Recent Advances in Field-Effect Transistors: Materials, Devices, and Emerging Applications
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: 31 December 2025 | Viewed by 41
Special Issue Editor
2. Faculty of Integrated Circuits, Xidian University, Xi’an 710071, China
Interests: field-effect transistor; high mobility device; reliability research; memory device; artificial intelligence application
Special Issue Information
Dear Colleagues,
We are pleased to invite you to contribute to this Special Issue titled “Recent Advances in Field-Effect Transistors: Materials, Devices, and Emerging Applications”. Field-effect transistors are the fundamental building blocks of modern electronic systems, from logic circuits and memory arrays to emerging neuromorphic and quantum devices. With the continued scaling of CMOS technology approaching its physical and economic limits, a wide range of innovations—spanning new materials, device architectures, and operation paradigms—are being actively pursued. These developments aim to overcome current challenges in power consumption, performance, integration, and functionality.
This Special Issue aims to bring together recent breakthroughs and state-of-the-art developments in the field of FETs, broadly covering both conventional CMOS logic transistors and emerging devices. Contributions that explore new channel materials (e.g., 2D semiconductors, III-Vs, and Ge), gate stack engineering, ferroelectric and negative-capacitance FETs, steep-slope transistors, and advanced integration schemes (e.g., 3D stacking, CFETs, and BEOL-compatible logic) are especially welcome. This Special Issue also seeks to highlight advances in modeling, reliability, variability analysis, and applications in AI, RF, and sensing.
This Special Issue aligns with the journal’s scope by focusing on foundational and applied research in semiconductor device physics, fabrication, modeling, and novel architectures.
In this Special Issue, original research articles and comprehensive review papers are welcome. Research areas may include (but are not limited to) the following:
- Gate-all-around (GAA) and nanosheet FETs for sub-3 nm nodes;
- High-mobility channel materials (e.g., Ge, SiGe, III-V, and 2D TMDs);
- Ferroelectric and negative capacitance FETs for low-power logic;
- Tunnel FETs and steep-slope transistors;
- Advanced gate stack and contact engineering;
- BEOL-compatible and 3D-integrated logic FETs;
- Variability, reliability, and aging in advanced FETs;
- Compact modeling and TCAD simulation for emerging transistors;
- FET applications in neuromorphic, RF, flexible, and sensing platforms.
We look forward to receiving your contributions and to advancing the frontier of field-effect transistor technology together.
Prof. Dr. Xiao Yu
Guest Editor
Manuscript Submission Information
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Keywords
- field-effect transistors
- CMOS scaling
- novel channel materials
- ferroelectric FETs
- steep-slope devices
- nanosheet FETs
- device modeling
- gate stack engineering
- 2D materials
- emerging logic devices
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