The vertical-cavity surface-emitting laser (VCSEL) has unique advantages over the conventional edge-emitting laser and has recently attracted a lot of attention. However, the output power of GaN-based VCSEL is still low due to the large electron leak...
The effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated. The carrier injection and internal quantum efficiency of the LEDs were s...
We investigated the temperature dependence of the electron leakage current in the AlGaN electron-blocking layer (EBL) of an InGaN/GaN blue light-emitting diode (LED) structure at temperatures between 20 and 100 °C. The percentage of electron leak...
In this work, we demonstrate high-efficiency 385 nm AlGaN-based near-ultraviolet micro light emitting diode (NUV-Micro LED) arrays. The epi structure is prepared using a novel AlN-inserted superlattice electrical blocking layer which enhances hole sp...
In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free layer AlGaN ultra-violet (UV) light-emitting diode (LED) using polarization-engineered heart-sh...
The leakage of the electronic current of a laser diode (LD) has some significant influences on the performance of the LD. In this study, commercial simulation software LASTIP is used to numerically evaluate the performances of LDs by using different...
The influence of quantum-well (QW) number on electroluminescence properties was investigated and compared with that of AlN electron blocking layer (EBL) for deep ultraviolet light-emitting diodes (DUV-LEDs). By increasing the QW number, the band emis...
An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect t...
Serious electron leakage and poor hole injection efficiency are still challenges for deep ultraviolet AlGaN-based light-emitting diodes with a traditional structure in achieving high performance. Currently, the majority of research works concentrate...
In this study, systematic structural design was investigated numerically to probe into the cross-relating influences of n-AlGaN layer, quantum barrier (QB), and electron-blocking layer (EBL) on the output performance of AlGaN deep-ultraviolet (DUV) l...
In this study, we propose a polarized electron blocking layer (EBL) structure using AlxGa1−xN/AlxGa1−xN to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet light-emitting diodes (UV LEDs). Our findings indicate tha...
Quantum dots (QDs) are promising candidates for producing bright, color-pure, cost-efficient, and long-lasting QD-based light-emitting diodes (QDLEDs). However, one of the significant problems in achieving high efficiency of QDLEDs is the imbalance b...
To prevent electron leakage in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs), Al-rich p-type AlxGa(1−x)N electron blocking layer (EBL) has been utilized. However, the conventional EBL can mitigate the electron overflow only up to some exte...
This study presents a novel approach to mitigate electron overflow in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs) by integrating engineered quantum barriers (QBs) with a concave shape and an optimized AlGaN superlattice (SL) electron blo...
In GaN-based laser diode (LD) structures, Mg doping in p-type-doped layers has a significant influence on the device performance. As the doping concentration increases, the operation voltage decreases, whereas the output power decreases as a result o...
The main efficiency loss is caused by an intensive recombination process at the interface of fluorine-doped tin oxide (FTO) and electrolyte in dye-sensitized solar cells. Electrons from the photoanode can be injected back to the redox electrolyte and...
Vertical-cavity surface emitting lasers in UVA band (UVA VCSELs) operating at a central wavelength of 395 nm are designed by employing PICS3D(2021) software. The simulation results indicate that the thickness of the InGaN quantum well and GaN barrier...
Polymer light-emitting diodes (PLEDs) hold immense promise for energy-efficient lighting and full-color display technologies. In particular, blue PLEDs play a pivotal role in achieving color balance and reducing energy consumption. The optimization o...
Junction temperature (Tj) and current have important effects on light-emitting diode (LED) properties. Therefore, the electroluminescence (EL) spectra of blue and green LEDs were investigated in a Tj range of 120–373 K and in a current range of...