Next Article in Journal
The Utilization of Recycled Masonry Aggregate and Recycled EPS for Concrete Blocks for Mortarless Masonry
Next Article in Special Issue
A (Permalloy + NiZn Ferrite) Moldable Magnetic Composite for Heterogeneous Integration of Power Electronics
Previous Article in Journal
Drug Release Kinetics of Electrospun PHB Meshes
Previous Article in Special Issue
Tailoring a Silver Paste for Additive Manufacturing of Co-Fired Ferrite Magnetic Components
Open AccessFeature PaperArticle

Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production

1
SixPoint Materials, Inc., Buellton, CA 93427, USA
2
Georgia Institute of Technology, Atlanta, GA 30332, USA
*
Author to whom correspondence should be addressed.
Materials 2019, 12(12), 1925; https://doi.org/10.3390/ma12121925
Received: 16 May 2019 / Revised: 7 June 2019 / Accepted: 12 June 2019 / Published: 14 June 2019
(This article belongs to the Special Issue Advanced Materials for Power Electronics)
Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2” GaN substrates through our proprietary Near Equilibrium AmmonoThermal (NEAT) growth technology. In a single 90 day growth, eleven c-plane GaN boules were grown from free-standing hydride vapor phase epitaxy (HVPE) GaN substrates. The boules had an average X-ray rocking curve full width at half maximum (FWHM) of 33 ± 4 in the 002 reflection and 44 ± 6 in the 201 reflection using 0.3 mm divergence slits. The boules had an average radius of curvature of 10.16 ± 3.63 m. The quality of the boules was highly correlated to the quality of the seeds. A PIN diode grown at Georgia Tech on a NEAT GaN substrate had an ideality factor of 2.08, a high breakdown voltage of 1430 V, and Baliga’s Figure of Merit of >9.2 GW/cm2. These initial results demonstrate the suitability of using NEAT GaN substrates for high-quality MOCVD growth and fabrication of high-power vertical GaN switching devices. View Full-Text
Keywords: GaN; ammonothermal; bulk; substrates; NEAT; power devices GaN; ammonothermal; bulk; substrates; NEAT; power devices
Show Figures

Figure 1

MDPI and ACS Style

Key, D.; Letts, E.; Tsou, C.-W.; Ji, M.-H.; Bakhtiary-Noodeh, M.; Detchprohm, T.; Shen, S.-C.; Dupuis, R.; Hashimoto, T. Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production. Materials 2019, 12, 1925.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop