33 Results Found

The results of colossal magnetoresistance (CMR) properties of La_1-xSr_xMn_yO₃ (LSMO) films grown by the pulsed injection MOCVD technique onto an Al₂O₃ substrate are presented. The grown films with different Sr (0.05 ≤ x ≤ 0.3) and Mn excess (y &g...

A measurement system based on the colossal magnetoresistance CMR-B-scalar sensor was developed for the measurement of short-duration high-amplitude magnetic fields. The system consists of a magnetic field sensor made from thin nanostructured manganit...

The results of magnetoresistance (MR) and resistance relaxation of nanostructured La_1−xSr_xMn_yO₃ (LSMO) films with different film thicknesses (60–480 nm) grown on Si/SiO₂ substrate by the pulsed-injection MOCVD technique are presented and...

The results of colossal magnetoresistance (CMR) properties of La_0.83Sr_0.17Mn_1.21O₃ (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single cry...

Metal–organic chemical vapor deposition (MOCVD) is a crystal growth technique used to achieve high-purity thin films, especially III–V materials, for fabricating semiconductor devices. It allows for thickness tunability, controlled doping...

Today, many technologies for the deposition of various functional coatings using volatile compounds are united under the general name chemical vapor deposition processes from the gas phase (CDV, MOCVD, ALD, CVI, PECVD, etc [...]

This paper reviews some of the basic issues in homoepitaxial growth of III-nitrides to enable a vertical device technology. It focuses on the use of metal organic chemical vapor deposition (MOCVD) to grow GaN and explores the effects of the native su...

Scandium complexes with β-diketonate ligands are valuable precursors for the metal–organic chemical vapor deposition (MOCVD) of scandia based materials, but data on their volatilization thermodynamics crucial to MOCVD technology are in a h...

The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates. Although various additional treatmen...

The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes were of micro-striped type de...

With the development of energy efficiency technologies such as 5G communication and electric vehicles, Si-based GaN microelectronics has entered a stage of rapid industrialization. As a new generation of microwave and millimeter wave devices, High El...

Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<1...

In this work, we propose a new approach to create striped patterned sapphire substrate (PSS) under the circumstance that grooved patterned sapphire substrate technology exhibits more potential to reduce dislocation density in GaN (gallium nitride) ep...

The development of electrically pumped semiconductor diode lasers emitting at the ultraviolet (UV)-B and -C spectral bands has been an active area of research over the past several years, motivated by a wide range of emerging applications. III-Nitrid...

In the present energetic scenario, the development of materials with high potentiality in the technological fields of energy conversion processes, production and storage of hydrogen, are of great interest in the scientific community. In particular, w...

The monoclinic structures of vanadium dioxide are widely studied as appealing systems due to a plethora of functional properties in several technological fields. In particular, the possibility to obtain the VO₂ material in the form of thin film with...

This paper presents the current status of medium-wave infrared (MWIR) detectors at the Military University of Technology’s Institute of Applied Physics and VIGO System S.A. The metal–organic chemical vapor deposition (MOCVD) technique is a very conve...

Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electroni...

Using the technology of metalorganic chemical vapor deposition (MOCVD), fully fiber refractometers based on the lossy mode resonance (LMR) were obtained and investigated. The sensors are made on the basis of a section of optical fiber etched to the c...

In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, large...

Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2” GaN substrates through our proprietary Near Equilibri...

Mono- and few-layer hexagonal AlN (h-AlN) has emerged as an alternative “beyond graphene” and “beyond h-BN” 2D material, especially in the context of its verification in ultra-high vacuum Scanning Tunneling Microscopy and Mole...

Copper oxide thin films have been successfully synthesized through a metal–organic chemical vapor deposition (MOCVD) approach starting from the copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate), Cu(tmhd)₂, complex. Operative conditions of fabr...

Extensive research into two-dimensional transition metal dichalcogenides (2D-TMDCs) over the past decade has paved the way for the development of (opto)electronic devices with enhanced performance and novel capabilities. To realize devices based on 2...

The growth interruption technology is introduced to the growth of GaAsP/InAlGaAs quantum well (QW) structure using metal–organic chemical vapor deposition (MOCVD). The effect of growth interruption time (GIT) on the crystalline quality and opti...

In this paper, we report the growth of high-quality ${\mathrm{In}}_{0.59}{\mathrm{Ga}}_{0.41}\mathrm{As}/{\mathrm{In}}_{0.37}{\mathrm{Al}}_{0.63}\mathrm{As}$ strain-balanced quantum cascade lasers (QCLs) in the low-pressure MOCVD production type multi-wafer planetary reactor addressing, in particular, quality and scaled manu...

This paper investigates the mechanical properties and creep behavior of undoped and Mg-doped GaN thin films grown on sapphire substrates using metal–organic chemical vapor deposition (MOCVD) with trimethylgallium (TMG) and bis(cyclopentadienyl)...

Titanium nitride (TiN) not only was utilized in the wear-resistant coatings industry but it was also adopted in barrier processes for semiconductor manufacturing. Barrier processes include the titanium (Ti) and TiN processes, which are commonly used...

III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semicondu...

High-temperature annealing has been regarded as an effective technology to improve the performance of Ga₂O₃-based solar-blind photodetectors (SBPDs). However, as a metastable phase, ε-Ga₂O₃ thin film may undergo phase transformation during po...

At the time when many nonlinear optical (NLO) materials for frequency conversion of laser sources in the mid and long-wave infrared have achieved their fundamental or technological limits, we propose heteroepitaxy as a solution to develop novel NLO m...

The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently. That is directly related to the attempts to reduce th...

Micro-size light-emitting diodes (μLEDs) are high-brightness, low-power optoelectronic devices with significant potential in display technology, lighting, and biomedical applications. AlGaInP-based red LEDs experience severe size-dependent effects...