circular quantum dot, without lifting the time reversal symmetry. In order to elucidate this effect, we consider ballistic ele...
Zigzag nanoribbons tailored from chemically surface-modified Sb or Bi monolayers by methyl, amino or hydroxyl are investigated through first-principles electronic-structure calculations to explore their potential applications in topological transport...
Hafnium disulfide (HfS2) monolayer is one of the most promising two-dimensional (2D) materials for future nanoscale electronic devices, and patterning it into quasi-one-dimensional HfS2 nanoribbons (HfS2NRs) enables multi-channel architectures for fi...
Highly doped graphene samples show reduced conductance and enhanced shot-noise power compared with standard ballistic systems in two-dimensional electron gas. These features can be understood within a model that assumes incoherent scattering of Dirac...
We study, using non-equilibrium Green’s function simulations combined with first-principles density functional theory, the edge-state transport in two-dimensional topological insulators. We explore the impact of electron–phonon coupling o...
It has recently been demonstrated how the nitrogen dopant concentration in graphene can be controlled spatially on the nano-meter scale using a molecular mask. This technique may be used to create ballistic electron optics-like structures of high/low...
As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D...
The encapsulation of single-layer 2D materials within hBN has been shown to improve the mobility of these compounds. Nevertheless, the interplay between the semiconductor channel and the surrounding dielectrics is not yet fully understood, especially...
We report the electronic, magnetic and transport properties of a prototypical antiferromagnetic (AFM) spintronic device. We chose Cr as the active layer because it is the only room-temperature AFM elemental metal. We sandwiched Cr between two non-mag...
Field electron emission vacuum photodiode is promising for converting free-space electromagnetic radiation into electronic signal within an ultrafast timescale due to the ballistic electron transport in its vacuum channel. However, the low photoelect...
We present a comprehensive first-principles study of nanoribbons made from the α-borophene sheet. This study looks at how edge shape, ribbon width, and magnetic ordering affect their structural, electronic, and transport properties. Ribbons cut...
As one of the most promising electronic devices in the post-Moore era, nanoscale vacuum field emission transistors (VFETs) have garnered significant attention due to their unique electron transport mechanism featuring ballistic transport within vacuu...
Tungsten films were prepared by DC magnetron sputtering using glancing angle deposition with a constant deposition angle α = 80°. A first series of films was obtained at a constant pressure of 4.0 × 10−3 mbar with the films&rsqu...
Due to its special electronic and ballistic transport properties, graphene has attracted much interest from researchers. In this study, platinum (Pt) nanoparticles were deposited on oxidized graphene sheets (cG). The graphene sheets were applied to o...
Solid-state photon-enhanced thermionic emission (PETE) solar energy converters are newly proposed devices that can directly convert solar energy into electrical power at high temperatures. An analytical model based on a one-dimensional steady-state e...
In this study, we demonstrate that the Sn2Se2P4 monolayer exhibits intrinsic anisotropic electronic characteristics with the strain-synergistic modulation of carrier transport and optoelectronic properties, as revealed by various levels of density fu...
The results of the research and design of a novel vacuum photosensor with a planar molybdenum blade structure are presented. The advanced prototype implements the principle of an increasing penetrability of the Schottky barrier for the metal–va...