The primary objective of this research paper is to explore strategies for enhancing the electrical performance of dual active layer thin film transistors (TFTs) utilizing LZTO/ZTO as the bilayer architecture. By systematically adjusting the thickness...
Indium-based oxide semiconductors have been commercialized because of their excellent electrical properties, but the high cost, limited availability, and environmental toxicity of indium necessitate the development of alternative materials. Among the...
This work explores the effect of a Zn1−xSnxOy (ZTO) layer as a potential replacement for CdS in Sb2(S,Se)3 devices. Through the use of Afors-het software v2.5, it was determined that the ZTO/Sb2(S,Se)3 interface exhibits a lower conduction band...
Cu2ZnSnS4 (CZTS) is a promising absorber material to produce thin film solar cells thanks to its high absorption coefficient, low cost and low toxicity. CdS is commonly used as a buffer layer for CZTS solar cells but, beyond its toxicity, it has a no...
CdSe/ZnS quantum dots (QDs) have attracted great consideration from investigators owing to their excellent photo-physical characteristics and application in quantum dot light-emitting diodes (QD-LEDs). The CdSe/ZnS-based inverted QD-LEDs structure us...
Zinc–tin oxide (ZTO) thin films (ZnO)x(SnO2)1−x with different material composition x (0 < x < 1) are deposited by spin coating on glass substrates at room temperature. The Differential Scanning Calorimetry (DSC) data of the precurs...
A stacked nanocomposite zinc-tin oxide/single-walled carbon nanotubes (ZTO/SWNTs) active layer was fabricated for thin-film transistors (TFTs) as an alternative to the conventional single-layer structure of mixed ZTO and SWNTs. The stacked nanocompos...
Solution-processed oxide thin-film transistors (TFTs) can lead to a significant cost-effective process and suitable for large-scale fabrication. However, they often face limitations, such as lower field-effect mobility, the use of indium which is tox...
To enhance the electrical performance of MgZnO-TFTs, this study employed radio-frequency (RF) magnetron sputtering to fabricate MgZnO/ZTO thin films. Using these films as the channel layer, bottom-gate top-contact MgZnO/ZTO-TFT devices were construct...
The solution-processed deposition of metal-oxide semiconducting materials enables the fabrication of large-area and low-cost electronic devices by using printing technologies. Additionally, the simple patterning process of these types of materials be...
Atomic layer deposition (ALD) is a useful tool for producing ultrathin films and coatings of complex composition with high thickness control for a wide range of applications. In this study, the growth of zinc–titanium oxide nanofilms was invest...
The electrical, stability and optoelectronic properties of GZTO TFTs with different Ga doping concentrations were investigated. Active layers were prepared by co-sputtering GaO and ZTO targets with different sputtering powers. The experimental result...
Flexible transparent conducting coatings have been adopted in many novel optoelectrical devices for energy-related applications. Laminated coatings composed of oxide/metal/oxide (abbreviated as OMO) layers are promising alternative materials to indiu...
Flexible transparent conductors (FTCs) are key materials that determine the scalability and performance of flexible optoelectronic devices. This study explores the reliability of FTCs with laminated multilayer structures, specifically oxide/metal/oxi...
Research into methods for regulating the biocorrosion rate of biodegradable magnesium implants is one of the most urgent tasks in the field of biomedical materials science. Atomic layer deposition (ALD) is a highly effective method for the preparatio...
The zinc-tin-oxide (ZTO) thin-film transistor (TFT) is one of the most promising candidates for advanced display applications, though its popularity is limited by its performances. In this work, a heterojunction channel strategy was adopted to regula...