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Open AccessArticle

TiCl4 Barrier Process Engineering in Semiconductor Manufacturing

Macronix International Co. Ltd., Technology Development Center, No. 16, Li-Hsin Road, Science Park, Hsinchu 30078, Taiwan
Author to whom correspondence should be addressed.
Academic Editor: Alessandro Lavacchi
Coatings 2016, 6(1), 2;
Received: 3 August 2015 / Revised: 25 December 2015 / Accepted: 7 January 2016 / Published: 12 January 2016
(This article belongs to the Special Issue Trends in Coatings and Surface Technology—Feature Papers)
PDF [3836 KB, uploaded 12 January 2016]


Titanium nitride (TiN) not only was utilized in the wear-resistant coatings industry but it was also adopted in barrier processes for semiconductor manufacturing. Barrier processes include the titanium (Ti) and TiN processes, which are commonly used as diffusion barriers in via/contact applications. However, engineers frequently struggle at the via/contact module in the beginning of every technology node. As devices shrink, barrier processes become more challenging to overcome the both the physical fill-in and electrical performance requirements of advanced small via/contact plugs. The aim of this paper is to investigate various chemical vapor deposition (CVD) TiCl4-based barrier processes to serve the application of advanced small via/contact plugs and the metal gate processes. The results demonstrate that the plasma-enhanced chemical vapor deposition (PECVD) TiCl4-based Ti process needs to select a feasible process temperature to avoid Si surface corrosion by high-temperature chloride flow. Conventional high step coverage (HSC) CVD TiCl4-based TiN processes give much better impurity performance than metal organic chemical vapor deposition (MOCVD) TiN. However, the higher chloride content in HSC film may degrade the long-term reliability of the device. Furthermore, it is evidenced that a sequential flow deposition (SFD) CVD TiCl4-based process with multiple cycles can give much less chloride content, resulting in faster erase speeds and lower erase levels than that of conventional HSC TiN. View Full-Text
Keywords: MOCVD; TiCl4; barrier; contact; metal gate MOCVD; TiCl4; barrier; contact; metal gate

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Luoh, T.; Huang, Y.-K.; Hung, Y.-T.; Yang, L.-W.; Yang, T.-H.; Chen, K.-C. TiCl4 Barrier Process Engineering in Semiconductor Manufacturing. Coatings 2016, 6, 2.

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