This paper presents a 0–360° phase shifter in 28 nm FD-SOI CMOS technology, suitable for radar applications and mm-wave wireless communication systems, which adopt high-efficiency transmitter architectures. It exploits a novel switching vec...
This paper presents a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology. Electromagnetic (EM) simulations suggest that the LNA has a 3-dB bandwidth (BW) from...
This paper presents the design and implementation of a 28 GHz phased array transceiver for 5G applications using 22 nm FD-SOI CMOS technology. The transceiver consists of a four-channel phased array receiver and transmitter, which employs phase shift...
3 September 2020
Fully Depleted Silicon on Insulator (FD-SOI) CMOS technology offers the possibility of circuit performance optimization with reduction of both topology complexity and power consumption. These advantages are fully exploited in this paper in order to d...
This paper presents a 40 GHz voltage-controlled oscillator (VCO) and frequency divider chain fabricated in STMicroelectronics 28 nm ultrathin body and box (UTBB) fully depleted silicon-on-insulator (FD-SOI) complementary metal-oxide–semiconductor (CM...
A compact 8–15 GHz Doherty power amplifier (DPA) is proposed and fabricated in 22 nm FD-SOI CMOS. The proposed DPA relies on a quadrature-hybrid splitter and combiner to replace the bulky λ/4 impedance inverters at the input and the outp...
An ultrafast Active Quenching—Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology....
This work presents the design and simulation of a time-interleaved successive approximation register (SAR) analog-to-digital converter (ADC) implemented in GlobalFoundries’ 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS process. Motiva...
This paper presents a 77 GHz two path power amplifier (PA) for automotive radar applications. It was fabricated in 28-nm fully depleted silicon-on-insulator CMOS technology, which provides transistors with a transition frequency of about 270 GHz and...
This work presents a fully integrated, two-stage, deep class-AB power amplifier (PA) operating at a center frequency of 60 GHz. High efficiency and suppression of third-order intermodulation products are targeted, achieving improved linearity compare...
This paper presents a switched capacitor low-pass filter in a 28-nm fully depleted silicon on insulator CMOS technology for 77-GHz automotive radar applications. It is operated at a power supply as low as 1 V and guarantees 5-dB in-band voltage gain...
Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of 24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are presented in this work. First, a single-ended broadband PA that empl...
Low-phase noise and wideband phased-locked loops (PLLs) are crucial for high-data rate communication and imaging systems. Sub-millimeter-wave (sub-mm-wave) PLLs typically exhibit poor performance in terms of noise and bandwidth due to higher device p...
Negative feedback applied to the back gate of MOS devices available in FD-SOI (fully depleted silicon on insulator) CMOS technologies can be used to improve the linearity of operational amplifiers. Two operational amplifiers designed and fabricated i...
In this article, we develop a simple and accurate model for evaluating the propagation delay in MOS Current-Mode Logic (MCML) gates. The model describes the behavior of MCML gates in a linear fashion despite the circuits themselves being non-linear....
This paper presents a flash frequency tuning technique for switched-capacitor-based, voltage-controlled oscillators operating at mm wave frequencies. The proposed strategy exploits a capacitor array and a small varactor for coarse and fine tuning, re...
The transconductance-to-drain-current method is a transistor sizing methodology that is commonly used in CMOS technology. In this study, we explored by means of simulations, a case of study and three figures of merit used for the method, and we concl...
In this paper, a Micro-Electro-Mechanical Systems (MEMS) calorimetric sensor with its measurement electronics is designed, fabricated, and tested. The idea is to apply a configurable voltage to the sensitive resistor and measure the current flowing t...
Polar codes are the first family of error-correcting codes that can achieve channel capacity. Among the known decoding algorithms, Successive-Cancellation List (SCL) decoding supported by a Cyclic Redundancy Check (CRC) shows the best error-correctio...
Millimeter-wave (mm-Wave) phased array systems need to meet the transmitter (Tx) equivalent isotropic radiated power (EIRP) requirement, and that depends mainly on the design of two key sub-components: (1) the antenna array and (2) the Tx power ampli...
Implantable microelectrodes arrays are used to record electrical signals from surrounding neurons and have led to incredible improvements in modern neuroscience research. Digital signals resulting from conditioning and the analog-to-digital conversio...
Microfabricated semiconductor devices are becoming increasingly relevant for detection of biological and chemical components. The integration of active biological materials together with sensitive transducers offers the possibility of generating high...
The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on–off function of devices. At present, most of the irradiation research on the...
In the published publication [...]
We present a low voltage, low power operational transconductance amplifier (OTA) designed using a Fully Depleted Silicon-on-Insulator (FDSOI) process. For very low voltage application down to 0.5 V, two-stage miller-compensated OTAs with both p-chann...
Minimum energy per operation is typically achieved in the subthreshold region where low speed and low robustness are two challenging problems. This paper studies the impact of back biasing (BB) schemes on these features for 28 nm FDSOI technology at...
Although Moore’s Law reaches its limits, it has never applied to analog and RF circuits. For example, due to the short channel effect (SCE), drain-induced barrier lowering (DIBL), and sub-threshold slope (SS)…, longer transistors are req...
After more than five decades, Moore’s Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly u...
Low-pass filters with bandwidths larger than several GHz are required in many applications, such as anti-aliasing filters in high-speed ADCs and pulse-shaping filters in high-speed DACs. In highly integrated applications, low area occupation and powe...
This paper presents a 160 GHz, D-band, low-noise amplifier (LNA) and a D-band power amplifier (PA) implemented in the Global Foundries 22 nm CMOS FDSOI. The two designs are used for the contactless monitoring of vital signs in the D-band. The LNA is...
This work is focused on the performance of three different standard-cell-based comparator topologies, considering ultra-low-voltage (ULV) operation. The main application scenarios in which standard-cell-based comparators can be exploited are consider...
Magnetic tunnel junction (MTJ) with a voltage-controlled magnetic anisotropy (VCMA) effect has been introduced to achieve robust non-volatile writing control with an electric field or a switching voltage. However, continuous technology scaling down m...
Two frequency divider architectures in the Folded MOS Current Mode Logic which allow to operate at ultra-low voltage thanks to forward body bias are presented, analyzed, and compared. The first considered architecture exploits nType and pType divide-...
In this work, a layout-level design methodology is presented for Low-Noise Amplifiers (LNAs), targeting a wide frequency spectrum from RF to millimeter-wave (mmWave) bands, and implemented using a 22 nmFDSOI CMOS process. A nested inductor structure...
This work presents a current-controlled CMOS ring oscillator (CCRO) optimized for ultra-low-voltage applications in next-generation energy-constrained systems. Leveraging bulk voltage tuning in 22 nm FDSOI differential inverter stages, the topology e...