Band-Engineered Structural Design of High-Performance Deep-Ultraviolet Light-Emitting Diodes
1
Center for Teacher Education, National Changhua University of Education, Changhua 500, Taiwan
2
Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan
3
Mechanical and Mechatronics Systems Research Laboratory, Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan
4
Department of Physics, National Changhua University of Education, Changhua 500, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Julien Brault
Crystals 2021, 11(3), 271; https://doi.org/10.3390/cryst11030271
Received: 27 January 2021 / Revised: 28 February 2021 / Accepted: 7 March 2021 / Published: 10 March 2021
(This article belongs to the Special Issue Nitride Compound Light Emitting Diodes)
In this study, systematic structural design was investigated numerically to probe into the cross-relating influences of n-AlGaN layer, quantum barrier (QB), and electron-blocking layer (EBL) on the output performance of AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) with various Al compositions in quantum wells. Simulation results show that high-Al-composition QB and high-Al-composition EBL utilized separately are beneficial for the enhancement of carrier confinement, while the wall-plug efficiency (WPE) degrades dramatically if both high-Al-composition QB and EBL are existing in a DUV LED structure simultaneously. DUV LEDs may be of great optical performance with appropriate structural design by fine-tuning the material parameters in n-AlGaN layer, QB, and EBL. The design curves provided in this paper can be very useful for the researchers in developing the DUV LEDs with a peak emission wavelength ranging from 255 nm to 285 nm.
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Keywords:
AlGaN; carrier confinement; polarization effect; light-emitting diodes
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MDPI and ACS Style
Chang, J.-Y.; Huang, M.-F.; Huang, C.-Y.; Lin, S.-C.; Wang, C.-C.; Kuo, Y.-K. Band-Engineered Structural Design of High-Performance Deep-Ultraviolet Light-Emitting Diodes. Crystals 2021, 11, 271. https://doi.org/10.3390/cryst11030271
AMA Style
Chang J-Y, Huang M-F, Huang C-Y, Lin S-C, Wang C-C, Kuo Y-K. Band-Engineered Structural Design of High-Performance Deep-Ultraviolet Light-Emitting Diodes. Crystals. 2021; 11(3):271. https://doi.org/10.3390/cryst11030271
Chicago/Turabian StyleChang, Jih-Yuan; Huang, Man-Fang; Huang, Chih-Yung; Lin, Shih-Chin; Wang, Ching-Chiun; Kuo, Yen-Kuang. 2021. "Band-Engineered Structural Design of High-Performance Deep-Ultraviolet Light-Emitting Diodes" Crystals 11, no. 3: 271. https://doi.org/10.3390/cryst11030271
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