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Article

An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique

1
ICube Research Institute, University of Strasbourg and CNRS, 23 Rue du Loess, CEDEX, 67037 Strasbourg, France
2
Univ Lyon, INSA Lyon, CNRS, INL, UMR5270, 69100 Villeurbanne, France
3
STMicroelectronics, 38920 Crolles, France
*
Author to whom correspondence should be addressed.
Academic Editors: Lucio Pancheri and Matteo Perenzoni
Sensors 2021, 21(12), 4014; https://doi.org/10.3390/s21124014
Received: 6 May 2021 / Revised: 5 June 2021 / Accepted: 6 June 2021 / Published: 10 June 2021
(This article belongs to the Special Issue SPAD Image Sensors)
An ultrafast Active Quenching—Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology. By exploiting the body biasing technique, the avalanche is detected very quickly and, consequently, is quenched very fast. The fast quenching decreases the avalanche charges, therefore resulting in the afterpulsing reduction. Both post-layout and experimental results are presented and are highly in accordance with each other. It is shown that the proposed AQAR circuit is able to detect the avalanche in less than 40 ps and reduce the avalanche charge and the afterpulsing up to 50%. View Full-Text
Keywords: afterpulsing; avalanche charge; active quenching; avalanche detection; inverter; body biasing; Fully Depleted Silicon On Insulator (FD-SOI); Single Photon Avalanche Diode (SPAD) afterpulsing; avalanche charge; active quenching; avalanche detection; inverter; body biasing; Fully Depleted Silicon On Insulator (FD-SOI); Single Photon Avalanche Diode (SPAD)
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MDPI and ACS Style

Dolatpoor Lakeh, M.; Kammerer, J.-B.; Aguénounon, E.; Issartel, D.; Schell, J.-B.; Rink, S.; Cathelin, A.; Calmon, F.; Uhring, W. An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique. Sensors 2021, 21, 4014. https://doi.org/10.3390/s21124014

AMA Style

Dolatpoor Lakeh M, Kammerer J-B, Aguénounon E, Issartel D, Schell J-B, Rink S, Cathelin A, Calmon F, Uhring W. An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique. Sensors. 2021; 21(12):4014. https://doi.org/10.3390/s21124014

Chicago/Turabian Style

Dolatpoor Lakeh, Mohammadreza; Kammerer, Jean-Baptiste; Aguénounon, Enagnon; Issartel, Dylan; Schell, Jean-Baptiste; Rink, Sven; Cathelin, Andreia; Calmon, Francis; Uhring, Wilfried. 2021. "An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique" Sensors 21, no. 12: 4014. https://doi.org/10.3390/s21124014

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