Study of 3C-SiC Power MOSFETs

This work presents the simulation and design of 3C-SiC power MOSFETs, focusing on critical parameters including avalanche impact ionization, breakdown voltage, bulk and channel mobilities, and the trade-off between on-resistance and breakdown voltage. The device design is carried out by evaluating the blocking voltage of scaled structures as a function of the blocking layer’s doping concentration. To mitigate edge-effect breakdown at the p-well/n-drift interface, a step-profile doping strategy is employed. Multiple transistor layouts with varying pitches are developed using a commercially available device simulator. Results are benchmarked against a one-dimensional analytical model, validating the on-state resistance, current–voltage behavior, and overall accuracy of the simulation approach. For the selected material properties, simulations predict that a 600 V 3C-SiC MOSFET achieves an on-state resistance of 0.8 mΩ·cm², corresponding to a 7 μm drift layer with a doping concentration of 1 × 10¹⁶ cm⁻³.