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Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes

1
School of Electronics and Information, Nantong University, 9 Seyuan Road, Nantong 226019, China
2
Department of Physics, College of Science, Beijing University of Chemical Technology, 15 East Road, Beisanhuan, Beijing 100029, China
3
Suzhou Institute of Nano-tech and Nano-bionics, CAS, 398 Ruoshui Road, SEID, SIP, Suzhou 215123, China
4
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
*
Authors to whom correspondence should be addressed.
Appl. Sci. 2018, 8(12), 2402; https://doi.org/10.3390/app8122402
Received: 7 October 2018 / Revised: 22 November 2018 / Accepted: 23 November 2018 / Published: 26 November 2018
(This article belongs to the Special Issue Internal Quantum Efficiency of III-Nitride Light-Emitting Diodes)
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Abstract

The influence of quantum-well (QW) number on electroluminescence properties was investigated and compared with that of AlN electron blocking layer (EBL) for deep ultraviolet light-emitting diodes (DUV-LEDs). By increasing the QW number, the band emission around 265 nm increased and the parasitic peak around 304 nm was suppressed. From the theoretical calculation, the electron current overflowing to the p-type layer was decreased as the QW number increased under the same injection. Correspondingly, the light output power also increased. The increment of output power from 5 QWs to 10 QWs was less than that from 10 QWs to 40 QWs, which was very different from what has been reported for blue and near-UV LEDs. The parasitic peak was still observed even when the QW number increased to 40. However, it can be suppressed efficiently by 1 nm AlN EBL for LEDs with 5 QWs. The simulation showed that the insertion of a thin EBL increased the barrier height for electron overflow and the electron current in p-type layers decreased significantly. The results contributed to the understanding of behavior of electron overflow in DUV-LEDs. View Full-Text
Keywords: deep ultraviolet light-emitting diodes; AlGaN; electroluminescence; electron overflow; electron blocking layer deep ultraviolet light-emitting diodes; AlGaN; electroluminescence; electron overflow; electron blocking layer
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Tan, S.; Zhang, J.; Egawa, T.; Chen, G. Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes. Appl. Sci. 2018, 8, 2402.

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